UNISONIC TECHNOLOGIES CO., LTD
3N50K-MK
3A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
3N50K-MK
is an N-channel mode power MOSFET
using UTC’s advanced technology to provide customers with planar
stripe and DMOS technology. This technology allows a minimum
on-state resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation
mode.
The UTC
3N50K-MK
is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
FEATURES
* R
DS(ON)
< 3.2Ω @ V
GS
= 10V, I
D
= 1.5A
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
1.Gate
3.Source
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QW-R205-036.B
3N50K-MK
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
Ordering Number
Lead Free
Halogen Free
3N50KL-TA3-T
3N50KG-TA3-T
3N50KL-TF3-T
3N50KG-TF3-T
3N50KL-TF1-T
3N50KG-TF1-T
3N50KL-TF2-T
3N50KG-TF2-T
3N50KL-TF3-T
3N50KG-TF3-T
3N50KL-TM3-T
3N50KG-TM3-T
3N50KL-TMS-T
3N50KG-TMS-T
3N50KL-TMS2-T
3N50KG-TMS2-T
3N50KL-TMS4-T
3N50KG-TMS4-T
3N50KL-TN3-R
3N50KG-TN3-R
3N50KL-TND-R
3N50KG-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Power MOSFET
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
MARKING
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QW-R205-036.B
3N50K-MK
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
500
V
Gate-Source Voltage
V
GSS
±30
V
Continuous (T
C
=25°C)
I
D
3 (Note 5)
A
Drain Current
Pulsed (Note 2)
I
DM
12 (Note 5)
A
Avalanche Current (Note 2)
I
AR
3
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
150
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
75
W
TO-220F/TO-220F1
25
W
TO-220F3
Power Dissipation
P
D
TO-220F2
26
W
TO-251/TO-251S
TO-251S2/TO-251S4
50
W
TO-252/TO-252D
TO-220
0.5
W/°C
TO-220F/TO-220F1
0.2
W/°C
TO-220F3
Derate above 25°C
P
D
TO-220F2
0.208
W/°C
TO-251/TO-251S
TO-251S2/TO-251S4
0.4
W/°C
TO-252/TO-252D
Power Dissipation
36
W
P
D
Derate above 25°C
0.288
W/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 33.3 mH, I
AS
= 3A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤
3A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
5. Drain current limited by maximum junction temperature.
THERMAL DATA
SYMBOL
RATING
62.5
θ
JA
110
1.67
4.9
θ
JC
4.8
2.5
°C/W
°C/W
UNIT
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
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QW-R205-036.B
3N50K-MK
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=500V, V
GS
=0V
Forward
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=1.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=0.5A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=50V, I
D
=1.3A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=3A, V
GS
=0V
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
500
V
1
µA
+100 nA
-100 nA
5.0
3.2
415 530
250 350
50
60
42
18
103
18
10
1.5
5.5
60
25
130
25
13
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
3.0
3
12
1.4
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QW-R205-036.B
3N50K-MK
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
3mA
300nF
V
DS
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
V
DS
R
G
I
D
BV
DSS
L
I
AS
E
AS
= 1 LI
AS2
2
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
I
D
(t)
V
DS
(t)
Time
t
P
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R205-036.B
