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April 1
st
, 2010
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ624
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SJ624 is a switching device which can be driven directly
by a 1.8 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.4
+0.1
–0.05
0.65
–0.15
+0.1
0.16
+0.1
–0.06
2.8 ±0.2
3
1.5
FEATURES
•
1.8 V drive available
•
Low on-state resistance
R
DS(on)1
= 54 mΩ MAX. (V
GS
= –4.5 V, I
D
= –2.5 A)
R
DS(on)2
= 71 mΩ MAX. (V
GS
= –2.5 V, I
D
= –2.5 A)
R
DS(on)3
= 108 mΩ MAX. (V
GS
= –1.8 V, I
D
= –1.5 A)
0 to 0.1
1
2
0.95
0.95
0.65
0.9 to 1.1
1.9
2.9 ±0.2
1 : Gate
2 : Source
3 : Drain
ORDERING INFORMATION
PART NUMBER
2SJ624
PACKAGE
SC-96 (Mini Mold Thin Type)
Marking: XH
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
EQUIVALENT CIRCUIT
–20
m8.0
m4.5
m18
0.2
1.25
150
–55 to +150
V
V
A
A
W
W
°C
°C
Gate
Protection
Diode
Gate
Body
Diode
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 board, t
≤
5 sec.
Note2
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15890EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
©
2002
2SJ624
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
V
DD
= –16 V
V
GS
= –4.0 V
I
D
= –4.5 A
I
F
= 4.5 A, V
GS
= 0 V
TEST CONDITIONS
V
DS
= –20 V, V
GS
= 0 V
V
GS
=
m
8.0 V, V
DS
= 0 V
V
DS
= –10 V, I
D
= –1.0 mA
V
DS
= –10 V, I
D
= –2.5 A
V
GS
= –4.5 V, I
D
= –2.5 A
V
GS
= –2.5 V, I
D
= –2.5 A
V
GS
= –1.8 V, I
D
= –1.5 A
V
DS
= –10 V
V
GS
= 0 V
f = 1.0 MHz
V
DD
= –10 V, I
D
= –2.5 A
V
GS
= –4.0 V
R
G
= 10
Ω
–0.45
5.0
–0.75
9.5
43
53
65
813
165
69
14
42
80
92
8.1
1.3
2.8
0.90
54
71
108
MIN.
TYP.
MAX.
–10
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
m
10
–1.5
TEST CIRCUIT 1 SWITCHING TIME
V
GS (−)
D.U.T.
R
L
PG.
R
G
V
DD
V
DS
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
I
G
=
−2
mA
50
Ω
R
L
V
DD
V
GS
Wave Form
0
10%
V
GS
90%
V
DS (−)
90%
90%
10%
10%
PG.
V
DS
V
GS (−)
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet D15890EJ1V0DS
2SJ624
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1.5
P
T
- Total Power Dissipation - W
dT - Percentage of Rated Power - %
100
80
60
40
20
0
0
25
50
75
100
125
150
175
1.25
1
0.75
0.5
0.25
0
0
25
50
75
100
125
150
175
Mounted on FR-4 board of
2
50 cm x 1.1 mm
T
A
- Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
T
A
- Ambient Temperature -
°C
-100
R
DS(on)
Limited
(V
GS
=
−4.5
V) I
D(pulse)
I
D
- Drain Current - A
-10
PW = 1 ms
I
D(DC)
-1
10 ms
100 ms
-0.1
Single Pulse
Mounted on FR-4 board of
2
50 cm x 1.1 mm
-1
-10
5s
-0.01
-0.1
-100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(ch-A)
- Transient Thermal Resistance -
°C/W
Single Pulse
Without board
100
Mounted on FR-4 board of
50 cm
2
x 1.1 mm
10
1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D15890EJ1V0DS
3
单片机
