2SD2088
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor)
2SD2088
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Unit: mm
·
·
·
High DC current gain: h
FE
= 2000 (min) (V
CE
= 2 V, I
C
= 1 A)
Low saturation voltage: V
CE (sat)
= 1.5 V (max) (I
C
= 1 A, I
B
= 1 mA)
Zener diode included between collector and base.
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
60 ± 10
60 ± 10
8
2
0.5
0.9
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
TO-92MOD
―
2-5J1A
Weight: 0.36 g (typ.)
Equivalent Circuit
COLLECTOR
BASE
≈
4 kΩ
≈
800
Ω
EMITTER
1
2003-02-04
2SD2088
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Unclamped inductive load energy
Turn-on time
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE
V
CE (sat)
V
BE (sat)
f
T
C
ob
E
S/B
t
on
I
B1
Test Condition
V
CB
= 45 V, I
E
= 0
V
EB
= 8 V, I
C
= 0
I
C
= 10 mA, I
B
= 0
V
CE
= 2 V, I
C
= 1 A
I
C
= 1 A, I
B
= 1 mA
I
C
= 1 A, I
B
= 1 mA
V
CE
= 2 V, I
C
= 0.5 A
V
CB
= 10 V, I
E
= 0, f = 1 MHz
L = 10 mH, I
C
= 1.3 A, I
B
= ±50 mA
Output
30
Ω
Min
―
―
50
2000
―
―
―
―
8.4
―
Typ.
―
―
60
―
―
―
100
20
―
0.4
Max
10
4
70
―
1.5
2.0
―
―
―
―
V
V
MHz
pF
mJ
Unit
µA
mA
V
20 µs
Input
I
B2
I
B1
I
B2
Switching time
Storage time
t
stg
―
4.0
―
µs
V
CC
= 30 V
Fall time
t
f
I
B1
=
−I
B2
= 1 mA, duty cycle
≤
1%
―
0.6
―
Marking
D2088
Product No.
Lot No.
Explanation of Lot No.
Month of manufacture (January to December are denoted by letters A to L respectively.)
Year of manufacture (Last decimal digit of the year of manufacture)
2
2003-02-04
2SD2088
I
C
– V
CE
2.0
500
250
10000
200
Common emitter
185
Ta = 25°C
5000
3000
Common emitter
VCE = 2 V
h
FE
– I
C
(A)
1.6
h
FE
I
C
Collector current
DC current gain
1.2
180
Ta = 100°C
1000
500
300
25
100
−55
175
0.8
IB = 170 µA
PC = 0.9 W
0.4
50
0
0
2
4
6
8
10
30
0.01
0.03
0.1
0.3
1
3
5
Collector-emitter voltage
V
CE
(V)
Collector current
I
C
(A)
Collector-emitter saturation voltage
V
CE (sat)
(V)
V
CE (sat)
– I
C
3
Common emitter
IC/IB = 1000
2.0
I
C
– V
BE
Common emitter
VCE = 2 V
1.6
I
C
1
25
0.6
100
0.3
1
3
(A)
Collector current
Ta =
−55°C
1.2
Ta = 100°C
0.8
25
0.4
−55
Collector current
I
C
(A)
0
0
0.8
1.6
2.4
3.2
4.0
Base-emitter voltage V
BE
(V)
P
C
– Ta
2.0
Collector power dissipation P
C
V
BE (sat)
– I
C
Base-emitter saturation voltage
V
BE (sat)
(V)
5
Common emitter
IC/IB = 1000
(W)
1.5
1.0
0.5
3
Ta =
−55°C
25
100
1
0.3
0.5
1
3
0
0
40
80
120
160
200
Collector current
I
C
(A)
Ambient temperature Ta (°C)
3
2003-02-04
2SD2088
Safe Operating Area
5
3
IC max (pulsed)*
IC max (continuous)
10 ms*
100 µs*
(A)
1
0.5
0.3
DC operation
Ta = 25°C
1 ms*
Collector current
I
C
0.1
Ta = 25°C
0.03 Curves must be derated
linearly with increase in
temperature.
0.01
0.1
0.3
1
3
0.05
*: Single nonrepetitive pulse
VCEO max
10
30 50
100
Collector-emitter voltage V
CE
(V)
4
2003-02-04
2SD2088
RESTRICTIONS ON PRODUCT USE
000707EAA
·
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
·
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
·
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
·
The information contained herein is subject to change without notice.
5
2003-02-04
