Midium Power Transistors (50V / 3A)
2SCR533P
Structure
NPN Silicon epitaxial planar transistor
Features
1) Low saturation voltage, typically
V
CE (sat)
= 0.13V (Max.) (I
C
/ I
B
= 1A / 50mA)
2) High speed switching
Applications
Driver
Packaging specifications
Package
Taping
Type
Code
T100
Basic ordering unit (pieces) 1000
2SCR533P
Absolute maximum ratings
(Ta = 25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recommended land.
*3 Mounted on a ceramic board. (40x40x0.7mm³)
Dimensions
(Unit : mm)
(1)
(2)
(3)
Abbreviated symbol : NM
Inner circuit
(Unit : mm)
(2)
(1)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
P
D
T
j
T
stg
*1
*2
*3
Limits
50
50
6
3
6
0.5
2
150
-55 to 150
Unit
V
V
V
A
A
W
W
C
C
(1) Base
(2) Collector
(3) Emitter
(3)
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1/4
2009.12 - Rev.A
2SCR533P
Electrical
characteristic
(Ta = 25C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
Data Sheet
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
*
V
CE(sat)1
h
FE
f
T
*
1
C
ob
t
on
*
2
t
stg
*
2
t
f
*
2
Min.
50
50
6
-
-
-
180
-
-
-
-
-
Typ.
-
-
-
-
-
130
-
320
13
50
450
80
Max.
-
-
-
1
1
350
450
-
-
-
-
-
Unit
V
V
V
A
A
-
MHz
pF
ns
ns
ns
Conditions
I
C
= 1½A
I
C
= 100μA
I
E
= 100μA
V
CB
= 50V
V
EB
= 4V
V
CE
= 3V, I
C
= 50mA
V
CE
= 10V
I
E
=-500mA, f=100MHz
V
CB
= 10V, I
E
=0A
f=1MH½
I
C
= 1.5A,I
B1
= 150mA,
I
B2
=-150mA,V
CC
~
10V
_
mV I
C
= 1A, I
B
= 50mA
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2009.12 - Rev.A
2SCR533P
Electrical
characteristic curves
5mA
0.50
3.0mA
2.5mA
2.0mA
1000
Ta=25°C
1000
V
CE
=3V
Data Sheet
COLLECTOR CURRENT : I
C
[A]
0.45
1.5mA
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
0.5
1
Ta=25°C
1.5
2
0.5mA
1.0mA
100
V
CE
=5V
3V
DC CURRENT GAIN : hFE
DC CURRENT GAIN : hFE
0.40
100
Ta=125°C
75°C
25°C
-40°C
10
1
10
100
1000
10000
10
1
10
100
1000
10000
COLLECTOR CURRENT : I
C
[mA]
Fig3. DC Current Gain vs.
Collector Current (
ΙΙ
)
COLECTOR TO EMITTER VOLTAGE : V
CE
[V]
Fig.1 Typical Output Characteristics
COLLECTOR CURRENT : I
C
[mA]
Fig.2 DC Current Gain vs.
Collector Current (
Ι
)
COLLECTOR SATURATION VOLTAGE : V
CE
(sat)[V]
COLLECTOR SATURATION VOLTAGE : V
CE
(sat)[V]
1
Ta=25°C
1
I
C
/I
B
=20
10000
V
CE
=3V
COLLECTOR CURRENT : I
C
[mA]
1000
0.1
0.1
Ta=125°C
75°C
25°C
-40°C
100
0.01
I
C
/I
B
=50
20
10
0.01
Ta=125°C
75°C
25°C
-40°C
10
0.001
1
10
100
1000
10000
COLLECTOR CURRENT : I
C
[mA]
Fig.4 Collector-Emitter Saturation Voltage
vs. Collector Current (
Ι
)
0.001
1
10
100
1000
10000
COLLECTOR CURRENT : I
C
[mA]
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current (
ΙΙ
)
1
0
0.5
1
1.5
BASE TO EMITTER VOLTAGE : V
BE
[V]
Fig.6 Ground Emitter Propagation
Characteristics
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
1000
EMITTER INPUT CAPACITANCE : Cib(pF)
TRANSITION FREQUENCY : f
T
[MHz]
Cib
100
COLLECTOR CURRENT : I
C
[A]
Ta=25°C
f=1MHz
I
E
=0A
I
C
=0A
1000 Ta=25°C
V
CE
=10V
10
Single pulse
1ms
10ms
1
100ms
100
10
Cob
0.1 DC Ta=25°C
(Mounted on a
recommended land)
DC Ta=25°C
(Mounted on a ceramic board)
0.01
0.1
1
10
100
1
0.1
1
10
100
10
10
100
EMITTER CURRENT : I
E
[mA]
Fig.8 Gain Bandwidth Product vs.
Emitter Current
1000
COLLECTOR - BASE VOLTAGE : V
CB
[V]
EMITTER - BASE VOLTAGE : V
EB
[V]
Fig.7 Emitter Input Capacitance vs.
Emitter-Base Voltage
Collector Output Capacitance vs.
Collector-Base Voltage
COLLECTOR TO EMITTER VOLTAGE : V
CE
[V]
Fig.9 Safe Operating Area
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2009.12 - Rev.A
2SCR533P
Switching
time test circuit
Data Sheet
R
L
=6.8Ω
V
IN
I
B1
I
C
I
B2
Pw
Pw
V
CC
_
~
10V
~
50μs
_
DUTY CYCLE1%
I
B1
BASE CURENT WAVEFORM
I
B2
t
on
90%
COLLECTOR CURRENT
WAVEFORM
10%
t
stg
t
f
I
C
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2009 ROHM Co., Ltd. All rights reserved.
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2009.12 - Rev.A
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