UNISONIC TECHNOLOGIES CO., LTD
2SC4027
HIGH-VOLTAGE SWITCHING
APPLICATIONS
FEATURES
* High voltage and large current capacity.
* Fast switching time.
NPN SILICON TRANSISTOR
1
TO-220
1
TO-252
ORDERING INFORMATION
Ordering Number
Lead Free
2SC4027L-x-TA3-T
2SC4027L-x-TN3-R
Halogen Free
2SC4027G-x-TA3-T
2SC4027G-x-TN3-R
Package
TO-220
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tube
Tape Reel
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2SC4027
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
RATINGS
UNIT
180
V
160
V
6
V
1.5
A
2.5
A
2
TO-220
W
T
A
=25°C
TO-252
1
Collector Dissipation
P
C
TO-220
65
T
C
=25°C
W
TO-252
15
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Storage Time
Fall Time
SYMBOL
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
BE(SAT)
I
CBO
I
EBO
h
FE1
h
FE2
f
T
C
OB
T
ON
T
STG
t
F
TEST CONDITIONS
I
C
=10A, I
E
=0
I
C
=1mA, R
BE
=∞
I
E
=10μA, I
C
=0
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CB
=120V, I
E
=0
V
EB
=4V, I I
C
=0
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CB
=-10V, f=1MHz
See specified Test Circuit
MIN
180
160
6
TYP MAX UNIT
V
V
V
0.13 0.45
V
0.85 1.2
V
1.0
μA
1.0
μA
400
120
12
60
1.2
80
MHz
pF
μs
μs
μs
100
80
CLASSIFICATION OF h
FE1
RANK
RANGE
R
100~200
S
140~280
T
200~400
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QW-R209-018.C
2SC4027
SWITCHING TIME TEST CIRCUIT
INPUT
PW=20µs
D.C.≤1%
50Ω
I
B1
R
B
I
B2
NPN SILICON TRANSISTOR
OUTPUT
R
L
14kΩ
+
470µF
VR
+
100µF
-5V
100V
10I
B1
= -10I
B2
=Ic=0.7A
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2SC4027
TYPICAL CHARACTERISTICS
Collector Current vs.
Collector to Emitter Voltage
40mA 50mA
30mA
20mA
10mA
5mA
NPN SILICON TRANSISTOR
1.8
1.6
Collector Current, Ic (A)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1.0
Collector Current, Ic (A)
0.8
0.6
0.4
0.2
0
0m
Collector Current vs.
Collector to Emitter Voltage
4.5mA
4.0mA
3.5mA
5.
A
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
I
B
=0
0
40
10
30
50
20
Collector to Emitter Voltage, V
CE
(V)
DC Current vs. Collector Current
2mA
1mA
I
B
=0
1
2
3
4
5
Collector to Emitter Voltage, V
CE
(V)
Collector Current vs.
Base to Emitter Voltage
V
CE
=5V
1.6
1000
V
CE
=5V
T
A
=75°C
Collector Current, Ic (A)
DC Current Gain, h
FE
1.2
0.8
T
A
=75°C
T
A
=25°C
T
A
=-25°C
100
25°C
-25°C
0.4
0
0
0.2 0.4 0.6 0.8
1.2
1.0
Base to Emitter Voltage, V
BE
(V)
Gain Bandwidth Product vs.
Collector Current
V
CE
=10V
Output Capacitance, C
ob
(pF)
10
0.01
0.1
1.0
Collector Current, Ic (A)
Output Capacitance vs.
Collector to Base Voltage
f=1MHz
100
Gain Bandwidth Product, f
T
(MHz)
100
10
10
0.01
0.1
1.0
Collector Current, Ic (A)
1.0
10
100
Collector to Base Voltage, V
CB
(V)
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TYPICAL CHARACTERISTICS(Cont.)
Collector to Emitter Saturation Voltage
vs. Collector Current
Collector to Emitter
Saturation Voltage, V
CE(SAT)
(V)
Ic/I
B
=10
Collector to Emitter Saturation
Voltage, V
CE(SAT)
(V)
1000
NPN SILICON TRANSISTOR
10
Collector to Emitter Saturation Voltage
vs. Collector Current
Ic/I
B
=10
100
T
A
=75°C
T
A
=25°C
T
A
=-25°C
1.0 T
A
=-25°C 25°C
75°C
0.01
0.1
1.0
Collector Current, Ic (A)
Collector Dissipation vs.
Ambient Temperature
0.01
0.1
1.0
Collector Current, Ic (A)
Collector Current, Ic (A)
C
1.0
DC
Collector Dissipation, Pc (W)
Collector Current vs.
Collector to Emitter Voltage
I
CP
=2.5A
1m
s
I =1.5A
s
0m
10
ms
10
16
14
12
10
8
6
4
2
0
0
C
D
at
er
op
n
io
op
er
(T
ati
on
(
0.1
A
=2
5°
T
A
)
C
=2
5°
C)
No heat sink
0.01
One pulse
Tc =25°C
1.0
10
100
Collector to Emitter Voltage, V
CE
(V)
20 40 60 80 100 120 140 160
Ambient Temperature, T
A
(°C)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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