Silicon Junction FETs (Small Signal)
2SK2380
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For infrared sensor
0.28
±0.05
0.80
±0.05
unit: mm
M
ain
Di
sc te
on na
tin nc
ue e/
d
I
Features
G
Low gate to source leakage current, I
GSS
G
Small capacitance of C
iss
, C
oss
, C
rss
G
SS-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
3
1 2
(0.51)
(0.80) (0.80)
1.60
+0.05
– 0.03
0.12
+0.05
– 0.02
(0.44)
3°
(0.44)
1.60
±0.05
I
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Symbol
Gate to Drain voltage
V
GDO
V
GSO
I
D
I
G
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
P
D
T
ch
T
stg
I
Electrical Characteristics
(Ta = 25°C)
Parameter
Symbol
tin
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
I
DSS*
I
GSS
V
DS
V
DS
= 10V, V
GS
= 0
on
V
GS
=
−20V,
V
DS
= 0
I
G
=
−10µA,
V
DS
= 0
V
DS
= 10V, I
D
= 1µA
Output capacitance (Common Source)
Ma
int
en
Input capacitance (Common Source) C
iss
C
oss
Reverse transfer capacitance (Common Source) C
rss
an
Forward transfer admittance
ce
Gate to Source cut-off voltage
V
GSC
| Y
fs
|
V
DS
= 10V, V
GS
= 0, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
*
I
DSS
rank classification
Runk
I
DSS
(mA)
Q
50 to 100
EBQ
R
70 to 130
EBR
S
100 to 200
EBS
Marking Symbol
262
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0.28
±0.05
(0.51)
0.60
+0.05
– 0.03
3°
(0.80)
Ratings
−40
−40
±1
10
Unit
V
V
0 to 0.1
mA
mA
125
125
mW
°C
°C
1: Source
2: Drain
3: Gate
EIAJ: SC-89
SSMini3-F2 Package
Marking Symbol (Example): EB
−55
to +125
ue
Conditions
min
50
typ
max
200
(0.15)
−
0.5
−3
isc
−40
(0.375)
0.88
+0.05
– 0.03
Unit
µA
nA
V
V
/D
−1.3
1
0.05
mS
pF
pF
pF
0.4
0.4
Silicon Junction FETs (Small Signal)
P
D
Ta
150
240
Ta=25˚C
125
200
200
V
GS
=0.4V
2SK2380
I
D
V
DS
240
V
DS
=10V
I
D
V
GS
Allowable power dissipation P
D
(mW)
Drain current I
D
(
µA
)
100
160
Drain current I
D
(
µA
)
160
75
120
0.2V
0V
120
M
ain
Di
sc te
on na
tin nc
ue e/
d
50
80
– 0.2V
– 0.4V
– 0.6V
80
25
40
40
0
0
0
20
40
60
80 100 120 140 160
0
2
4
6
8
10
12
0
–1.2
Ta=75˚C
–25˚C
25˚C
Ambient temperature Ta (˚C)
| Y
fs
|
V
GS
Forward transfer admittance |Y
fs
| (mS)
Forward transfer admittance |Y
fs
| (mS)
1.0
V
DS
=10V
f=1kHz
Ta=25˚C
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) C
iss
,C
oss
,C
rss
(pF)
1.2
0.8
0.6
0.4
I
DSS
=100µA
0.2
0
–1.2
– 0.8
– 0.4
0
0.4
Gate to source voltage V
GS
(V)
d
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– 0.8
– 0.4
0
0.4
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
| Y
fs
|
I
D
C
iss
, C
oss
, C
rss
V
DS
240
1.2
V
DS
=10V
Ta=25˚C
200
1.0
V
GS
=0V
Ta=25˚C
f=1MHz
160
0.8
C
iss
120
I
DSS
=100µA
0.6
80
0.4
C
rss
C
oss
40
0.2
0
0
0
40
80
120
160
200
240
0
2
4
6
8
10
12
ue
Drain current I
D
(
µA
)
Drain to source voltage V
DS
(V)
Ma
int
en
an
ce
/D
isc
on
tin
263
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semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
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–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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cy
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.jp rm
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/en at
/ ion
.
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int
en
an
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M
ain
Di
sc te
on na
tin nc
ue e/
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/D
isc
on
tin
ue
di
