UNISONIC TECHNOLOGIES CO., LTD
2SD1616/A
NPN EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
* Audio frequency power amplifier
* Medium speed switching
NPN SILICON TRANSISTOR
1
SOT-89
1
TO-92
1
SIP-3
1
TO-92SP
*Pb-free plating product number:
2SD1616L/2SD1616AL
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SD1616-x-AB3-R
2SD1616L-x-AB3-R
2SD1616-x-G03-K
2SD1616L-x-G03-K
2SD1616-x-T92-B
2SD1616L-x-T92-B
2SD1616-x-T92-K
2SD1616L-x-T92-K
2SD1616-x-T9S-K
2SD1616L-x-T9S-K
2SD1616A-x-AB3-R
2SD1616AL-x-AB3-R
2SD1616A-x-G03-K
2SD1616AL-x-G03-K
2SD1616A-x-T92-B
2SD1616AL-x-T92-B
2SD1616A-x-T92-K
2SD1616AL-x-T92-K
2SD1616A-x-T9S-K
2SD1616AL-x-T9S-K
Package
SOT-89
SIP-3
TO-92
TO-92
TO-92SP
SOT-89
SIP-3
TO-92
TO-92
TO-92SP
Pin Assignment
1
2
3
B
C
E
E
C
B
E
C
B
E
C
B
E
C
B
B
C
E
E
C
B
E
C
B
E
C
B
E
C
B
Packing
Tape Reel
Bulk
Tape Box
Bulk
Bulk
Tape Reel
Bulk
Tape Box
Bulk
Bulk
2SD1616L-x-AB3-T
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube
(2) AB3: SOT-89, G03: SIP-3, T92: TO-92,
T 9S: TO-92S
(3) x: refer to Classification of h
FE1
(4) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 4
QW-R201-008,C
2SD1616/A
ABSOLUTE MAXIMUM RATINGS
(Ta=25
°
C)
PARAMETER
SYMBOL
NPN SILICON TRANSISTOR
RATINGS
UNIT
2SD1616
60
Collector to Base Voltage
V
CBO
V
2SD1616A
120
2SD1616
50
Collector to Emitter Voltage
V
CEO
V
2SD1616A
60
Emitter to Base Voltage
V
EBO
6
V
DC
I
C
1
A
Collector Current
2
A
Pulse(Note2)
I
CM
Total Power Dissipation
P
C
750
mW
Junction Temperature
T
J
+150
°
C
Storage Temperature
T
STG
-55 ~ +150
°
C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width
≤
10ms, Duty cycle<50%
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C, unless otherwise specified.)
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base Emitter On Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Transition Frequency
Output Capacitance
Turn On Time
Storage Time
Fall Time
SYMBOL
V
CE (SAT)
V
BE (SAT)
V
BE (ON)
I
CBO
I
EBO
h
FE1
h
FE2
f
T
C
ob
t
ON
t
STG
t
F
TEST CONDITIONS
I
C
=1A, I
B
=50mA
I
C
=1A, I
B
=50mA
V
CE
=2V, I
C
=50mA
V
CB
=60V
V
EB
= 6V
2SD1616
V
CE
=2V, I
C
=100mA
2SD1616A
V
CE
=2V, I
C
=1A
V
CE
=2V, I
C
=100mA
V
CB
=10V, f =1MHz
V
CE
=10V, I
C
=100mA
I
B1
= -I
B2
=10mA
V
BE(OFF)
= -2 ~ -3V
MIN
TYP
0.15
0.9
640
MAX UNIT
0.3
V
1.2
V
700
mV
100
nA
100
nA
600
400
MHz
pF
μ
s
μ
s
μ
s
600
135
135
81
100
160
19
0.07
0.95
0.07
CLASSIFICATION OF h
FE1
RANK
h
FE1
Y
135 ~ 270
G
200 ~ 400
L
300 ~ 600
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2 of 4
QW-R201-008,C
2SD1616/A
TYPICAL CHARACTERISTICS
Collector Output Capacitance
1000
500
300
Capacitance, C
ob
(pF)
Current Gain-Bandwidth Product, f
T
(MHz)
NPN SILICON TRANSISTOR
Current Gain-Bandwidth Product
1000
V
CE
=2V
500
300
100
50
30
10
5
3
1
0.01
0.03
0.1
0.3
1
3 5
10
Collector Current, I
C
(A)
I
E
=0
f=1.0MHz
100
50
30
10
5
3
1
3
5
10
30 50
100
300
Collector-Base Voltage, V
CB
(V)
Static Characteristic
100
I
B
=300μA
I
B
=250μA
Collector Current, I
C
(A)
Static Characteristic
4.
0m
A
10
I
B
=5.0mA
mA
I
B
=
4 .5
I
B
=3.5mA
I
B
=3.0mA
I
B
=2.5mA
I
B
=2.0mA
I
B
=1.5mA
I
B
=1.0mA
Collector Current , I
C
(mA)
80
0.8
60
I
B
=200μA
0.6
I
B
=150μA
40
I
B
=100μA
20
I
B
=50μA
0.4
0.2
I
B
=0.5mA
0
2
4
6
8
10
0
0.2
I
B
=
0.4
0.6
0.8
10
Collector-Emitter Voltage , V
CE
(V)
Collector-Emitter Voltage, V
CE
(V)
Switching Time
10
5
3
Time, t
ON
, t
STG
, t
F
(μs)
V
CC
=10V
I
C
=10×I
B1
= -10×I
B2
1
0.5
0.3
0.1
0.05
0.03
0.01
0.001 0.003
t
STG
t
F
t
ON
0.01 0.030.05 0.1
Collector Current, I
C
(A)
0.30.5
1
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3 of 4
QW-R201-008,C
2SD1616/A
TYPICAL CHARACTERISTICS(Cont.)
DC Current Gain
1000
500
300
DC Current Gain, h
FE
Saturation Voltage, V
CE (SAT)
, V
BE (SAT)
, (V)
NPN SILICON TRANSISTOR
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
V
CE
=2V
10
5
3
1
0.5
0.3
0.1
0.05
0.03
V
CE (SAT)
V
BE (SAT)
I
C
=20I
B
100
50
30
10
5
3
1
0.01 0.03 0.05 0.1
0.3 0.5
1
3 5
10
0.01
0.030.05 0.1
0.3 0.5
1
3 5
10
Collector Current, I
C
(A)
Collector Current, I
C
(A)
Safe Operating Area
10
5
3
0.8
Power Derating
Collector Current, I
C
(A)
1
0.5
0.3
0.1
0.05
0.03
0.01
1
3
5
D
C
20
0m
s
Power Dissipation, P
D
(W)
pw=1ms
10ms
0.6
0.4
2SD1616A
2SD1616
0.2
10
30 50
100
300
0
25
50
75
100 125 150 175 200
Collector-Emitter Voltage, V
CE
(V)
Ambient Temperature, Ta (℃)
U TC assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UT C products described or contained
herein. UT C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R201-008,C
嵌入式系统
