SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1267 2SD1267A
DESCRIPTION
·With TO-220Fa package
·High forward current transfer ratio h
FE
which has satisfactory linearity
·Low collector saturation voltage
·Complement to type 2SB942/942A
APPLICATIONS
·For power amplification
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
PARAMETER
2SD1267
Collector-base voltage
2SD1267A
2SD1267
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Collector-emitter voltage
2SD1267A
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
a
=25
T
C
=25
Open collector
Open base
80
5
4
8
2
W
40
150
-55~150
V
A
A
Open emitter
80
60
V
CONDITIONS
VALUE
60
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SD1267
I
C
=30mA ,I
B
=0
2SD1267A
I
C
=4A, I
B
=0.4A
I
C
=3A ; V
CE
=4V
V
EB
=5V; I
C
=0
2SD1267
2SD1267A
2SD1267
2SD1267A
V
CE
=30V; I
B
=0
CONDITIONS
SYMBOL
2SD1267 2SD1267A
MIN
60
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
80
1.5
2.0
1.0
V
V
mA
V
CEsat
V
BE
I
EBO
Collector-emitter saturation voltage
Base-emitter voltage
Emitter cut-off current
Collector
cut-off current
I
CEO
0.7
V
CE
=60V; I
B
=0
V
CE
=60V; V
BE
=0
0.4
V
CE
=80V; V
BE
=0
I
C
=1A ; V
CE
=4V
I
C
=3A ; V
CE
=4V
I
C
=0.5A; V
CE
=5V,f=1MHz
70
15
20
250
mA
I
CES
Collector
cut-off current
mA
h
FE-1
h
FE-2
f
T
DC current gain
DC current gain
Transition frequency
MHz
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=4A;I
B1
=-I
B2
=0.4A
V
CC
=50V
0.4
1.5
0.5
µs
µs
µs
h
FE-1
Classifications
Q
70-150
P
120-250
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1267 2SD1267A
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1267 2SD1267A
4
