SMD Type
NPN Transistors
2SD1418-HF
Transistors
■
Features
●
Low frequency power amplifier
●
Complementary to 2SB1025-HF
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
0.42 0.1
1.70
0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note.1:PW
≤
10 ms, Duty cycle
≤
20%.
(Note.1)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
stg
Rating
120
80
5
1
2
1
150
-55 to 150
A
W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
h
FE
C
ob
f
T
Test Conditions
Ic= 100 uA， I
E
= 0
Ic= 1 mA，R
BE
=
∞
I
E
= 100 uA， I
C
= 0
V
CB
= 100 V , I
E
= 0
V
EB
= 5V , I
C
=0
I
C
=500 mA, I
B
=50 mA
I
C
=500 mA, I
B
=50 mA
V
CE
= 5V, I
C
= 150 mA
V
CE
= 5V, I
C
= 150 mA
V
CE
= 5V, I
C
= 500 mA
V
CB
= 10V, I
E
= 0,f=1MHz
V
CE
= 5V, I
C
= 150mA
60
30
12
140
pF
MHz
Min
120
80
5
10
0.1
1
1.2
1.5
320
V
uA
V
Typ
Max
Unit
■
Classification of h
fe(1)
Type
Range
Marking
2SD1418-A-HF
60-120
DA
F
2SD1418-B-HF 2SD1418-C-HF
100-200
DB
F
160-320
DC
F
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SMD Type
NPN Transistors
2SD1418-HF
■
Typical Characterisitics
1.2
Maximum Collector Dissipation Curve
1.0
0.8
0.6
0.4
0.2
Transistors
Typical Output Characteristics
35
30
25
20
15
10
5
2
1
0.5 mA
I
B
= 0
2
4
6
8
10
Collector to Emitter Voltage V
CE
(V)
Collector Power Dissipation P
C
(W)
(on the alumina ceramic board)
0.8
0.4
Collector Current I
C
(A)
50
100
150
。
Ambient Temperature Ta ( C)
。
DC Current Transfer Ratio h
FE
C
25
–25
0
0
Typical Transfer Characteristics
500
Collector Current I
C
(mA)
200
100
Ta = 75
V
CE
= 5 V
DC Current Transfer Ratio vs. Collector Current
300
V
CE
= 5 V
。
C
250
Ta = 75
200
150
100
50
0
50
20
10
5
2
1
0
25
–25
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
1
3
10
30
100
300 1,000
Collector Current I
C
(mA)
Collector Output Capacitance C
ob
(pF)
Gain Bandwidth Product f
T
(MHz)
Gain Bandwidth Product vs. Collector Current
240
V
CE
= 5 V
Pulse
200
160
120
80
40
0
10
200
100
50
20
10
5
2
Collector Output Capacitance vs.
Collector to Base Voltage
f = 1 MHz
I
E
= 0
30
100
300
Collector Current I
C
(mA)
1,000
1
2
5
10 20
50 100
Collector to Base Voltage V
CB
(V)
2
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SMD Type
NPN Transistors
2SD1418-HF
■
Typical Characterisitics
0.6
0.5
0.4
0.3
0.2
0.1
0
1.2
1.0
0.8
0.6
0.4
0.2
0
V
BE(sat)
Transistors
Saturation Voltage vs. Collector Current
I
C
= 10 I
B
Pulse
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Base to Emitter Saturation Voltage V
BE(sat)
(V)
V
CE(sat)
1
3
10
30
100 300
Collector Current I
C
(mA)
1,000
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