SMD Type
N-Channel Enhancement Mode MOSFET
2SK3494
TO
-
263
+0.1
1.27
-0.1
MOSFET
Unit: mm
+0.1
1.27
-0.1
+0.2
4.57
-0.2
Features
Low on-resistance, low Qg
High avalanche resistance
+0.2
8.7
-0.2
+0.1
1.27
-0.1
0.1max
+0.1
0.81
-0.1
+0.2
5.28
-0.2
2.54
+0.2
-0.2
+0.1
5.08
-0.1
+0.2
2.54
-0.2
+0.2
15.25
-0.2
2.54
+0.2
0.4
-0.2
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
T
C
=25
T
A
=25
Channel temperature
Storage temperature
* PW
10 s,Duty Cycle 1%
T
ch
T
stg
Symbol
V
DSS
V
GSS
I
D
I
dp
*
P
D
Rating
250
30
20
80
50
1.4
150
-55 to +150
Unit
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
I
DSS
I
GSS
V
th
Y
fs
R
DS(on)
C
iss
C
oss
C
rss
t
on
t
r
t
off
tf
Q
G
Q
GS
Q
GD
I
D
=10A, V
DD
=100V, V
GS
= 10 V
I
D
=10A,V
GS(on)
=10V,R
L
=10
,V
DD
=100V
V
DS
=25V,V
GS
=0,f=1MHZ
Testconditons
V
DS
=200V,V
GS
=0
V
GS
= 30V,V
DS
=0
V
DS
=10V,I
D
=1mA
V
DS
=10V,I
D
=10A
V
GS
=10V,I
D
=10A
2.0
7
14
82
2450
356
40
36
20
184
29
41
8.4
14
105
Min
Typ
Max
10
1
4.0
Unit
A
A
V
S
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
5.60
1 Gate
2 Drain
3 Source
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