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33C108

1 Megabit (128K x 8-Bit) CMOS

SRAM

Memory

Functional Block Diagram

EATURES

• R

-P

® Technology radiation-hardened against natural

space radiation

• 128K x 8 bit organization

• Total dose hardness:

- > 100 krad (Si)

- dependent upon space mission

• Excellent Single Event Effects:

- SEL

: No LU > 68 MeV/mg/cm

- SEU

: < 3 MeV/mg/cm

• Package:

- 32-Pin R

-P

® flat pack

• Fast access time:

- 20, 25 and 30 ns maximum times available

• Single 5V + 10% power supply

• Fully static operation

- No clock or refresh required

• Three state outputs

• TTL compatible inputs and outputs

• Low power:

- Standby: 60mA (TTL) and 10mA (CMOS)

- Operation: 180mA (20ns), 170mA (25ns) and

160mA (30ns)

ESCRIPTION

Maxwell Technologies’ 33C108 high-density 1 Megabit SRAM

microcircuit features a greater than 100 krad (Si) total dose

tolerance. Using Maxwell’s radiation-hardened R

-P

packaging technology, the 33C108 realizes a higher density,

higher performance, and lower power consumption. Its fully

static design eliminates the need for external clocks, while the

CMOS circuitry reduces power consumption and provides

higher reliability. The 33C108 is equipped with eight common

input/output lines, chip select and output enable, allowing for

greater system flexibility and eliminating bus contention. The

33C108 features the same advanced 128K x 8 SRAM, high-

speed, and low-power demand as the commercial counter-

part.

Maxwell Technologies' patented R

-P

packaging technol-

ogy incorporates radiation shielding in the microcircuit pack-

age. It eliminates the need for box shielding while providing

the required radiation shielding for a lifetime in orbit or space

mission. In a GEO orbit, R

-P

provides greater than 100

krad (Si) radiation dose tolerance. This product is available

with screening up to Class S.

06.14.02 Rev 2

All data sheets are subject to change without notice

(619) 503-3300- Fax: (619) 503-3301 - www.maxwell.com

1 Megabit (128K x 8-Bit) CMOS SRAM

ABLE

1. P

INOUT

ESCRIPTION

12-5, 27, 26, 23, 25, 4, 28, 3,

31, 2

13-15, 17-21

1, 30

YMBOL

A0-A16

I/O 1-I/O 7

ESCRIPTION

Address Inputs

Write Enable

Chip Select

Output Enable

Data Inputs/Outputs

Power (+5.0V)

Ground

No Connection

33C108

Memory

06.14.02 Rev 2

All data sheets are subject to change without notice

1 Megabit (128K x 8-Bit) CMOS SRAM

ABLE

2. 33C108 A

BSOLUTE

AXIMUM

ATINGS

ARAMETER

Voltage on any pin relative to V

Voltage on V

supply relative to V

Power Dissipation

Storage Temperature

Operating Temperature

Thermal Impedance

YMBOL

, V

OUT

Tjc

-0.5

-65

-55

33C108

NIYS

°C

°C/W

+0.5V

7.0

1.0

+150

+125

6.04

ABLE

3. 33C108 R

ECOMMENDED

PERATING

ONDITIONS

ARAMETER

Supply Voltage

Ground

Input High Voltage

Input Low Voltage

1. V

(min) = +2.0V AC (pulse width < 10 ns) for I < 20 mA.

2. V

(min) = -2.0V AC (pulse width < 10 ns) for I < 20 mA.

YMBOL

4.5

2.2

-0.5

5.5

+ 0.5

0.8

NITS

Memory

ABLE

4. 33C108 DC E

LECTRICAL

HARACTERISTICS

= 4.5 to 5.5V; V

= 0 V; T

= -55 to +125°C, unless otherwise specified)

ARAMETER

Input Leakage Current V

= V

to V

Output Leakage Current

CS = V

, V

OUT

= V

to V

Output Low Voltage, I

= 8 mA

Output High Voltage, I

= -4 mA

Average Operating Current

Min cycle, 100% Duty CS =V

, I

OUT

= 0mA V

= V

or V

-20

-25

-30

Standby Power Supply Current

CS= V

, cycle time > 25ns

CMOS Standby Current

CS > V

- 0.2V, f = 0 MHz, V

> V

- 0.2V orV

IN <

0.2V

UBGROUPS

1, 2, 3

YMBOL

-2

NITS

µA

1, 2, 3

2.4

0.4

1, 2, 3

ISB

180

170

160

1, 2, 3

SB1

06.14.02 Rev 2

All data sheets are subject to change without notice

1 Megabit (128K x 8-Bit) CMOS SRAM

ABLE

4. 33C108 DC E

LECTRICAL

HARACTERISTICS

= 4.5 to 5.5V; V

= 0 V; T

= -55 to +125°C, unless otherwise specified)

