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30NWK2C48

DIODE 30 A, 100 V, SILICON, RECTIFIER DIODE, 12-10D1A, 3 PIN, Rectifier Diode

器件类别:分立半导体    二极管   

厂商名称:Toshiba(东芝)

厂商官网:http://toshiba-semicon-storage.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
零件包装代码
SOD
包装说明
R-PSIP-T3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
应用
GENERAL PURPOSE
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.83 V
JESD-30 代码
R-PSIP-T3
JESD-609代码
e0
最大非重复峰值正向电流
250 A
元件数量
2
相数
1
端子数量
3
最高工作温度
150 °C
最低工作温度
-40 °C
最大输出电流
30 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
IN-LINE
认证状态
Not Qualified
最大重复峰值反向电压
100 V
表面贴装
NO
技术
SCHOTTKY
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子位置
SINGLE
Base Number Matches
1
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30NWK2C48
TOSHIBA Schottky Barrier Rectifier Stack Trench Schottky Barrier Type
30NWK2C48
Switching Mode Power Supply Application
Converter & Chopper Application
·
·
·
·
Repetitive peak reverse voltage: V
RRM
= 100 V
Peak Forward Voltage: V
FM
= 0.83 V (max)
Average output rectified current: I
O
= 30 A
Low switching loses and output noise.
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Repetitive peak reverse voltage
Average output rectified current
Peak one cycle surge forward current
(sine wave)
Junction temperature
Storage temperature range
Symbol
V
RRM
I
O
I
FSM
T
j
T
stg
Rating
100
30
250 (50 Hz)
-40~150
-40~150
Unit
V
A
A
°C
°C
JEDEC
JEITA
TOSHIBA
12-10D1A
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance
Symbol
V
FM
I
RRM
C
j
R
th (j-c)
Test Condition
I
FM
=
15 A
V
RRM
=
100 V
V
R
=
10 V, f
=
1.0 MHz
DC Total, Junction to case
Weight: 1.7 g (typ.)
Min
¾
¾
¾
¾
Typ.
¾
¾
250
¾
Max
0.83
50
¾
1.2
Unit
V
mA
pF
°C/W
Note: V
FM
, I
RRM
, C
j
: A value of one cell.
1
2001-11-14
30NWK2C48
Polarity
*1
*1
*2
*2
MARK
30NWK2C
TYPE
30NWK2C48
Marking
Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
Handling Precaution
Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to other rectifier
products. This current leakage and not proper operating temperature or voltage may cause thermal runaway.
Please take forward and reverse loss into consideration when you design.
2
2001-11-14
30NWK2C48
i
F
– v
F
100
One cell
32
28
24
20
16
12
8
4
0
0
P
F (AV)
– I
O
180°
120°
90°
60°
a =
30°
Rectangular waveform
(one cell)
(A)
Instantaneous forward current
Tj
=
150°C
10
100°C
75°C
25°C
1
Average forward power dissipation
P
F (AV)
(W)
iF
a
360°
Conduction angle
a
4
8
12
16
20
24
28
32
36
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous forward voltage
vF
(V)
Average output rectified current
I
O
(A)
Tc max – I
O
160
140
120
100
80
60
40 0°
a
360°
20
0
0
Conduction
angle
a
VR
=
50 V
4
8
12
16
20
24
28
32
36
a =
30°
60°
Rectangular
waveform
90° 120°
180°
320
280
240
200
Surge forward current (non-repetitive)
Ta
=
25°C
One cell
Average forward power dissipation
Tc max (°C)
Surge forward current
I
FSM
(A)
f
=
60 Hz
160
50 Hz
120
80
40
0
1
3
5
10
30
50
100
Average output rectified current
I
O
(A)
Number of cycles
r
th (j-c)
– t
10
One cell
5
1000
C
j
– V
R
(typical)
f
=
1 MHz
(pF)
500
300
Ta
=
25°C
One cell
Transient thermal impedance
rth (j-c) (°C/W)
3
1
0.5
0.3
Junction capacitance
0.01
0.1
1
10
100
Cj
100
50
30
0.1
0.001
10
1
1000
3
5
10
30
50
100
Time t (s)
Reverse voltage V
R
(V)
3
2001-11-14
30NWK2C48
I
R
– T
j
100
Pulse measurement
(one cell)
(typical)
3.0
P
R (AV)
– V
R
Rectangular waveform
360°
2.5
VR
2.0
(typical)
(mA)
10
Average reverse power dissipation
PR (AV) (W)
100
DC
Conduction angle
a
Tj
=
150°C
300°
240°
180°
120°
60°
Reverse current I
R
1
50
1.5
0.1
VR
=
10 V
0.01
1.0
0.5
0.001
0
20
40
60
80
100
120
140
160
0.0
0
20
40
60
80
100
Junction temperature Tj
(°C)
Reverse voltage VR
(V)
4
2001-11-14
30NWK2C48
RESTRICTIONS ON PRODUCT USE
000707EAA
·
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
·
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
·
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
·
The information contained herein is subject to change without notice.
5
2001-11-14
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