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30CPQ090-N3

30 A, 80 V, SILICON, RECTIFIER DIODE, TO-247AC

器件类别:半导体    分立半导体   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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VS-30CPQ1...PbF Series, VS-30CPQ1...-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
Base
common
cathode
2
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
TO-247AC
1
3
Anode
Anode
2
1
2
Common
cathode
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-247AC
2 x 15 A
80 V, 90 V, 100 V
0.67 V
7 mA at 125 °C
175 °C
Common cathode
7.5 mJ
DESCRIPTION
The VS-30CPQ... center tap Schottky rectifier has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 175 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
15 Apk, T
J
= 125 °C (per leg)
CHARACTERISTICS
Rectangular waveform
VALUES
30
80/100
920
0.67
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC
reverse voltage
Maximum working
peak reverse voltage
SYMBOL
V
R
80
V
RWM
80
90
90
100
100
V
VS-
30CPQ080PbF
VS-
30CPQ080-N3
VS-
30CPQ090PbF
VS-
30CPQ090-N3
VS-
30CPQ100PbF
VS-
30CPQ100-N3
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
Revision: 02-Dec-11
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 140 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
30
920
240
7.50
0.50
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Document Number: 94184
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30CPQ1...PbF Series, VS-30CPQ1...-N3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
15 A
Maximum forward voltage drop per leg
See fig. 1
V
FM (1)
30 A
15 A
30 A
Maximum reverse leakage current per leg
See fig. 2
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.86
1.05
0.67
0.81
0.55
7
500
7.5
10 000
mA
pF
nH
V/µs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
SYMBOL
T
J
, T
Stg
DC operation
See fig. 4
DC operation
R
thCS
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 55 to 175
2.20
1.10
0.24
6
0.21
Non-lubricated threads
6 (5)
12 (10)
g
oz.
kgf
cm
(lbf
in)
°C/W
UNITS
°C
R
thJC
Mounting torque
30CPQ080
Marking device
Case style TO-247AC (JEDEC)
30CPQ090
30CPQ100
Revision: 02-Dec-11
Document Number: 94184
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30CPQ1...PbF Series, VS-30CPQ1...-N3 Series
www.vishay.com
Vishay Semiconductors
100
I
F
- Instantaneous Forward Current (A)
1000
100
I
R
-Reverse Current (mA)
10
1
0.1
0.01
0.001
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.1
0.0001
0
0.5
1.0
1.5
2.0
2.5
0
20
40
60
80
100
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
20
40
60
80
100
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
t
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
t
2
0.01
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 02-Dec-11
Document Number: 94184
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30CPQ1...PbF Series, VS-30CPQ1...-N3 Series
www.vishay.com
Vishay Semiconductors
14
Allowable Case Temperature (°C)
180
Average Power Loss (W)
175
170
165
160
155
150
145
R
thJC
(DC) = 220 °C/W
12
10
8
6
4
2
0
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
RMS limit
DC
DC
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and
with
rated
V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+
V
d
= 25
V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Revision: 02-Dec-11
Document Number: 94184
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30CPQ1...PbF Series, VS-30CPQ1...-N3 Series
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
30
2
C
3
P
4
Q
5
100 PbF
6
7
Vishay Semiconductors product
Current rating
Circuit configuration:
C = Common cathode
Package:
P = TO-247
Schottky “Q” series
Voltage code
Environmental digit
080 = 80 V
090 = 90 V
100 = 100 V
-
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-30CPQ080PbF
VS-30CPQ080-N3
VS-30CPQ090PbF
VS-30CPQ090-N3
VS-30CPQ100PbF
VS-30CPQ100-N3
QUANTITY PER T/R
25
25
25
25
25
25
MINIMUM ORDER QUANTITY
500
500
500
500
500
500
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
TO-247AC PbF
TO-247AC -N3
www.vishay.com/doc?95223
www.vishay.com/doc?95226
www.vishay.com/doc?95007
www.vishay.com/doc?95470
Revision: 02-Dec-11
Document Number: 94184
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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参数对比
与30CPQ090-N3相近的元器件有:30CPQ080-N3、30CPQ080PBF_12、30CPQ090PBF、30CPQ100-N3。描述及对比如下:
型号 30CPQ090-N3 30CPQ080-N3 30CPQ080PBF_12 30CPQ090PBF 30CPQ100-N3
描述 30 A, 80 V, SILICON, RECTIFIER DIODE, TO-247AC 30 A, 80 V, SILICON, RECTIFIER DIODE, TO-247AC 30 A, 80 V, SILICON, RECTIFIER DIODE, TO-247AC 30 A, 80 V, SILICON, RECTIFIER DIODE, TO-247AC 30 A, 80 V, SILICON, RECTIFIER DIODE, TO-247AC
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