Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1588
DESCRIPTION
・With
TO-220Fa package
・Complement
to type 2SB1097
・Low
speed switching
APPLICATIONS
・For
low frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Fig.1 simplified outline (TO-220Fa) and symbol
Emitter
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
100
60
7
7
15
3.5
30
W
UNIT
V
V
V
A
A
A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SD1588
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=50mA , I
B
=0
60
V
V
CEsat
V
BEsat
Collector-emitter saturation voltage
I
C
=5A; I
B
=0.5A
I
C
=5A ;I
B
=0.5A
0.5
V
Base-emitter saturation voltage
1.5
V
μA
μA
I
CBO
Collector cut-off current
V
CB
=80V; I
E
=0
10
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
10
h
FE-1
DC current gain
I
C
=3A ; V
CE
=1V
40
200
h
FE-2
DC current gain
I
C
=5A ; V
CE
=1V
20
h
FE-1
Classifications
M
40-80
L
60-120
K
100-200
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1588
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
