Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD799
DESCRIPTION
・With
TO-220 package
・High
DC current gain
・DARLINGTON
APPLICATIONS
・Igniter
applications
・High
voltage switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
600
400
5
6
1
30
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SD799
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=10mA ; I
B
=0
400
V
V
CEsat
V
BEsat
Collector-emitter saturation voltage
I
C
=4A ;I
B
=0.04A
I
C
=4A; I
B
=0.04A
2.0
V
Emitter-base saturation voltage
2.5
V
I
CBO
Collector cut-off current
V
CB
=600V; I
E
=0
0.5
mA
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
3.0
mA
h
FE-1
DC current gain
I
C
=2A ; V
CE
=2V
600
h
FE-2
DC current gain
I
C
=4A ; V
CE
=2V
100
V
ECF
C
OB
Diode forward voltage
I
E
=4A; I
B
=0
f=1MHz;V
CB
=50V
35
3.0
V
Collector output capacitance
pF
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD799
Fig.2 Outline dimensions
JMnic
