Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD2015
DESCRIPTION
・With
TO-220F package
・DARLINGTON
APPLICATIONS
・Driver
for solenoid
・Relay
and motor
・General
purpose
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
150
120
6
4
0.5
25
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=10mA ;I
B
=0
I
C
=2A ;I
B
=2mA
I
C
=2A ;I
B
=2mA
V
CB
=150V; I
E
=0
V
EB
=6V; I
C
=0
I
C
=2A ; V
CE
=2V
I
C
=0.1A ; V
CE
=12V
f=1MHz;V
CB
=10V
2000
40
40
MIN
120
TYP.
2SD2015
MAX
UNIT
V
1.5
2.0
10
10
V
V
μA
mA
MHz
pF
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=2.0A I
B1
=-I
B2
=10mA
V
CC
=40V ,R
L
=20Ω
0.6
5.0
2.0
μs
μs
μs
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD2015
Fig.2 Outline dimensions
JMnic
