SMD Type
General Purpose Transistor
2SD2226K
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
Features
+0.1
2.4
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
Low saturation voltage.
0.55
High emitter-base voltage.
+0.1
1.3
-0.1
High DC current gain.
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse Pw=100ms.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Rating
60
50
12
0.15
0.2 *
0.2
150
-55 to +150
W
Unit
V
V
V
A
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage *
DC current transfer ratio *
Output capacitance *
Transition frequency
* Measured using pulse current.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
C
=10ìA
I
C
=1mA
I
E
=10ìA
V
CB
=50V
V
EB
=12V
Testconditons
Min
60
50
12
0.3
0.3
0.3
820
250
3.5
2700
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
V
CE(sat)
I
C
/I
B
=50mA/5mA
h
FE
f
T
C
ob
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
E
= -10mA, f=100MHz
V
CB
=5V, I
E
=0, f=1MHz
h
FE
Classification
Marking
Rank
h
FE
V
820 1800
BJ
W
1200 2700
0-0.1
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