2SC3425
TOSHIBA Transistor
Silicon NPN Triple Diffused Type (PCT Process)
2SC3425
Switching Regulator and High-Voltage Switching
Applications
High-Speed DC-DC Converter Applications
Industrial Applications
Unit: mm
•
•
Excellent switching times: t
r
= 1.0
μs
(max)
t
f
= 1.5
μs
(max), (I
C
= 0.5 A)
High breakdown voltage: V
CEO
= 400 V
Absolute Maximum Ratings
(Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
500
400
7
0.8
1.5
0.5
1.2
10
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-8H1A
Weight: 0.82 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
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2006-11-09
2SC3425
Electrical Characteristics
(Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Rise time
Symbol
I
CBO
I
EBO
V
(BR) CBO
V
(BR) CEO
h
FE
V
CE (sat)
V
BE (sat)
t
r
Test Condition
V
CB
= 400 V, I
E
= 0
V
EB
= 7 V, I
C
= 0
I
C
= 1 mA, I
E
= 0
I
C
= 10 mA, I
B
= 0
V
CE
= 5 V, I
C
= 0.1 A
V
CE
= 5 V, I
C
= 0.5 A
I
C
= 0.1 A, I
B
= 0.01 A
I
C
= 0.1 A, I
B
= 0.01 A
Output
400
Ω
Min
―
―
500
400
20
10
―
―
―
Typ.
―
―
―
―
―
―
―
―
―
Max
100
100
―
―
100
―
0.5
1.0
1.0
V
V
Unit
μA
μA
V
V
20
μs
I
B1
Input
I
B2
I
B1
I
B2
Switching time
Storage time
t
stg
―
―
2.5
μs
V
CC
≈
200 V
Fall time
t
f
I
B1
=
−I
B2
= 0.05 A, duty cycle
≤
1%
―
―
1.5
Marking
Lot No.
C3425
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
2
2006-11-09
2SC3425
I
C
– V
CE
1000
Common emitter
Tc = 25°C
800
80
60
100
300
h
FE
– I
C
Tc = 100°C
25
−40
(mA)
DC current gain h
FE
40
600
30
20
400
10
5
200
IB = 2 mA
50
30
Collector current I
C
10
5
3
Common emitter
VCE = 5 V
0
0
0
2
4
6
8
10
12
1
1
3
10
30
100
300
1000
Collector current I
C
(mA)
Collector-emitter voltage
V
CE
(V)
V
CE (sat)
– I
C
10
Common emitter
10
5
3
IC/IB = 10
5
3
IC/IB = 5
V
CE (sat)
– I
C
Common emitter
Collector-emitter saturation voltage
V
CE (sat)
(V)
1
0.5
0.3
Collector-emitter saturation voltage
V
CE (sat)
(V)
1
0.5
0.3
0.1
0.05
0.02
1
Tc = 100°C
−40
25
0.1
0.05
0.02
1
Tc = 100°C
−40
30
100
300
1000
25
3
10
3
10
30
100
300
1000
Collector current I
C
(mA)
Collector current I
C
(mA)
V
BE (sat)
– I
C
10
10
Common emitter
5
3
IC/IB = 10
V
BE (sat)
– I
C
Base-emitter saturation voltage
V
BE (sat)
(V)
Common emitter
5
3
IC/IB = 5
Base-emitter saturation voltage
V
BE (sat)
(V)
1
0.5
0.3
Tc =
−40°C
1
0.5
0.3
Tc =
−40°C
25
100
25
100
0.1
1
3
10
30
100
300
1000
0.1
1
3
10
30
100
300
1000
Collector current I
C
(mA)
Collector current I
C
(mA)
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2006-11-09
2SC3425
I
C
– V
BE
1
Common emitter
VCE = 5 V
10
−1
I
C
– V
BE
1000
Common emitter
VCE = 5 V
800
Collector current I
C
Collector current I
C
(mA)
Tc = 100°C
25
−40
(A)
600
10
−2
400
Tc = 100°C
200
25
−40
10
−3
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-emitter voltage
V
BE
(V)
Base-emitter voltage
V
BE
(V)
Switching Characteristics
100
50
30
IC/IB = 10
IB1 =
−I
B2
Pulse width = 20
μs
Duty cycle
≤
1%
tstg
Tc = 25°C
Switching time (μs)
10
5
3
tf
1
0.5
0.3
tr
0.1
0
0.1
0.2
0.3
0.4
0.5
Collector current I
C
(A)
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2SC3425
r
th
– t
w
300
Transient thermal resistance r
th
(°C/W)
Curves should be applied in thermal limited area.
100
(single nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
30
(1)
10
(2)
3
1
0.3
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
w
(s)
Safe Operating Area
3
IC max (pulsed)*
10
μs*
1 IC max (continuous)
100
μs*
1 ms*
DC operation
Tc = 25°C
10 ms*
0.1
0.05
0.03
*:
Single nonrepetitive pulse
0.01
0.005
0.003
3
Tc = 25°C
Curves must be derated linearly
with increase in temperature
10
30
VCEO max
100
300
1000
100 ms*
(A)
Collector current I
C
0.5
0.3
Collector-emitter voltage V
CE
(V)
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2006-11-09
