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3.0SMCJ26A

3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

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器件参数
参数名称
属性值
厂商名称
Taiwan Semiconductor
Reach Compliance Code
compli
Base Number Matches
1
文档预览
3.0SMCJ SERIES
Surface Mount Transient Voltage Suppressor
Voltage Range
5.0 to 170 Volts
3000 Watts Peak Power
Features
For surface mounted application
Low profile package
Built-in strain relief
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than 1.0ps from 0 volt to
BV min.
Typical I
R
less than 1μA above 10V
High temperature soldering guaranteed:
260
O
C / 10 seconds at terminals
Plastic material used carries Underwriters Laboratory
Flammability Classification 94V-0
3000 watts peak pulse power capability with a 10 X 1000 us
waveform by 0.01% duty cycle
.129(3.27)
.118(3.0)
SMC/DO-214AB
.245(6.22)
.220(5.59)
.280(7.11)
.260(6.60)
.012(.31)
.006(.15)
.103(2.62)
.079(2.00)
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Standard packaging: 16mm tape (EIA STD RS-481)
Weight: 0.21gram
.060(1.52)
.030(0.76)
.320(8.13)
.305(7.75)
.008(.20)
.004(.10)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Type Number
Peak Power Dissipation at T
A
=25 C, Tp=1ms
(Note 1)
Steady State Power Dissipation
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method) (Note 2, 3) - Unidirectional Only
Maximum Instantaneous Forward Voltage at
100.0A for Unidirectional Only (Note 4)
Operating and Storage Temperature Range
O
Symbol
P
PK
Pd
I
FSM
V
F
T
J
, T
STG
Value
Minimum 3000
5
200
3.5 / 5.0
-55 to + 150
O
Units
Watts
Watts
Amps
Volts
O
C
Notes: 1. Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25 C Per Fig. 2.
2. Mounted on 8.0mm
2
(.013mm Thick) Copper Pads to Each Terminal.
3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minute
Maximum.
4. V
F
=3.5V on 3.0SMCJ5.0 thru 3.0SMCJ90 Devices and V
F
=5.0V on 3.0SMCJ100 thru
3.0SMCJ170 Devices.
Devices for Bipolar Applications
1. For Bidrectional Use C or CA Suffix for Types 3.0SMCJ5.0 through Types 3.0SMCJ170.
2. Electrical Characteristics Apply in Both Directions.
- 612 -
RATINGS AND CHARACTERISTIC CURVES (3.0SMCJ SERIES)
FIG.1- PEAK PULSE POWER RATING CURVE
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG. 3
T
A
=25
0
C
FIG.2- PULSE DERATING CURVE
PEAK PULSE POWER (Pppm) or CURRENT (lpp)
DERATING IN PERCENTAGE, %
100
100
Pppm, PEAK PULSE POWER, KW
75
10
50
1
25
0.31X0.31" (8.0X8.0mm) COPPER PAD AREAS
0.1
0.1 s
1.0 s
10 s
100 s
1.0ms
10ms
0
0
25
50
75
100
125
O
150
175
200
td. PULSE WIDTH, sec.
TA, AMBIENT TEMPERATURE. C
FIG.3- PULSE WAVEFORM
150
FIG.4- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
200
PEAK FORWARD SURGE CURRENT. (A)
lppm, PEAK PULSE CURRENT % IRSM
PULSE WIDTH (td) is DEFINED
tr=10 sec. AS THE POINT WHERE THE PEAK
CURRENT DECAYS to 50% of lppm
100
100
8.3ms Single Half Sine Wave
JEDEC Method
UNIDIRECTIONAL ONLY
PEAK VALUE
lppm
HALF VALUE- lpp
2
50
10/1000 sec. WAVEFORM
AS DEFINED BY R.E.A.
