A Business Partner of Renesas Electronics Corporation.
Preliminary
NE85630 / 2SC4226
JEITA
Part No.
Data Sheet
R09DS0022EJ0200
NPN Silicon RF Transistor
Rev.2.00
Jun 29, 2011
NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
DESCRIPTION
super minimold package.
It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin
FEATURES
• Low noise : NF = 1.2 dB TYP. @ V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
• 3-pin super minimold package
<R>
• High gain :
⏐S
21e
⏐
2
= 9 dB TYP. @ V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
ORDERING INFORMATION
Part Number
NE85630
2SC4226
NE85630-T1
2SC4226-T1
Order Number
NE85630-A
2SC4226-A
NE85630-T1-A
2SC4226-T1-A
Package
3-pin super
Minimold
(Pb-Free)
Quantity
50 pcs (Non reel)
3 kpcs/reel
Remark
To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
AS
Parameter
Symbol
V
CBO
Ratings
20
12
3
V
CEO
V
EBO
I
C
100
P
tot
Note
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
PH
Note
Free air
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
E-
Unit
V
V
V
mA
mW
°C
°C
150
T
j
150
T
stg
−65
to +150
The mark <R> shows major revised points.
O
UT
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side of the tape
The
NE85630 /
2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.
CAUTION
Page 1 of 6
A Business Partner of Renesas Electronics Corporation.
NE85630 / 2SC4226
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
I
CBO
I
EBO
h
FE
Note 1
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 3 V, I
C
= 7 mA
−
−
40
−
−
110
1.0
1.0
250
μ
A
μ
A
–
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
⏐S
21e
⏐
NF
C
re
2
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
<R>
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
R23/Y23
R23
40 to 80
R24/Y24
R24
70 to 140
PH
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
AS
Page 2 of 6
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7
9
–
dB
−
1.2
2.5
dB
pF
−
0.7
1.5
R25/Y25
R25
125 to 250
Gain Bandwidth Product
f
T
V
CE
= 3 V, I
C
= 7 mA
3.0
4.5
–
GHz
A Business Partner of Renesas Electronics Corporation.
NE85630 / 2SC4226
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
250
Total Power Dissipation P
tot
(mW)
5
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
f = 1 MHz
Free Air
200
150
100
50
2
1
0.5
0
25
50
75
100
125
150
Ambient Temperature T
A
(˚C)
20
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 3 V
Collector Current I
C
(mA)
E-
10
5
0.5
1
0
5
Base to Emitter Voltage V
BE
(V)
10
AS
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 3 V
1
5
10
50
Collector Current I
C
(mA)
0
200
100
Gain Bandwidth Product f
T
(GHz)
PH
DC Current Gain h
FE
50
20
10
0.5
Remark
The graphs indicate nominal characteristics.
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
O
UT
0.2
0.1
1
2
5
10
20
50
Collector to Base Voltage V
CB
(V)
25
20
15
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
μ
A
160
140
μ
A
μ
120
A
100
μ
A
80
μ
A
60
μ
A
40
μ
A
I
B
= 20
μ
A
10
Collector to Emitter Voltage V
CE
(V)
20
10
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
V
CE
= 3 V
f = 1 GHz
5
2
1
0.5
1
5
10
50
Collector Current I
C
(mA)
Page 3 of 6
A Business Partner of Renesas Electronics Corporation.
NE85630 / 2SC4226
INSERTION POWER GAIN
vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
V
CE
= 3 V
I
C
= 7 mA
24
15
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
V
CE
= 3 V
f = 1 GHz
Insertion Power Gain |S
21e
|
2
(dB)
20
16
12
8
4
0
0.1
0.2
0.5
1
2
10
5
5
Frequency f (GHz)
6
5
NOISE FIGURE vs.
COLLECTOR CURRENT
V
CE
= 3 V
f = 1 GHz
Noise Figure NF (dB)
4
3
2
1
0
0.5
1
5
10
Remark
The graphs indicate nominal characteristics.
PH
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
AS
Page 4 of 6
Collector Current I
C
(mA)
E-
50
100
O
UT
0
0.5
1
5
10
50
100
Collector Current I
C
(mA)
A Business Partner of Renesas Electronics Corporation.
NE85630 / 2SC4226
S-PARAMETERS
the parameters to microwave circuit simulators without the need for keyboard inputs.
[RF and Microwave]
→
[Device Parameters]
Click here to download S-parameters.
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of
URL http://www2.renesas.com/microwave/en/download.html
PH
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
AS
Page 5 of 6
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