SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD821
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·For color TV horizontal output applications
PINNING(see fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
1500
600
5
6
-6
50
150
-65~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
TYP.
2SD821
SYMBOL
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=0.1A; I
B
=0
600
V
V
CEsat
Collector-emitter saturation voltage
I
C
=5 A;I
B
=1 A
3.0
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=5 A;I
B
=1 A
1.5
V
I
CBO
Collector cut-off current
V
CB
=500V;I
E
=0
10
µA
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
1
mA
h
FE
DC current gain
I
C
=1A ; V
CE
=5V
8
20
C
OB
Output capacitance
I
E
=0; V
CB
=10V;f=1MHz
165
pF
f
T
Transition frequency
I
C
=0.1A ; V
CE
=10V
3
MHz
t
f
Fall time
I
CP
=5A ;I
B1
=1A
0.5
1.0
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD821
Fig.2 Outline dimensions
3