0
0
td
1.0
2.0
t, TIME, ms
3.0
4.0
10
1
10
NUMBER OF CYCLES AT 60Hz
100
FIG.5- TYPICAL JUNCTION CAPACITANCE
BIDIRECTIONAL
10000
20000
FIG.6- TYPICAL JUNCTION CAPACITANCE
Tj=25
0
C
f=1.0MHz
Vsig=50mVp-p
MEASURED AT
ZERO BIAS
Tj=25
0
C
f=1.0MHz
Vsig=50mVp-p
MEASURED AT
ZERO BIAS
Cj, JUNCTION CAPACITANCE, pF
1000
10000
Cj, JUNCTION CAPACITANCE, pF
1000
MEASURED AT
STAND-OFF
VOLTAGE,V
WM
100
VR MEASURED AT
STAND-OFF
VOLTAGE,V
WM
100
10
1
100
VWM, REVERSE STAND-OFF VOLTAGE. (V)
10
400
10
1
10
100
400
VWM, REVERSE STAND-OFF VOLTAGE. (V)
- 613 -
ELECTRICAL CHARACTERISTICS (TA=25
O
C unless otherwise noted)
Device Type
Modified
"J" Bend Lead
3.0SMCJ5.0
3.0SMCJ5.0A
3.0SMCJ6.0
3.0SMCJ6.0A
3.0SMCJ6.5
3.0SMCJ6.5A
3.0SMCJ7.0
3.0SMCJ7.0A
3.0SMCJ7.5
3.0SMCJ7.5A
3.0SMCJ8.0
3.0SMCJ8.0A
3.0SMCJ8.5
3.0SMCJ8.5A
3.0SMCJ9.0
3.0SMCJ9.0A
3.0SMCJ10
3.0SMCJ10A
3.0SMCJ11
3.0SMCJ11A
3.0SMCJ12
3.0SMCJ12A
3.0SMCJ13
3.0SMCJ13A
3.0SMCJ14
3.0SMCJ14A
3.0SMCJ15
3.0SMCJ15A
3.0SMCJ16
3.0SMCJ16A
3.0SMCJ17
3.0SMCJ17A
3.0SMCJ18
3.0SMCJ18A
3.0SMCJ20
3.0SMCJ20A
3.0SMCJ22
3.0SMCJ22A
3.0SMCJ24
3.0SMCJ24A
3.0SMCJ26
3.0SMCJ26A
3.0SMCJ28
3.0SMCJ28A
3.0SMCJ30
3.0SMCJ30A
3.0SMCJ33
3.0SMCJ33A
3.0SMCJ36
3.0SMCJ36A
3.0SMCJ40
3.0SMCJ40A
3.0SMCJ43
3.0SMCJ43A
Device
Marking
Code
HDD
HDE
HDF
HDG
HDH
HDK
HDL
HDM
HDN
HDP
HDQ
HDR
HDS
HDT
HDU
HDV
HDW
HDX
HDY
HDZ
HED
HEE
HEF
HEG
HEH
HEK
HEL
HEM
HEN
HEP
HEQ
HER
HES
HET
HEU
HEV
HEW
HEX
HEY
HEZ
HFD
HFE
HFF
HFG
HFH
HFK
HFL
HFM
HFN
HFP
HFQ
HFR
HFS
HFT
Breakdown
Voltage
V(BR) (Volts)
(Note 1)
(MIN / MAX)
Test
Current
at I
T
(mA)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
voltage
V
WM
(Volts)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
33
33
36
36
40
40
43
43
Maximum
Reverse
Leakage
at V
WM
(Note 3) I
D
(uA)
Maximum
Peak Pulse
Surge
Current I
PPM
(Note 2) (Amps)
6.40 / 7.3
6.40 / 7.0
6.67 / 8.15
6.67 / 7.37
7.22 / 8.82
7.22 / 7.98
7.78 / 9.51
7.78 / 8.60
8.33 / 10.2
8.33 / 9.21
8.89 / 10.9
8.89 / 9.83
9.44 / 11.5
9.44 / 10.4
10.0 / 12.2
10.0 / 11.1
11.1 / 13.6
11.1 / 12.3
12.2 / 14.9
12.2 / 13.5
13.3 / 16.3
13.3 / 14.7
14.4 / 17.6
14.4 / 15.9
15.6 / 19.1
15.6 / 17.2
16.7 / 20.4
16.7 / 18.5
17.8 / 21.8
17.8 / 19.7
18.9 / 23.1
18.9 / 20.9
20.0 / 24.4
20.0 / 22.1
22.2 / 27.1
22.2 /24.5
24.4 / 29.8
24.4 / 26.9
26.7 / 32.6
26.7 / 29.5
28.9 / 35.3
28.9 / 31.9
31.1 / 38.0
31.1 / 34.4
33.3 / 40.7
33.3 / 36.8
36.7 / 44.9
36.7 / 40.6
40.0 / 48.9
40.0 / 44.2
44.4 / 54.3
44.4 / 49.1
47.8 / 58.4
47.8 / 52.8
1000
1000
1000
1000
500
500
200
200
100
100
50
50
25
25
10
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
