INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3799
DESCRIPTION
·Collector-Base
Breakdown Voltage-
: V
(BR)CBO
= 800V(Min.)
·Low
Collector Saturation Voltage
·High
Speed Switching
·
APPLICATIONS
·Designed
for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CES
Collector-Emitter Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
Emitter-Base Voltage
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VALUE
UNIT
800
V
800
V
500
V
8
V
7
A
15
A
4
A
3
W
Collector Current-Continuous
I
CM
Collector Current-Peak
I
B
B
Base Current-Continuous
Collector Power Dissipation
@T
a
=25℃
P
C
Collector Power Dissipation
@T
C
=25℃
T
j
Junction Temperature
100
150
℃
℃
T
stg
Storage Temperature Range
-55~150
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC3799
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 0.2A; L= 25mH
500
V
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 5A; I
B
= 1A
B
1.0
V
V
BE(
sat
)
I
CBO
Base-Emitter Saturation Voltage
I
C
= 5A; I
B
= 1A
B
1.5
V
μA
Collector Cutoff Current
V
CB
= 800V; I
E
= 0
100
I
EBO
Emitter Cutoff Current
V
EB
= 5V; I
C
= 0
100
μA
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
f
T
Current-Gain—Bandwidth Product
Switching Times
t
on
Turn-on Time
t
s
Storage Time
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I
C
= 0.1A; V
CE
= 5V
15
I
C
= 5A; V
CE
= 5V
8
I
C
= 0.5A; V
CE
= 10V; f= 1MHz
I
C
= 5A; I
B1
= -I
B2
= 1A;
V
CC
= 200V
8
MHz
1.0
μs
3.0
μs
t
f
Fall Time
1.0
μs
isc Website：www.iscsemi.cn
