4N25
Phototransistor Optocoupler General Purpose Type
Data Sheet
Lead (Pb) Free
RoHS 6 fully
compliant
RoHS 6 fully compliant options available;
-xxxE denotes a lead-free product
Description
The 4N25 is an optocoupler for general purpose applica-
tions. It contains a light emitting diode optically coupled
to a photo-transistor. It is packaged in a 6-pin DIP pack-
age and available in wide-lead spacing option and lead
bend SMD option. Response time, t
r
, is typically 3 µs and
minimum CTR is 20% at input current of 10 mA.
Features
•
Response time
(t
r
: typ., 3 µs at V
CE
= 10 V, I
C
= 2 mA, R
L
= 100
Ω)
•
Current Transfer Ratio
(CTR: min. 20% at I
F
= 10 mA, V
CE
= 10 V)
•
Input-output isolation voltage (V
iso
= 2500 Vrms)
•
Dual-in-line package
•
UL approved
•
CSA approved
•
IEC/EN/DIN EN 60747-5-2 approved
•
Options available:
– Leads with 0.4" (10.16 mm) spacing (W00)
– Leads bends for surface mounting (300)
– Tape and reel for SMD (500)
– IEC/EN/DIN EN 60747-5-2 approvals (060)
Applications
•
I/O interfaces for computers
•
System appliances, measuring instruments
•
Signal transmission between circuits of different
potentials and impedances
CAUTION: It is advised that normal static precautions be taken in handling and assembly
of this component to prevent damage and/or degradation which may be induced by ESD.
4N25 is UL Recognized with 2500 Vrms for 1 minute per UL1577 and is approved under CSA Component Acceptance
Notice #5, File CA 88324.
RoHS
Compliant
Option
Part
Number
4N25
Rank '0'
20%<CTR
-000E
-300E
-500E
-060E
-360E
-560E
-W00E
-W60E
Package
300 mil DIP-6
300 mil DIP-6
300 mil DIP-6
300 mil DIP-6
300 mil DIP-6
300 mil DIP-6
400 mil DIP-6
400 mil DIP-6
Surface
Mount
X
X
X
X
Gull
Wing
X
X
X
X
Tape &
Reel
IEC/EN/DIN EN
60747-5-2
Quantity
65 pcs per tube
65 pcs per tube
X
X
X
X
X
X
1000 pcs per reel
65 pcs per tube
65 pcs per tube
1000 pcs per reel
65 pcs per tube
65 pcs per tube
To order, choose a part number from the part number column and combine with the desired option from the option
column to form an order entry.
Example 1:
4N25-360E to order product of 300 mil DIP-6 DC Gull Wing Surface Mount package in Tube packaging with 20%<CTR,
IEC/EN/DIN EN 60767-5-2 Safety Approval and RoHS compliant.
Example 2:
4N25-W00E to order product of 400 mil DIP-6 DC package in Tube packaging with 20%<CTR and RoHS compliant.
Option data sheets are available. Contact your Avago sales representative or authorized distributor for information.
Functional Diagram
PIN NO. AND INTERNAL
CONNECTION DIAGRAM
6
5
4
Schematic
ANODE
1
+
V
F
CATHODE
–
2
I
C
5
COLLECTOR
I
F
6
BASE
4
EMITTER
1
1. ANODE
2. CATHODE
3. NC
2
3
4. EMITTER
5. COLLECTOR
6. BASE
2
Package Outline Drawings
4N25-000E
7.3 ± 0.5
(0.287)
7.62 ± 0.3
(0.3)
LEAD FREE
A 4N25
Y Y WW
6.5 ± 0.5
(0.256)
2.8 ± 0.5
(0.110)
DATE CODE
3.5 ± 0.5
(0.138)
0.5 TYP.
(0.02)
3.3 ± 0.5
(0.13)
0.26
(0.010)
7.62 ~ 9.98
ANODE
DIMENSIONS IN MILLIMETERS AND (INCHES)
2.54 ± 0.25
(0.1)
0.5 ± 0.1
(0.02)
4N25-060E
7.3 ± 0.5
(0.287)
7.62 ± 0.3
(0.3)
LEAD FREE
A 4N25 V
Y Y WW
6.5 ± 0.5
(0.256)
2.8 ± 0.5
(0.110)
DATE CODE
3.5 ± 0.5
(0.138)
0.5 TYP.
(0.02)
3.3 ± 0.5
(0.13)
0.26
(0.010)
7.62 ~ 9.98
ANODE
DIMENSIONS IN MILLIMETERS AND (INCHES)
2.54 ± 0.25
(0.1)
0.5 ± 0.1
(0.02)
4N25-W00E
7.3 ± 0.5
(0.287)
7.62 ± 0.3
(0.3)
LEAD FREE
A 4N25
Y Y WW
6.5 ± 0.5
(0.256)
2.8 ± 0.5
(0.110)
3.5 ± 0.5
(0.138)
6.9 ± 0.5
(0.272)
2.3 ± 0.5
(0.09)
0.5 ± 0.1
(0.02)
0.26
(0.010)
10.16 ± 0.5
(0.4)
ANODE
DATE CODE
DIMENSIONS IN MILLIMETERS AND (INCHES)
2.54 ± 0.25
(0.1)
4N25-300E
7.3 ± 0.5
(0.287)
7.62 ± 0.3
(0.3)
LEAD FREE
A 4N25
Y Y WW
6.5 ± 0.5
(0.256)
1.2 ± 0.1
(0.047)
DATE CODE
3.5 ± 0.5
(0.138)
0.35 ± 0.25
(0.014)
0.26
(0.010)
ANODE
2.54 ± 0.25
(0.1)
1.0 ± 0.25
(0.39)
10.16 ± 0.3
(0.4)
DIMENSIONS IN MILLIMETERS AND (INCHES)
3
Absolute Maximum Ratings
Storage Temperature, T
S
Operating Temperature, T
A
Lead Solder Temperature, max.
