INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC4230
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 800V(Min)
·Fast
Switching speed
APPLICATIONS
·Electronic
ballasts for fluorescent lighting
·Switch
mode power supplies
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Total Power Dissipation
@ T
C
=25℃
Junction Temperature
w
.cn
i
em
cs
.is
w
w
1200
800
7
V
V
V
2
A
4
A
1
A
2
50
150
-55~150
A
W
℃
℃
VALUE
UNIT
I
BM
P
T
T
J
T
stg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.5
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE(
sat
)
V
BE(
sat
)
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
CONDITIONS
I
C
= 0.1A; I
B
= 0
I
C
= 1A; I
B
= 0.2A
B
2SC4230
MIN
800
TYP.
MAX
UNIT
V
1.0
1.5
100
100
100
V
V
μA
μA
μA
I
C
= 1A; I
B
= 0.2A
B
At rated Voltage
At rated Voltage
At rated Voltage
Current-Gain—Bandwidth Product
Switching times
t
on
t
stg
t
f
Turn-on Time
Storage Time
Fall Time
w
.cn
i
em
cs
.is
w
w
I
C
= 1A ; V
CE
= 5V
8
I
C
= 1mA ; V
CE
= 5V
7
I
C
= 0.2A ; V
CE
= 10V
I
C
= 1A , I
B1
= 0.2A; I
B2
= -0.4A
R
L
= 250Ω; V
BB2
= 4V
8
MHz
0.5
3.5
0.3
μs
μs
μs
isc Website：www.iscsemi.cn
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