312.5
326.0
263.2
291.3
243.9
267.9
225.6
250.0
209.8
232.6
200.0
220.6
188.6
208.4
177.4
194.8
159.6
176.4
149.2
164.8
136.4
150.6
126.0
139.4
116.2
129.4
111.6
123.0
104.2
115.4
98.4
106.6
93.2
102.8
83.8
92.6
74.2
84.4
69.8
77.2
64.4
71.2
60.0
66.0
56.0
62.0
50.4
56.2
46.6
51.6
42.0
46.4
39.2
43.2
Maximum
Clamping
Voltage at I
PPM
V
C
(Volts)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
- 614 -
ELECTRICAL CHARACTERISTICS (TA=25
O
C unless otherwise noted)
Device Type
Modified
"J" Bend Lead
3.0SMCJ45
3.0SMCJ45A
3.0SMCJ48
3.0SMCJ48A
3.0SMCJ51
3.0SMCJ51A
3.0SMCJ54
3.0SMCJ54A
3.0SMCJ58
3.0SMCJ58A
3.0SMCJ60
3.0SMCJ60A
3.0SMCJ64
3.0SMCJ64A
3.0SMCJ70
3.0SMCJ70A
3.0SMCJ75
3.0SMCJ75A
3.0SMCJ78
3.0SMCJ78A
3.0SMCJ85
3.0SMCJ85A
3.0SMCJ90
3.0SMCJ90A
3.0SMCJ100
3.0SMCJ100A
3.0SMCJ110
3.0SMCJ110A
3.0SMCJ120
3.0SMCJ120A
3.0SMCJ130
3.0SMCJ130A
3.0SMCJ150
3.0SMCJ150A
3.0SMCJ160
3.0SMCJ160A
3.0SMCJ170
3.0SMCJ170A
Device
Marking
Code
HFU
HFV
HFW
HFX
HFY
HFZ
HGD
HGE
HGF
HGG
HGH
HGK
HGL
HGM
HGN
HGP
HGQ
HGR
HGS
HGT
HGU
HGV
HGW
HGX
HGY
HGZ
HHD
HHE
HHF
HHG
HHH
HHK
HHL
HHM
HHN
HHP
HHQ
HHR
Breakdown
Voltage
V(
BR
) (Volts)
(Note 1)
(MIN / MAX)
Test
Current
at I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
voltage
V
WM
(Volts)
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
Maximum
Reverse
Leakage
at V
WM
(Note 3) I
D
(uA)
Maximum
Peak Pulse
Surge
Current I
PPM
(Note 2) (Amps)
50.0 / 61.1
50.0 / 55.3
53.3 / 65.1
53.3 / 58.9
56.7 / 69.3
56.7 / 62.7
60.0 / 73.3
60.0 / 66.3
64.4 / 78.7
64.4 / 71.2
66.7 / 81.5
66.7 / 73.7
71.1 / 86.9
71.1 / 78.6
77.8 / 95.1
77.8 / 86.0
83.3 / 102
83.3 / 92.1
86.7 / 106
86.7 / 95.8
94.4 / 115
94.4 / 104
100 / 122
100 / 111
111 / 136
111 / 123
122 / 149
122 / 135
133 / 163
133 / 147
144 / 176
144 / 159
167 / 204
167 / 185
178 / 218
178 / 197
189 / 231
189 / 209
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
37.4
41.2
35.0
38.8
37.0
36.4
31.2
34.4
39.2
32.0
28.0
31.0
26.4
29.2
24.0
26.6
22.4
24.8
21.6
22.8
19.8
20.8
18.8
20.6
16.8
18.6
15.4
16.8
14.0
15.6
13.0
14.4
11.2
12.4
10.4
11.6
9.8
11.0
Maximum
Clamping
Voltage at I
PPM
V
C
(Volts)
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
Notes:
1. V(
BR
) measured after I
T
applied for 300us, I
T
=Square wave pulse or equivalent.
2. Surge current waveform per Fig. 3 and derate per Figure 2.
3. For bidirectional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
4. all terms and symbols are consistent with ANSI/IEEE C62.35
- 615 -
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