2SK2897-01MR
FAP-IIIB Series
> Features
-
-
-
-
-
High Current
Low On-Resistance
No Secondary Breakdown
Low Driving Power
Avalanche Rated
N-channel MOS-FET
60V
0,02Ω
±45A
40W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
I
D
I
D(puls)
V
GS
E
AV
P
D
T
ch
T
stg
Rating
60
±45
±185
±20
461.9
40
150
-55 ~ +150
L=0.304mH,Vcc=24V
Unit
V
A
A
V
mJ*
W
°C
°C
- Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BV
DSS
V
GS(th)
I
DSS
I
R
g
C
C
C
t
t
t
t
I
V
t
Q
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
Test conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS=
V
GS
V
DS
=60V
T
ch
=25°C
T
ch
=125°C
V
GS
=0V
V
GS
=±20V
V
DS
=0V
I
D
=22,5A
V
GS
=4V
V
GS
=10V
I
D
=22,5A
I
D
=22,5A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=30V
V
GS
=10V
I
D
=45A
R
GS
=10
Ω
T
ch
=25°C
L = 100µH
I
F
=45A V
GS
=0V T
ch
=25°C
I
F
=45A V
GS
=0V
-dI/dt=100A/µs T
ch
=25°C
Min.
60
1,0
Typ.
1,5
10
0,2
10
15
Max.
2,0
500
1,0
100
20
10
15
35
2900
930
260
13
35
190
75
0,95
55
0,10
12
4350
1400
390
30
50
290
140
1,43
45
Unit
V
V
µA
mA
nA
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
R
R
th(ch-c)
th(ch-a)
Symbol
channel to case
channel to ambient
Min.
Typ.
Max.
3,125
62,5
Unit
°C/W
°C/W
N-channel MOS-FET
60V
2SK2897-01MR
FAP-IIIB Series
Drain-Source On-State Resistance vs. T
ch
R
DS(on)
= f(T
ch
); I
D
=22,5A; V
GS
=10V
0,02Ω
±45A
40W
> Characteristics
Typical Output Characteristics
I
D
=f(V
DS
); 80µs pulse test; T
C
=25°C
Typical Transfer Characteristics
I
D
=f(V
GS
); 80µs pulse test; V
DS
=25V; T
ch
=25°C
↑
I
D
[A]
↑
1
R
DS(ON)
[m
Ω
]
↑
2
I
D
[A]
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source On-State-Resistance vs. I
D
R
DS(on)
=f(I
D
); 80µs pulse test; T
C
=25°C
Typical Forward Transconductance vs. I
D
g
fs
=f(I
D
); 80µs pulse test; V
DS
=25V; T
ch
=25°C
Gate Threshold Voltage vs. T
ch
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
↑
R
DS(ON)
[m
Ω
]
↑
g
fs
[S]
↑
5
V
GS(th)
[V]
4
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitances vs. V
DS
C=f(V
DS
); V
GS
=0V; f=1MHz
Typical Gate Charge Characteristic
V
GS
=f(Qg); I
D
=45A; T
C
=25°C
Forward Characteristics of Reverse Diode
I
F
=f(V
SD
); 80µs pulse test; T
ch
=25°C
↑
C [F]
↑
V
DS
[V]
↑
V
GS
[V]
↑
I
F
[A]
7
8
9
V
DS
[V]
→
Qg [nC]
→
V
SD
[V]
→
Maximum Avalanche Energy vs. starting T
ch
Eas=f(starting T
ch
): V
CC
=24V; I
AV
≤ 45A
Safe Operation Area
I
D
=f(V
DS
): D=0,01, Tc=25°C
Transient Thermal impedance
↑
E
AV
[mJ]
10
↑
I
D
[A]
12
↑
Z
th(ch-c)
[K/W]
Z
thch
=f(t) parameter:D=t/T
starting T
ch
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
N-channel MOS-FET
60V
0,02Ω
±45A
2SK2897-01MR
FAP-IIIB Series
Typical Switching Characteristics
t=f(I
D
): V
CC
= 30V, V
GS
= 10V, R
G
= 10Ω
40W
> Characteristics
t [ns]
V
SD
[V]
→
Power Dissipation
P
D
=f(T
C
)
125
100
P
D
/ P
Dmax
[%]
75
50
25
0
0
25
50
75
T
C
[°C]
100
125
150
Maximum Avalanche Current vs. starting T
ch
I
AV
=f(starting T
ch
)
120
100
I
AV
/ I
AVmax
[%]
80
60
40
20
0
0
25
50
75
starting T
ch
[°C]
100
125
150
This specification is subject to change without notice!
