UNISONIC TECHNOLOGIES CO., LTD
2SD965/A
LOW VOLTAGE HIGH
CURRENT TRANSISTOR
FEATURES
* Collector current up to 5A
* UTC
2SD965:
Collector-Emitter voltage up to 20 V
* UTC
2SD965A:
Collector-Emitter voltage up to 30 V
NPN SILICON TRANSISTOR
1
SOT-89
1
TO-252
APPLICATIONS
* Audio amplifier
* Flash unit of camera
* Switching circuit
1
TO-92
*Pb-free plating product number:
2SD965L/2SD965AL
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SD965-x-AB3-R
2SD965L-x-AB3-R
2SD965-x-T92-B
2SD965L-x-T92-B
2SD965-x-T92-K
2SD965L-x-T92-K
2SD965-x-TN3-R
2SD965L-x-TN3-R
2SD965-x-TN3-T
2SD965L-x-TN3-T
2SD965A-x-AB3-R
2SD965AL-x-AB3-R
2SD965A-x-T92-B
2SD965AL-x-T92-B
2SD965A-x-T92-K
2SD965AL-x-T92-K
2SD965A-x-TN3-R
2SD965AL-x-TN3-R
2SD965A-x-TN3-T
2SD965AL-x-TN3-T
Package
SOT-89
TO-92
TO-92
TO-252
TO-252
SOT-89
TO-92
TO-92
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
E
C
B
E
C
B
B
C
E
B
C
E
B
C
E
E
C
B
E
C
B
B
C
E
B
C
E
Packing
Tape Reel
Tape Box
Bulk
Tape Reel
Tube
Tape Reel
Tape Box
Bulk
Tape Reel
Tube
2SD965L-x-AB3-R
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube
(2) AB3: SOT-89, T92: TO-92, TN3: TO-252
(3) x: refer to Classification of h
FE2
(4) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R209-007,B
2SD965/A
ABSOLUTE MAXIMUM RATING
(Ta=25
℃
)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation
Collector Current
SOT-89
TO-92
TO-252
2SD965
2SD965A
SYMBOL
V
CBO
V
CEO
V
EBO
P
C
I
C
NPN SILICON TRANSISTOR
RATINGS
40
20
30
7
500
750
1
5
UNIT
V
V
V
V
mW
mW
W
A
Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-65 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25
℃
, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BV
CBO
I
C
=100
µ
A, I
E
=0
Collector-Emitter
2SD965
BV
CEO
I
C
=1mA, I
B
=0
Breakdown Voltage
2SD965A
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=10
µ
A, I
C
=0
Collector Cut-off Current
I
CBO
V
CB
=10V, I
E
=0
Emitter Cut-off Current
I
EBO
V
EB
=7V, I
C
=0
V
CE
=2V, I
C
=1mA
DC Current Gain(note)
h
FE
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=2A
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=3A, I
B
= 0.1A
Current Gain Bandwidth Product
f
T
V
CE
=6V, I
C
=50mA
Output Capacitance
C
ob
V
CB
=20V, I
E
=0, f=1MHz
MIN
40
20
30
7
TYP
MAX
UNIT
V
V
V
V
nA
nA
100
100
200
230
150
150
50
800
1
V
MHz
pF
CLASSIFICATION OF h
FE2
RANK
RANGE
Q
230-380
R
340-600
S
560-800
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QW-R209-007,B
2SD965/A
TYPICAL CHARACTERISTICS
Static Characteristics
3.0
I
B
=3.0mA
I
B
=2.5mA
I
B
=2.0mA
2.0
1.5
I
B
=1.5mA
I
B
=1.0mA
I
B
=0.5mA
1.0
0
10
3
NPN SILICON TRANSISTOR
DC Current Gain
Collector Current, I
C
(A)
DC Current Gain, h
FE
2.5
10
2
V
CE
=2V
1
10
0
0.4
0.8
1.2
1.6
2.0
10
10
-1
0
10
1
10
2
10
3
10
4
Collector-Emitter Voltage ( V)
Collector Current, I
C
(mA)
Base-Emitter on Voltage
6 V =2V
CE
Collector Current, I
C
(A)
Saturation Voltage
10
Saturation Voltage (mV)
4
25℃
Ta=75℃
-25℃
I
C
=30·I
B
5
4
3
2
1
0
0
0.4
10
3
V
BE(SAT)
V
CE(SAT)
10
2
0.8
1.2
1.6
2.0
10
1 0
10
Base to Emitter Voltage, V
BE
(V)
10
3
Collector Current, I
C
(mA)
10
1
10
2
10
4
Current Gain-Bandwidth Product
Current Gain-Bandwidth Product,
f
T
(MHz)
Collector Output Capacitance
10
3
10
3
V
CE
=6V
10
2
Capacitance, C
ob
(pF)
f=1MHz
I
E
=0
10
2
10
1
10
1
10
0
10
0
10
1
10
2
10
3
10
0 -1
10
10
0
10
1
10
2
Collector Current, I
C
(mA)
Collector-Base Voltage (V)
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QW-R209-007,B
2SD965/A
TYPICAL CHARACTERISTICS
Safe Operation Area
100
Collector Current, I
C
(A)
NPN SILICON TRANSISTOR
10
Icp
I
C
Single pulse
Ta =25℃
t=10ms
t=1s
1
0.1
0.01
0.1
1
10
100
Collector-Emitter Voltage, V
CE
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-007,B
