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2SD468-X-T9N-K

SMALL SIGNAL TRANSISTOR
小信号晶体管

器件类别:半导体    分立半导体   

厂商名称:UNISONIC TECHNOLOGIES CO.,LTD

厂商官网:http://www.unisonic.com.tw/

下载文档
器件参数
参数名称
属性值
最大集电极电流
1 A
端子数量
3
加工封装描述
TO-92MOD, 3 PIN
状态
Transferred
结构
Single
最小直流放大倍数
85
jesd_30_code
O-PBCY-T3
包装材料
PLASTIC/EPOXY
包装形状
ROUND
包装尺寸
CYLINDRICAL
larity_channel_type
NPN
wer_dissipation_max__abs_
0.9000 W
qualification_status
COMMERCIAL
sub_category
Other Transistors
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
BOTTOM
文档预览
UNISONIC TECHNOLOGIES CO., LTD
2SD468
LOW FREQUENCY POWER
AMPLIFIER
FEATURES
* Low frequency power amplifier
* Complement to 2SB562
NPN SILICON TRANSISTOR
1
TO-92
1
TO-92NL
*Pb-free plating product number: 2SD468L
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
2SD468-x-T92-B
2SD468L-x-T92-B
2SD468-x-T92-K
2SD468L-x-T92-K
2SD468-x-T9N-B
2SD468L-x-T9N-B
2SD468-x-T9N-K
2SD468L-x-T9N-K
Package
TO-92
TO-92
TO-92NL
TO-92NL
Pin Assignment
1
2
3
E
C
B
E
C
B
E
C
B
E
C
B
Packing
Tape Box
Bulk
Tape Box
Bulk
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 4
QW-R211-003.B
2SD468
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
25
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
1
A
Collector Peak Current
I
CP
1.5
A
Collector Power Dissipation
P
C
0.9
W
Junction Temperature
T
J
+150
Storage Temperature
T
STG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Gain Bandwidth Product
Collector Output Capacitance
Note: Pulse test
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE(SAT)
V
BE
f
T
C
ob
TEST CONDITIONS
Ic=10µA, I
E
=0
Ic=1mA, R
BE
=∞
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
CE
=2V, Ic=0.5A (Note)
Ic=0.8A, I
B
=0.08A (Note)
V
CE
=2V, Ic=0.5A (Note)
V
CE
=2V, Ic=0.5A (Note)
V
CB
=10V, I
E
=0, f=1MHz
MIN
25
20
5
85
0.2
0.79
190
22
TYP
MAX
UNIT
V
V
V
µA
V
V
MHz
pF
1
240
0.5
1
CLASSIFICATION OF h
FE
RANK
RANGE
B
85 - 170
C
120 - 240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R211-003.B
2SD468
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Collector Power Dissipation, P
C
(W)
.
=0
P
C
Collector Current, I
C
(A)
Typical Transfer Characteristics
1,000
DC Current Transfer Ratio, h
FE
V
CE
=2V
300
Collector current, I
C
(mA)
Ta=75℃
100
30
10
3
1
25℃
5,000
2,000
1,000
500
DC Current Transfer Ratio
vs. Collector Current
V
CE
=2V
9W
Ta=75℃
200
100
50
20
10
5
1
3
10
30 100 300 1,000
Collector Current, I
C
(mA)
25℃
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage, V
BE
(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R211-003.B
2SD468
TYPICAL CHARACTERISTICS(Cont.)
Collector Output Capacitance
vs. Collector to Base Voltage
200
100
50
f=1MHz
I
E
=0
NPN SILICON TRANSISTOR
20
10
5
2
5
10 20
50
Collector to Base Voltage, V
CB
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R211-003.B
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参数对比
与2SD468-X-T9N-K相近的元器件有:2SD468、2SD468-X-T92-K、2SD468L-X-T92-K、2SD468L-X-T9N-K、2SD468-X-T92-B、2SD468-X-T9N-B、2SD468L-X-T9N-B、2SD468_08、2SD468L-X-T92-B。描述及对比如下:
型号 2SD468-X-T9N-K 2SD468 2SD468-X-T92-K 2SD468L-X-T92-K 2SD468L-X-T9N-K 2SD468-X-T92-B 2SD468-X-T9N-B 2SD468L-X-T9N-B 2SD468_08 2SD468L-X-T92-B
描述 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR
最大集电极电流 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
端子数量 3 3 3 3 3 3 3 3 3 3
加工封装描述 TO-92MOD, 3 PIN TO-92MOD, 3 PIN TO-92MOD, 3 PIN TO-92MOD, 3 PIN TO-92MOD, 3 PIN TO-92MOD, 3 PIN TO-92MOD, 3 PIN TO-92MOD, 3 PIN TO-92MOD, 3 PIN TO-92MOD, 3 PIN
状态 Transferred Transferred Transferred Transferred Transferred Transferred Transferred Transferred Transferred Transferred
结构 Single Single Single Single Single Single Single Single Single Single
最小直流放大倍数 85 85 85 85 85 85 85 85 85 85
jesd_30_code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
包装材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
包装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
包装尺寸 CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
larity_channel_type NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN
wer_dissipation_max__abs_ 0.9000 W 0.9000 W 0.9000 W 0.9000 W 0.9000 W 0.9000 W 0.9000 W 0.9000 W 0.9000 W 0.9000 W
qualification_status COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
sub_category Other Transistors Other Transistors Other Transistors Other Transistors Other Transistors Other Transistors Other Transistors Other Transistors Other Transistors Other Transistors
表面贴装 NO NO NO NO NO NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
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