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2SD1160_06

Silicon NPN Epitaxial Type (PCT Process)

厂商名称:Toshiba(东芝)

厂商官网:http://toshiba-semicon-storage.com/

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2SD1160
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
2SD1160
Switching Applications
Suitable for Motor Drive Applications
High DC current gain
Low saturation voltage: V
CE (sat)
= 0.6 V (max) (I
C
= 2A, I
B
= 40 mA)
Built-in free wheel diode
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
FP
P
C
T
j
T
stg
Rating
50
20
6
2
4
1
1
10
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
Diode forward surge current (t = 1 s)
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
JEDEC
JEITA
TOSHIBA
2-7B1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.36 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
800
EMITTER
1
2006-11-21
2SD1160
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter sustaining voltage
Symbol
I
CBO
I
EBO
V
CEO (SUS)
h
FE (1)
DC current gain
(Note)
h
FE (2)
Collector emitter saturation voltage
Base-emitter saturation voltage
Emitter-collector forward voltage
V
CE (sat)
V
BE (sat)
V
ECF
Test Condition
V
CB
= 50 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
I
C
= 20 mA, L = 40 mH
V
CE
= 2 V, I
C
= 1 A
V
CE
= 2 V, I
C
= 2 A
I
C
= 2 A, I
B
= 40 mA
I
C
= 2 A, I
B
= 40 mA
I
E
= 1 A, I
B
= 0
Min
2.5
20
100
60
Typ.
6.25
0.4
Max
1
15
300
0.6
1.5
2.0
V
V
V
Unit
μA
mA
V
Note: h
FE (1)
classification O: 100 to 200, Y: 150 to 300
Classification
2SD1160-O
2SD1160-Y
Min
100
150
Max
200
300
Marking
D1160
Part No. (or abbreviation code)
Lot No.
Characteristics
indicator
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-21
2SD1160
I
C
– V
CE
1.0
8
10
0.8
6
0.6
5
4
0.4
3
IB = 2 mA
0
0
0
2
4
6
8
10
12
14
10
10
30
100
Common
emitter
Tc = 25°C
1000
h
FE
– I
C
Common emitter
500
VCE = 2 V
Tc = 100°C
25
100
−25
50
30
Collector current I
C
0.2
DC current gain h
FE
(A)
300
300
1000
3000
Collector current I
C
(mA)
Collector-emitter voltage
V
CE
(V)
V
CE (sat)
– I
C
Collector-emitter saturation voltage
V
CE (sat)
(V)
1
Common emitter
10
V
BE (sat)
– I
C
Common emitter
Base-emitter saturation voltage
V
BE (sat)
(V)
0.5
0.3
IC/IB = 50
Tc =
−25°C
25
100
5
3
IC/IB = 50
0.1
1
Tc =
−25°C
0.05
0.03
30
0.5
25
100
100
300
1000
3000
Collector current I
C
(mA)
0.2
30
100
300
1000
3000
Collector current I
C
(mA)
I
E
– V
ECF
1000
500
IB = 0
r
th
– t
w
Transient thermal resistance rth (°C/W)
Curves apply only to limited areas of thermal
resistance.
(Single nonrepetitive pulse)
Tc = 25°C
I
E
(mA)
1000
300
Tc = 100°C
25
−25
100
Emitter current
100
50
30
10
1
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1m
10 m
100 m
1
10
100
1000
Emitter-collector forward voltage
V
ECF
(V)
Pulse width
tw (s)
3
2006-11-21
2SD1160
Safe Operating Area
Operating conditions used for a
1
test circuit shown in Figure 1
must not exceed this shaded
area.
0.5
Tc = 25°C
10 V
L = 10 mH
3 ms
INPUT
2 ms
T.U.T
330
V
CC
Collector current I
C
(A)
Figure 1
0.01
0
0
10
20
30
40
50
60
70
Safe Operating Area Test Circuit
Collector-emitter voltage
V
CE
(V)
P
C
– Ta
1.2
P
C
(W)
Collector power dissipation
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
4
2006-11-21
2SD1160
RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
20070701-EN
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2006-11-21
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参数对比
与2SD1160_06相近的元器件有:2SD1160。描述及对比如下:
型号 2SD1160_06 2SD1160
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