ARAMETER

Input Capacitance V

= 0V

Output Capacitance VI/O = 0V

1. Guaranteed by design.

UBGROUPS

1, 2, 3

YMBOL

OUT

33C108

NITS

Memory

06.14.02 Rev 2

All data sheets are subject to change without notice

1 Megabit (128K x 8-Bit) CMOS SRAM

ABLE

5. 33C108 F

UNCTIONAL

ESCRIPTION

ODE

Not Select

Output Disable

Read

Write

I/O P

High-Z

OUT

33C108

UPPLY

URRENT

ISB, ISB1

ABLE

6. 33C108 AC E

LECTRICAL

HARACTERISTICS FOR

EAD

YCLE

= 4.5 to 5.5V; V

= 0 V; T

= -55 to +125°C, unless otherwise specified)

ARAMETER

Read Cycle Time

-20

-25

-30

Address Access Time

-20

-25

-30

Chip Select Access Time

-20

-25

-30

Output Enable to Output Valid

-20

-25

-30

Chip Select to Output in Low-Z

-20

-25

-30

Output Enable to Output in Low-Z

-20

-25

-30

Chip Deselect to Output in High-Z

-20

-25

-30

Output Disable to Output in High-Z

-20

-25

-30

UBGROUPS

9, 10, 11

YMBOL

9, 10, 11

OLZ

9, 10, 11

OHZ

NITS

Memory

06.14.02 Rev 2

All data sheets are subject to change without notice

参数对比

与33C108RPFB-25相近的元器件有：33C108RPFI-25、33C108RPFS-25、33C108RPFI-20、33C108RPFS-30、33C108RPFB-20、33C108RPFB-30、33C108RPFS-20、33C108RPFI-30。描述及对比如下：

型号	33C108RPFB-25	33C108RPFI-25	33C108RPFS-25	33C108RPFI-20	33C108RPFS-30	33C108RPFB-20	33C108RPFB-30	33C108RPFS-20	33C108RPFI-30
描述	Standard SRAM, 128KX8, 25ns, CMOS, RAD-PAK, DFP-32	Standard SRAM, 128KX8, 25ns, CMOS, RAD-PAK, DFP-32	Standard SRAM, 128KX8, 25ns, CMOS, RAD-PAK, DFP-32	Standard SRAM, 128KX8, 20ns, CMOS, RAD-PAK, DFP-32	Standard SRAM, 128KX8, 30ns, CMOS, RAD-PAK, DFP-32	Standard SRAM, 128KX8, 20ns, CMOS, RAD-PAK, DFP-32	Standard SRAM, 128KX8, 30ns, CMOS, RAD-PAK, DFP-32	Standard SRAM, 128KX8, 20ns, CMOS, RAD-PAK, DFP-32	Standard SRAM, 128KX8, 30ns, CMOS, RAD-PAK, DFP-32
零件包装代码	DFP	DFP	DFP	DFP	DFP	DFP	DFP	DFP	DFP
包装说明	DFP,	DFP,	DFP,	DFP,	DFP,	DFP,	DFP,	DFP,	DFP,
针数	32	32	32	32	32	32	32	32	32
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
最长访问时间	25 ns	25 ns	25 ns	20 ns	30 ns	20 ns	30 ns	20 ns	30 ns
JESD-30 代码	R-XDFP-F32	R-XDFP-F32	R-XDFP-F32	R-XDFP-F32	R-XDFP-F32	R-XDFP-F32	R-XDFP-F32	R-XDFP-F32	R-XDFP-F32
长度	23.622 mm	23.622 mm	23.622 mm	23.622 mm	23.622 mm	23.622 mm	23.622 mm	23.622 mm	23.622 mm
内存密度	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1	1
端子数量	32	32	32	32	32	32	32	32	32
字数	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
字数代码	128000	128000	128000	128000	128000	128000	128000	128000	128000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
组织	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装代码	DFP	DFP	DFP	DFP	DFP	DFP	DFP	DFP	DFP
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	3.937 mm	3.937 mm	3.937 mm	3.937 mm	3.937 mm	3.937 mm	3.937 mm	3.937 mm	3.937 mm
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
宽度	16.383 mm	16.383 mm	16.383 mm	16.383 mm	16.383 mm	16.383 mm	16.383 mm	16.383 mm	16.383 mm
厂商名称	Maxwell_Technologies_Inc.	-	-	-	-	Maxwell_Technologies_Inc.	Maxwell_Technologies_Inc.	Maxwell_Technologies_Inc.	Maxwell_Technologies_Inc.
Base Number Matches	1	1	1	1	1	1	-	-	-

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