Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1535
DESCRIPTION
·With
TO-220Fa package
·Wide
area of safe operation
·High
breakdown voltage
·DARLINGTON
APPLICATIONS
·For
high power amplification
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2.0
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
12
7
14
0.5
50
W
UNIT
V
V
V
A
A
A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=0.1A; R
BZ
=∞,L=25mH
I
C
=7A ; I
B
=70mA
I
C
=7A ; I
B
=70mA
V
CB
=500V; I
E
=0
V
CE
=400V; I
B
=0
V
EB
=12V; I
C
=0
I
C
=2A ; V
CE
=2V
I
C
=6A ; V
CE
=2V
I
C
=0.5A ; V
CE
=10V;f=1MHz
500
200
20
MIN
400
2SD1535
TYP.
MAX
UNIT
V
2.0
2.5
0.1
0.1
100
V
V
mA
mA
mA
MHz
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=7A ; I
B1
=-I
B2
=70mA
V
CC
=300V
1.5
5.0
6.5
μs
μs
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1535
Fig.2 Outline dimensions (unindicated tolerance:
±0.15
mm)
3
