Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD748 2SD748A
DESCRIPTION
·With
TO-3 package
·High
V
CBO
·High
power dissipation
APPLICATIONS
·Low
frequency power amplifier regulator
for TV power supply applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2SD748
V
CEO
Collector-emitter voltage
2SD748A
V
EBO
I
C
I
B
B
CONDITIONS
Open emitter
VALUE
250
200
UNIT
V
Open base
250
Open collector
5
3
1
T
C
=25℃
80
150
-45~150
V
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
V
A
A
W
℃
℃
P
C
T
j
T
stg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SD748
V
(BR)CEO
Collector-emitter
breakdown voltage
2SD748A
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
I
E
=5mA ;I
C
=0
I
C
=3A; I
B
=0.6A
I
C
=1A ; V
CE
=5V
V
CB
=200V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=10mA ;R
BE
=∞
CONDITIONS
2SD748 2SD748A
MIN
200
TYP.
MAX
UNIT
V
250
5
1.0
1.5
1.0
1.0
25
200
V
V
V
mA
mA
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD748 2SD748A
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
