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DATA SHEET
THYRISTORS
3P4MH, 3P6MH
3 A MOLD SCR
The 3P4MH and 3P6MH are P-gate fully diffused mold
SCRs with an average on-current of 3 A. The repeat peak off-
voltages (and reverse voltages) are 400 V and 600 V.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• This transistor features a small and lightweight package and
is easy to handle even on the mounting surface due to its
TO-202AA dimensions. Processing of lead wires and
heatsink (tablet) using jigs is also possible.
• Employs flame-retardant epoxy resin (UL94V-0).
APPLICATIONS
Noncontact switches of consumer electronic euipments,
electric equipments, audio quipments, and light indutry
equipements
Electrode connection
<1>Cathode
<2>Anode
<3>Gate
Standard weight: 1.4
*TC test bench-mark
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Non-repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-voltage
Average on-state current
Effective on-state current
Surge on-state current
Fusing current
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward current
Peak gate reverse voltage
Junction temperature
Storage temperature
Symbol
V
RSM
V
DSM
V
RRM
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
3P4MH
3P6MH
Ratings
V
V
V
V
A
A
A
A
2
s
A/
µ
s
W
W
A
V
°C
°C
Unit
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 1 kΩ
Refer to Figure 11.
−
Refer to Figure 2.
−
−
Refer to Figure 3.
−
−
−
−
500
700
500
700
400
600
400
600
3 (Tc = 87°C, Single half-wave,
θ
= 180°)
4.7
65 (f = 50 Hz, Sine half-wave, 1 cycle)
70 (f = 60 Hz, Sine half-wave, 1 cycle)
20 (1 ms≤t≤10 ms)
50
2 (f≥50 Hz, Duty≤10%)
0.2
1 (f≥50 Hz, Duty≤10%)
6
−40
to +125
−55
tp +150
∫
i
t
dt
dI
T
/dt
P
GM
P
G(AV)
I
FGM
V
RGM
T
j
T
stg
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13533EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
3P4MH, 3P6MH
ELECTRICAL CHARACTERISTICS (T
j
= 25°C, R
GK
= 1 kΩ)
°
Ω
Parameter
Symbol
Conditions
Specifications
MIN.
Repeat peak reverse
current
Repeat peak off-current
I
RRM
V
RM
= V
RRM
T
j
= 25°C
T
j
= 125°C
I
DRM
V
DM
= V
DRM
T
j
= 25°C
T
j
= 125°C
Critical rate-of-rise of off-
state voltage
On-state voltage
Gate trigger current
Gate trigger voltage
Gate non-trigger voltage
dV/dt
T
j
= 125°C, V
DM
=
2
V
DRM
3
−
−
−
−
−
−
−
−
0.2
TYP.
−
−
−
−
3
−
−
−
−
MAX.
100
2
100
2
−
Unit
Remarks
µ
A
mA
−
−
−
−
−
µ
A
mA
V/
µ
s
V
TM
I
GT
V
GT
V
GD
I
T
= 10 A
V
DM
= 6 V, R
L
= 100
Ω
V
DM
= 6 V, R
L
= 100
Ω
T
j
= 125°C,
V
DRM
V
DM
=
2
V
DM
= 24 V, I
TM
= 10 A
T
j
= 125°C,
I
T
= 3 A, di
R
/dt = 15 A/
µ
s
V
R
≥25
V, V
DM
=
2
V
DRM
3
dV
D
/dt = 1 V/
µ
s
Junction-to-case DC
Junction-to-ambient DC
1.6
0.2
0.8
−
V
mA
V
V
Refer to Figure 1.
Refer to Figure 14.
−
Holding current
Commutating turn-off time
I
H
T
q
−
−
1
80
5
−
mA
−
−
µ
s
Thermal resistance
R
th(j-c)
R
th(j-a)
−
−
−
−
8
75
°C/W
Refer to Figure 13.
TYPICAL CHARACTERISTICS (Ta = 25°C)
°
2
Data Sheet D13533EJ3V0DS
3P4MH, 3P6MH
Data Sheet D13533EJ3V0DS
3