(1.6 mm below seating plane)
Average Forward Current, I
F
Reverse Input Voltage, V
R
Input Power Dissipation, P
I
Collector Current, I
C
Collector-Emitter Voltage, V
CEO
Emitter-Collector Voltage, V
ECO
Collector-Base Voltage, V
CBO
Collector Power Dissipation
Total Power Dissipation
Isolation Voltage, V
iso
(AC for 1 minute, R.H. = 40 ~ 60%)
–55˚C to +150˚C
–55˚C to +100˚C
260˚C for 10 s
80 mA
6V
150 mW
100 mA
30 V
7V
70 V
250 mW
2500 Vrms
Solder Reflow Temperature Profile
1. One-time soldering reflow is recommended with-
in the condition of temperature and time profile
shown at right.
2. When using another soldering method such as in-
frared ray lamp, the temperature may rise partially
in the mold of the device. Keep the temperature on
the package of the device within the condition of (1)
above.
30 seconds
250C
260C (Peak Temperature)
Temperature (C)
150 mW
200C
150C
217C
60 sec
25C
60 ~ 150 sec
90 sec
Time (sec)
60 sec
Note: Non-halide flux should be used.
Electrical Specifications (T
A
= 25˚C)
Parameter
Forward Voltage
Reverse Current
Terminal Capacitance
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Base Breakdown Voltage
Collector Current
*Current Transfer Ratio
Collector-Emitter Saturation Voltage
Response Time (Rise)
Response Time (Fall)
Isolation Resistance
Floating Capacitance
Symbol
V
F
I
R
C
t
I
CEO
BV
CEO
BV
ECO
BV
CBO
I
C
CTR
V
CE(sat)
t
r
t
f
R
iso
C
f
Min.
–
–
–
–
30
7
70
2
20
–
–
–
5 x 10
10
–
Typ.
1.2
–
50
–
–
–
–
–
–
0.1
3
3
1 x 10
11
1
Max.
1.5
10
–
50
–
–
–
–
–
0.5
–
–
–
–
Units
V
µA
pF
nA
V
V
V
mA
%
V
µs
µs
Ω
pF
Test Conditions
I
F
= 10 mA
V
R
= 4 V
V = 0, f = 1 KHz
V
CE
= 10 V, I
F
= 0
I
C
= 0.1 mA, I
F
= 0
I
E
= 10 µA, I
F
= 0
I
C
= 0.1 mA, I
F
= 0
I
F
= 10 mA
V
CE
= 10 V
I
F
= 50 mA, I
C
= 2 mA
V
CE
= 10 V, I
C
= 2 mA
R
L
= 100 Ω
DC 500 V 40 ~ 60%
R.H.
V = 0, f = 1 MHz
* CTR =
I
C
x 100%
I
F
4
100
I
F
– FORWARD CURRENT – mA
80
60
40
20
0
-55
P
C
– COLLECTOR POWER DISSIPATION – mW
200
150
100
50
-25
0
25
50
75
100 125
0
-55
-25
0
25
50
75
100 125
T
A
– AMBIENT TEMPERATURE – °C
T
A
– AMBIENT TEMPERATURE – °C
Figure 1. Forward current vs. temperature.
Figure 2. Collector power dissipation vs. temperature.
CTR – CURRENT TRANSFER RATIO – %
500
I
F
– FORWARD CURRENT – mA
200
100
50
20
10
5
2
1
0
0.5
1.0
1.5
2.0
2.5
3.0
T
A
= 75°C
T
A
= 50°C
T
A
= 25°C
T
A
= 0°C
T
A
= -25°C
50
40
30
20
V
CE
= 10 V
T
A
= 25°C
R
BE
=
10
500 kΩ
0
0.1 0.2 0.5 1
100 kΩ
2
5 10 20
50 100
V
F
– FORWARD VOLTAGE – V
I
F
– FORWARD CURRENT – mA
Figure 3. Forward current vs. forward voltage.
Figure 4. Current transfer ratio vs. forward current.
15
I
C
– COLLECTOR CURRENT – mA
T
A
= 25°C
I
F
= 40 mA
P
C
(MAX.)
10
I
F
= 30 mA
I
F
= 20 mA
5
I
F
= 10 mA
I
F
= 5 mA
0
0
5
10
15
V
CE
– COLLECTOR-EMITTER VOLTAGE – V
Figure 5. Collector current vs. collector-emitter voltage.
5
