INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD1576
DESCRIPTION
·High
Collector-Base Breakdown Voltage-
: V
(BR)CBO
= 1500V (Min.)
·High
Switching Speed
·Wide
Area of Safe Operation
APPLICATIONS
·Designed
for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CES
Collector- Emitter Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current- Continuous
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VALUE
UNIT
1500
V
1500
V
700
V
6
V
2
A
6
A
2.5
A
2.5
W
I
CM
Collector Current-Peak
I
BM
Base Current-Peak
Collector Power Dissipation
@ T
a
=25℃
P
C
Collector Power Dissipation
@ T
C
=25℃
T
J
Junction Temperature
80
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SD1576
TYP.
MAX
UNIT
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 2A; I
B
= 1A
B
5.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 2A; I
B
= 1A
B
1.5
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 1mA; I
C
= 0
V
CB
= 750V; I
E
= 0
V
CB
= 1500V; I
E
= 0
I
C
= 2A; V
CE
= 5V
6
50
1.0
2
V
μA
mA
I
CBO
Collector Cutoff Current
h
FE
DC Current Gain
f
T
Current-Gain—Bandwidth Product
Switching times
t
stg
Storage Time
t
f
Fall Time
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I
C
= 0.5A; V
CE
= 10V; f
test
= 0.5MHz
I
C
= 2.5A , I
B
= 1.1A; L
B
= 10μH
2
MHz
9.0
μs
1.0
μs
isc Website：www.iscsemi.cn
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