DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3109
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3109 is N channel MOS FET device that
features a low on-state resistance and excellent
switching characteristics, and designed for high voltage
applications such as DC/DC converter.
ORDERING INFORMATION
PART NUMBER
2SK3109
2SK3109-S
2SK3109-ZJ
PACKAGE
TO-220AB
TO-262
TO-263
FEATURES
•
Gate voltage rating ±30 V
•
Low on-state resistance
R
DS(on)
= 0.4
Ω
MAX. (V
GS
= 10 V, I
D
= 5.0 A)
•
Low input capacitance
C
iss
= 400 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
•
Avalanche capability rated
•
Built-in gate protection diode
•
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to source voltage (V
GS
= 0 V)
Gate to source voltage (V
DS
= 0 V)
Drain current (DC) (T
C
= 25 °C)
Drain current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
200
±30
±10
±30
1.5
50
150
−55
to +150
10
35
V
V
A
A
W
W
°C
°C
A
mJ
Total power dissipation (T
A
= 25 °C)
Total power dissipation (T
C
= 25 °C)
Channel temperature
Storage temperature
Single avalanche current
Single avalanche energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2.
Starting T
ch
= 25 °C, V
DD
= 100 V, R
G
= 25
Ω,
V
GS
= 20 V→0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13332EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP (K)
Printed in Japan
The mark
5
shows major revised points.
©
1998, 2000
2SK3109
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
Characteristics
Drain Leakage Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
Test Conditions
V
DS
= 200 V, V
GS
= 0 V
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 5.0 A
V
GS
= 10 V, I
D
= 5.0 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 100 V
I
D
= 5.0 A
V
GS(on)
= 10 V
R
G
= 10
Ω
V
DD
= 160 V
V
GS
= 10 V
I
D
= 10 A
I
F
= 10 A, V
GS
= 0 V
I
F
= 10 A, V
GS
= 0 V
di/dt = 50 A/
µ
s
2.5
1.5
0.32
400
110
55
12
34
40
20
18
3.5
10
1.0
250
1.0
0.4
MIN.
TYP.
MAX.
100
±10
4.5
Unit
µ
A
µ
A
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
5
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
µ
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
50
Ω
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
L
PG.
R
G
V
DD
I
D
90 %
90 %
V
GS
V
GS
Wave Form
0
10 %
V
GS
(on)
90 %
I
AS
I
D
V
DD
I
D
I
D
Wave Form
0 10 %
10 %
τ
τ
= 1
µ
s
Duty Cycle
≤
1 %
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D13332EJ1V0DS00
2SK3109
5
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
35
Pulsed
30
I
D
- Drain Current - A
100
FORWARD TRANSFER CHARACTERISTICS
V
DS
= 10 V
Pulsed
V
GS
= 30 V
10
I
D
- Drain Current - A
25
20
V
GS
= 10 V
15
10
5
0
0
10
20
30
40
50
V
DS
- Drain to Source Voltage - V
1
T
ch
= 125
˚C
75
˚C
25
˚C
-25
˚C
0.1
0.01
0.001
0
4
8
12
16
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
| - Forward Transfer Admittance - S
V
GS(off)
- Gate to Source Cut-off Voltage - V
5.0
4.5
4.0
3.5
3.0
2.5
2.0
−50
V
DS
= 10 V
I
D
= 1 mA
10
T
ch
=
−25
˚C
25 ˚C
75 ˚C
125 ˚C
1
V
DS
= 10 V
Pulsed
0.1
0
50
100
150
0.01
0.01
0.1
1
I
D
- Drain Current - A
10
100
T
ch
- Channel Temperature - ˚C
R
DS(on)
- Drain to Source On-state Resistance -
Ω
R
DS(on)
- Drain to Source On-state Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.0
Pulsed
0.9
I
D
= 10 A
0.8
5A
2A
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
8
10
12
14
16
18
20
V
GS
- Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
V
GS
= 10 V
V
GS
= 30 V
Pulsed
100
1
10
I
D
- Drain Current - A
Data Sheet D13332EJ1V0DS00
3
2SK3109
R
DS (on)
- Drain to Source On-state Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.2
1.0
0.8
0.6
0.4
0.2
0
−50
V
GS
= 10 V
Pulsed
0
50
100
150
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
I
SD
- Diode Forward Current - A
10
V
GS
= 10 V
1
0V
I
D
= 10 A
I
D
= 5 A
0.1
0.0
0.5
1.0
1.5
2.0
V
SD
- Source to Drain Voltage - V
T
ch
- Channel Temperature -
˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
1000
SWITCHING CHARACTERISTICS
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
C
iss
, C
oss
, C
rss
- Capacitance - pF
t
r
1000
C
iss
100
C
oss
C
rss
1
10
100
1000
100
t
d(off)
t
f
10
t
d(on)
10
0.1
V
GS
= 0 V
f = 1 MHz
1
0.1
1
V
DD
= 100 V
V
GS
= 10 V
R
G
= 10
Ω
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
di/dt = 50 A/
µs
V
GS
= 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
200
16
V
DS
- Drain to Source Voltage - V
14
150
V
DD
= 160 V
100 V
40 V
12
V
GS
10
8
6
50
V
DS
I
D
= 10 A
0
0
5
10
15
Q
G
- Gate Charge - nC
4
2
0
20
100
100
10
1
0.1
1
10
100
I
D
- Drain Current - A
4
Data Sheet D13332EJ1V0DS00
V
GS
- Gate to Source Voltage - V
t
rr
- Reverse Recovery Time - ns
2SK3109
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
70
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
0
20
40
60
80
100 120 140 160
100
80
60
40
20
0
60
50
40
30
20
10
0
0
20
40
60
80
100 120 140 160
T
C
- Case Temperature - ˚C
T
C
- Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
I
D(DC)
I
D
- Drain Current - A
10
1
I
D(pulse)
P
ed
W
imit
=1
)
L
(on
0
µ
10
R
DS
0
µ
s
s
1m
Po
we
3m
s
r D
10
s
m
iss
ipa
s
tio
n
Lim
ite
d
0.1
T
C
= 25
˚C
Single Pulse
1
10
100
1000
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
r
th
(t) - Transient Thermal Resistance - ˚C/W
R
th(ch-A)
= 83.3
˚C/W
10
1
R
th(ch-C)
= 2.5
˚C/W
0.1
0.01
10µ
100µ
1m
10m
100m
1
10
Single Pulse
100
1000
PW - Pulse Width - s
Data Sheet D13332EJ1V0DS00
5
