SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD850
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Line-operated horizontal deflection
output applications
PINNING(see fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=90
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
700
5
3
5
25
150
-65~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown votage
Collector-emitter saturation voltage
Base-emitter saturation voltage
CONDITIONS
I
C
=0.1A; I
B
=0
I
E
=10mA; I
C
=0
I
C
=2.5 A;I
B
=0.8A
I
C
=2.5 A;I
B
=0.8A
V
CB
=750V;I
E
=0
I
CBO
Collector cut-off current
V
CB
=1500V;I
E
=0
h
FE-1
h
FE-2
t
f
t
s
DC current gain
DC current gain
Fall time
I
C
=2.5A;I
B
end
=0.8A;L
B
=5µH
Storage time
13
I
C
=0.5A ; V
CE
=5V
I
C
=2.5A ; V
CE
=10V
8
4
MIN
600
5
TYP.
2SD850
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
MAX
UNIT
V
V
4.0
1.5
50
1.0
V
V
µA
mA
15
1.0
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD850
Fig.2 Outline dimensions
3
