型号 | 3D3D8G32YB2496MS-00 | 3D3D8G32YB2496-C-H9 | 3D3D8G32YB2496-I-F8 | 3D3D8G32YB2496-I-H9 | 3D3D8G32YB2496-M-H9 | 3D3D8G32YB2496C | 3D3D8G32YB2496CN-00 | 3D3D8G32YB2496I | 3D3D8G32YB2496IBH-00 |
---|---|---|---|---|---|---|---|---|---|
描述 | DDR DRAM, 256MX32, CMOS, PBGA136, BGA-136 | DRAM | DRAM | DRAM | DRAM | DDR DRAM, 256MX32, CMOS, PBGA136, BGA-136 | DDR DRAM, 256MX32, CMOS, PBGA136, BGA-136 | DDR DRAM, 256MX32, CMOS, PBGA136, BGA-136 | DDR DRAM, 256MX32, CMOS, PBGA136, BGA-136 |
Objectid | 1842937404 | 114111909 | 114111907 | 114111910 | 114111911 | 1329860105 | 1842937402 | 1329860106 | 1842937466 |
包装说明 | FBGA, | , | , | , | , | FBGA, | FBGA, | FBGA, | FBGA, |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | MULTI BANK PAGE BURST | - | - | - | - | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST |
其他特性 | SELF REFRESH; SEATED HGT-NOM | - | - | - | - | ALSO OPERATES AT 1.5V; SELF REFRESH; SEATED HGT-NOM | SELF REFRESH; SEATED HGT-NOM | ALSO OPERATES AT 1.5V; SELF REFRESH; SEATED HGT-NOM | SELF REFRESH; SEATED HGT-NOM |
JESD-30 代码 | R-PBGA-B136 | - | - | - | - | R-PBGA-B136 | R-PBGA-B136 | R-PBGA-B136 | R-PBGA-B136 |
长度 | 14.8 mm | - | - | - | - | 14.8 mm | 14.8 mm | 14.8 mm | 14.8 mm |
内存密度 | 8589934592 bit | - | - | - | - | 8589934592 bit | 8589934592 bit | 8589934592 bit | 8589934592 bit |
内存集成电路类型 | DDR DRAM | - | - | - | - | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
内存宽度 | 32 | - | - | - | - | 32 | 32 | 32 | 32 |
功能数量 | 1 | - | - | - | - | 1 | 1 | 1 | 1 |
端口数量 | 1 | - | - | - | - | 1 | 1 | 1 | 1 |
端子数量 | 136 | - | - | - | - | 136 | 136 | 136 | 136 |
字数 | 268435456 words | - | - | - | - | 268435456 words | 268435456 words | 268435456 words | 268435456 words |
字数代码 | 256000000 | - | - | - | - | 256000000 | 256000000 | 256000000 | 256000000 |
工作模式 | SYNCHRONOUS | - | - | - | - | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 125 °C | - | - | - | - | 70 °C | 70 °C | 85 °C | 85 °C |
组织 | 256MX32 | - | - | - | - | 256MX32 | 256MX32 | 256MX32 | 256MX32 |
封装主体材料 | PLASTIC/EPOXY | - | - | - | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | FBGA | - | - | - | - | FBGA | FBGA | FBGA | FBGA |
封装形状 | RECTANGULAR | - | - | - | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY, FINE PITCH | - | - | - | - | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH |
座面最大高度 | 3.3 mm | - | - | - | - | 3.3 mm | 3.3 mm | 3.3 mm | 3.3 mm |
自我刷新 | YES | - | - | - | - | YES | YES | YES | YES |
最大供电电压 (Vsup) | 1.45 V | - | - | - | - | 1.45 V | 1.45 V | 1.45 V | 1.45 V |
最小供电电压 (Vsup) | 1.283 V | - | - | - | - | 1.283 V | 1.283 V | 1.283 V | 1.283 V |
标称供电电压 (Vsup) | 1.35 V | - | - | - | - | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
表面贴装 | YES | - | - | - | - | YES | YES | YES | YES |
技术 | CMOS | - | - | - | - | CMOS | CMOS | CMOS | CMOS |
温度等级 | MILITARY | - | - | - | - | COMMERCIAL | COMMERCIAL | INDUSTRIAL | INDUSTRIAL |
端子形式 | BALL | - | - | - | - | BALL | BALL | BALL | BALL |
端子节距 | 0.8 mm | - | - | - | - | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
端子位置 | BOTTOM | - | - | - | - | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
宽度 | 10.8 mm | - | - | - | - | 10.8 mm | 10.8 mm | 10.8 mm | 10.8 mm |