Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
3DD15D
DESCRIPTION
·With
TO-3 package
·High
breakdown voltage
·Low
collector saturation voltage
APPLICATIONS
·For
B/W TV horizontal output and
power amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
·
Absolut maximum ratings (Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=75℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
300
200
5
5
50
-55~175
-55~175
UNIT
V
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
2.0
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CEO
I
CBO
I
EBO
h
FE
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=10mA ; I
B
=0
I
C
=1mA ; I
E
=0
I
E
=1mA ; I
C
=0
I
C
=2.5A ;I
B
=0.25A
V
CE
=50V; I
B
=0
V
CB
=150V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=2A ; V
CE
=10V
30
MIN
200
300
5
TYP.
3DD15D
MAX
UNIT
V
V
V
1.5
1.0
0.5
0.5
250
V
mA
mA
mA
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
3DD15D
Fig.2 Outline dimensions (unindicated tolerance:
±0.10mm)
3
