2SK3923-01
Features
High speed switching
No secondary breadown
Avalanche-proof
FUJI POWER MOSFET
200509
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Non-repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Peak diode recovery -di/dt
Maximum power dissipation
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
I
AR
E
AS
dV
DS
/dt
dV/dt
-di/dt
P
D
Ratings
250
220
14
±56
±30
14
301.1
10.5
20
5
100
2.02
105
+150
Unit
V
V
A
A
V
A
mJ
mJ
kV/μs
kV/μs
A/μs
W
W
°C
°C
Remarks
VGS=-30V
Note *1
Note *2
Note *3
VDS < 250V
=
Note *4
Note *5
Ta=25°C
Tc=25°C
Gate(G)
Source(S)
Equivalent circuit schematic
Drain(D)
Operating and storage
T
ch
temperature range
T
stg
-55 to +150
Note *1 Tch< 150°C
=
Note *2 Starting Tch=25°C, I
AS
=6A, L=14.1mH, V
CC
=48V, R
G
=50Ω
E
AS
limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note *4 I
F
< -I
D
, -di/dt=100A/μs, Vcc < BV
DSS
, Tch < 150°C
=
=
=
Note *5 I
F
< -I
D
, dv/dt=5kV/μs, Vcc < BV
DSS
, Tch <150°C
=
=
=
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250
μ
A
V
GS
=0V
I
D
= 250
μ
A
V
DS
=V
GS
V
DS
=250V V
GS
=0V
V
DS
=200V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=7A V
GS
=10V
I
D
=7A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=7A
V
GS
=10V
R
GS
=10
Ω
V
CC
=125V
I
D
=14A
V
GS
=10V
I
F
=14A V
GS
=0V T
ch
=25°C
I
F
=14A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
T
ch
=25°C
T
ch
=125°C
220
10
780
90
6
12
3
23
6
22
7.0
6.0
1.00
120
0.5
Min.
250
3.0
Typ.
Max.
5.0
25
2.0
100
280
1170
135
9
18
4.5
35
9
33
11
9.0
1.50
250
1.25
Units
V
V
μA
mA
nA
mΩ
S
pF
5
ns
nC
V
ns
μC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
1.191
62.0
Units
°C/W
°C/W
http://www.fujielectric.co.jp/fdt/scd/
1
2SK3923-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
FUJI POWER MOSFET
120
35
Typical Output Characteristics
ID=f(VDS):80
μ
s pulse test,Tch=25
°
C
20V
10V
100
30
25
80
8V
PD [W]
60
ID [A]
20
15
7V
40
10
6.5V
20
5
VGS=6V
0
0
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
Tc [
°
C]
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80
μ
s pulse test,VDS=25V,Tch=25
°
C
100
Typical Transconductance
gfs=f(ID):80
μ
s pulse test,VDS=25V,Tch=25
°
C
10
10
ID[A]
1
gfs [S]
1
0.1
0.1
0.1
0.01
0
1
2
3
4
5
6
7
8
9
10
1
10
100
VGS[V]
ID [A]
1.0
0.9
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
μ
s pulse test,Tch=25
°
C
VGS=6.5V
7.0V
7.5V
8V
0.8
0.7
0.6
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=7A,VGS=10V
0.8
0.7
0.6
0.5
0.4
0.3
RDS(on) [
Ω
]
RDS(on) [
Ω
]
0.5
0.4
0.3
0.2
max.
10V
20V
typ.
0.2
0.1
0.0
0.1
0.0
0
5
10
15
20
25
30
35
-50
-25
0
25
50
75
100
125
150
ID [A]
Tch [
°
C]
2
2SK3923-01
FUJI POWER MOSFET
7
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250uA
24
Typical Gate Charge Characteristics
VGS=f(Qg):ID=14A,Tch=25
°
C
6
20
max.
Vcc= 50V
250V
200V
VGS(th) [V]
5
16
4
VGS [V]
12
3
min.
8
2
1
4
0
0
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
Tch [
°
C]
Qg [nC]
10n
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
100
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
μ
s pulse test,Tch=25
°
C
1n
Ciss
10
C [F]
100p
Coss
IF [A]
1
Crss
10p
1p
-1
10
10
0
10
1
10
2
10
3
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDS [V]
VSD [V]
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10
Ω
350
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=14A
300
I
AS
=5.6A
tf
10
2
250
EAV [mJ]
t [ns]
td(off)
200
I
AS
=8.4A
150
I
AS
=14A
td(on)
10
1
100
tr
50
10
0
0
-1
10
10
0
10
1
10
2
0
25
50
75
100
125
150
ID [A]
starting Tch [
°
C]
3
2SK3923-01
FUJI POWER MOSFET
10
2
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25
°
C,Vcc=48V
Avalanche Current I
AV
[A]
Single Pulse
10
1
10
0
10
-1
10
-8
10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
t
AV
[sec]
10
1
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [
°
C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/fdt/scd/
4
