SMD Type
NPN Transistors
2SD874
Transistors
■
Features
●
Low Collector-Emitter Saturation Voltage
●
Large Collector Power Dissipation
●
Mini Power Type Package
●
Complimentary to 2SB766
0.42 0.1
1.70
0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Thermal Resistance From Junction To Ambient
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
R
θJA
P
C
T
J
T
stg
Rating
30
25
5
1
250
500
150
-55 to 150
A
℃/W
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE(1)
h
FE(2)
C
ob
f
T
Test Conditions
Ic= 100 μA， I
E
= 0
Ic= 1 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 20 V , I
E
= 0
V
EB
= 4V , I
C
=0
I
C
=500 mA, I
B
=50mA
I
C
=500 mA, I
B
=50mA
V
CE
= 10V, I
C
= 500mA
V
CE
= 5V, I
C
= 1A
V
CB
= 10V, I
E
= 0,f=1MHz
V
CE
= 10V, I
C
= 50mA,f=200MHz
200
85
50
20
pF
MHz
Min
30
25
5
100
100
0.4
1.2
340
nA
V
V
Typ
Max
Unit
■
Classification of h
fe(1)
Type
Range
Marking
2SD874-Q
85-170
ZQ
2SD874-R
120-240
ZR
2SD874-S
170-340
ZS
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