NPN SILICON RF TRANSISTOR
NE678M04 / 2SC5753
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (60 mW)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
FEATURES
• Ideal for medium output power amplification
• HFT3 technology (f
T
= 12 GHz) adopted
• High reliability through use of gold electrodes
JEITA
Part No.
• P
O (1 dB)
= 18.0 dBm TYP. @ V
CE
= 2.8 V, f = 1.8 GHz, P
in
= 7 dBm
• Flat-lead 4-pin thin-type super minimold package
ORDERING INFORMATION
Part Number
NE678M04-A
2SC5753-A
NE678M04-T2-A
2SC5753-T2-A
3 kpcs/reel
Quantity
50 pcs (Non reel)
• 8 mm wide embossed taping
Remark
To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Collector to Base Voltage
PH
A
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
P
tot
Note
Collector to Emitter Voltage
Note
Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy PCB
Caution
:
Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. P15659EJ1V0DS00 (1st edition)
Date Published August 2001 NS CP(K)
SE
-
Ratings
9.0
6.0
2.0
100
205
150
65
to +150
Unit
V
V
V
mA
mW
C
C
T
j
T
stg
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
O
UT
Supplying Form
NE678M04 / 2SC5753
THERMAL RESISTANCE
Parameter
Junction to Ambient Resistance
Symbol
R
th j-a
Note
Value
600
Unit
C/W
Note
Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy PCB
ELECTRICAL CHARACTERISTICS (T
A
= +25C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
f
T
½S
21e
½
NF
C
re
Note 2
2
Symbol
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
BE
= 1 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 30 mA
V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
SE
-
MAG
Note 3
Maximum Available Power Gain
Linear Gain
V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
G
L
V
CE
= 2.8 V, I
Cq
= 10 mA, f = 1.8 GHz,
P
in
=
5
dBm
V
CE
= 2.8 V, I
Cq
= 10 mA, f = 1.8 GHz,
P
in
= 7 dBm
V
CE
= 2.8 V, I
Cq
= 10 mA, f = 1.8 GHz,
P
in
= 7 dBm
Gain 1 dB Compression Output Power
Collector Efficiency
P
O (1 dB)
C
Notes 1.
Pulse measurement: PW
350
s, Duty Cycle
2%
S
21
(K –
(K
2
– 1) )
S
12
2.
Collector to base capacitance when the emitter grounded
3.
MAG =
PH
A
h
FE
CLASSIFICATION
Rank
FB
Marking
R55
h
FE
Value
75 to 150
2
Data Sheet P15659EJ1V0DS
O
UT
Test Conditions
MIN.
TYP.
MAX.
Unit
100
100
150
nA
nA
75
120
12.0
10.5
1.7
GHz
dB
dB
pF
dB
dB
dBm
%
8.0
2.5
0.7
0.42
13.5
13.0
18.0
55
NE678M04 /
2SC5753
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(mW)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
300
250
200
150
100
50
205
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
f = 1 MHz
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
0
25
50
75
100
125
150
Ambient Temperature T
A
(˚C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
V
CE
= 3 V
AS
E-
Collector Current I
C
(mA)
Collector Current I
C
(mA)
0.0001
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage V
BE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 3 V
PH
DC Current Gain h
FE
100
10
0.1
1
10
100
Collector Current I
C
(mA)
Data Sheet P15659EJ1V0DS
O
UT
1
2
3
4
5
6
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
700
µ
A
100
90
80
70
60
50
40
30
20
10
0
600
µ
A
500
µ
A
400
µ
A
300
µ
A
200
µ
A
I
B
= 100
µ
A
4
6
8
2
Collector to Emitter Voltage V
CE
(V)
3
NE678M04 /
2SC5753
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
MSG
25
20
15
10
5
MAG
V
CE
= 3 V
I
C
= 30 mA
15
Gain Bandwidth Product f
T
(GHz)
V
CE
= 3 V
f = 2 GHz
10
5
0
1
10
Collector Current I
C
(mA)
100
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
V
CE
= 3 V
f = 1 GHz
20
MSG
MAG
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
AS
E-
15
|S
21e
|
2
15
MSG
10
10
5
0
5
1
10
100
0
1
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
| (dB)
Maximum Available Power Gain MAG (dB)
25
V
CE
= 3 V
f = 2.5 GHz
20
PH
2
15
MAG
10
5
0
|S
21e
|
2
1
10
100
Collector Current I
C
(mA)
4
Data Sheet P15659EJ1V0DS
O
UT
|S
21e
|
2
0
0.1
1
10
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
V
CE
= 3 V
f = 2 GHz
25
20
MAG
|S
21e
|
2
10
100
Collector Current I
C
(mA)
2SC5753
NE678M04 /
2SC5753
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25
V
CE
= 3.2 V
f = 0.9 GHz
I
Cq
= 10 mA (RF OFF)
250
P
out
200
G
P
20
15
150
10
100
I
C
5
0
–10
η
C
50
0
15
–5
0
5
10
Input Power P
in
(dBm)
Collector Current I
C
(mA), Collector Efficiency
η
C
(%)
25
20
V
CE
= 2.8 V
f = 1.8 GHz
I
Cq
= 10 mA (RF OFF)
250
P
out
25
200
20
V
CE
= 3.2 V
f = 1.8 GHz
I
Cq
= 10 mA (RF OFF)
250
P
out
200
AS
E-
150
15
G
P
100
10
15
G
P
150
10
100
η
C
η
C
50
I
C
10
15
0
20
5
0
–5
50
5
I
C
0
5
10
15
0
20
0
–5
0
5
Input Power P
in
(dBm)
Input Power P
in
(dBm)
25
PH
20
V
CE
= 3.2 V
f = 2.4 GHz
I
Cq
= 10 mA (RF OFF)
250
P
out
200
15
150
G
P
10
100
η
C
I
C
5
50
0
20
0
–5
0
5
10
15
Input Power P
in
(dBm)
Collector Current I
C
(mA), Collector Efficiency
η
C
(%)
Output Power P
out
(dBm), Power Gain G
P
(dB)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Data Sheet P15659EJ1V0DS
Collector Current I
C
(mA), Collector Efficiency
η
C
(%)
Output Power P
out
(dBm), Power Gain G
P
(dB)
Output Power P
out
(dBm), Power Gain G
P
(dB)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
O
UT
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
5
Collector Current I
C
(mA), Collector Efficiency
η
C
(%)
Output Power P
out
(dBm), Power Gain G
P
(dB)
