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GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25
4N37
4N26
H11A1
4N27
H11A2
4N28
H11A3
4N35
H11A4
SCHEMATIC
1
6
4N36
H11A5
WHITE PACKAGE (-M SUFFIX)
6
1
6
2
5
3
NC
4
1
6
1
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
BLACK PACKAGE (NO -M SUFFIX)
6
1
6
1
6
1
DESCRIPTION
The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin
dual in-line package.
FEATURES
• Also available in white package by specifying -M suffix, eg. 4N25-M
• UL recognized (File # E90700)
• VDE recognized (File # 94766)
- Add option V for white package (e.g., 4N25V-M)
- Add option 300 for black package (e.g., 4N25.300)
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
© 2005 Fairchild Semiconductor Corporation
Page 1 of 15
6/15/05
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25
4N37
4N26
H11A1
4N27
H11A2
4N28
H11A3
4N35
H11A4
4N36
H11A5
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Wave solder temperature (see page 14 for reflow solder profiles)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
EMITTER
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current - Peak (300µs, 2% Duty Cycle)
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
V
CEO
V
CBO
V
ECO
P
D
30
70
7
150
2.0 (non-M), 1.76 (-M)
V
V
V
mW
mW/°C
I
F
V
R
I
F
(pk)
P
D
100 (non-M), 60 (-M)
6
3
150 (non-M), 120 (-M)
2.0 (non-M), 1.41 (-M)
mA
V
A
mW
mW/°C
T
STG
T
OPR
T
SOL
P
D
-55 to +150
-55 to +100
260 for 10 sec
250
3.3 (non-M), 2.94 (-M)
°C
°C
°C
mW
Symbol
Value
Units
© 2005 Fairchild Semiconductor Corporation
Page 2 of 15
6/15/05
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25
4N37
4N26
H11A1
4N27
H11A2
4N28
H11A3
4N35
H11A4
4N36
H11A5
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Reverse Leakage Current
DETECTOR
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
(I
C
= 1.0 mA, I
F
= 0)
(I
C
= 100 µA, I
F
= 0)
(I
E
= 100 µA, I
F
= 0)
(V
CE
= 10 V, I
F
= 0)
(V
CB
= 10 V)
(V
CE
= 0 V, f = 1 MHz)
BV
CEO
BV
CBO
BV
ECO
I
CEO
I
CBO
C
CE
8
30
70
7
100
120
10
1
50
20
V
V
V
nA
nA
pF
(I
F
= 10 mA)
(V
R
= 6.0 V)
V
F
I
R
1.18
0.001
1.50
10
V
µA
Test Conditions
Symbol
Min
Typ*
Max
Unit
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions Symbol
(Non ‘-M’, Black Package) (f = 60 Hz, t = 1 min)
(‘-M’, White Package) (f = 60 Hz, t = 1 sec)
(V
I-O
= 500 VDC)
(V
I-O
= &, f = 1 MHz)
(‘-M’ White Package)
V
ISO
R
ISO
C
ISO
Min
5300
7500
10
11
0.5
0.2
2
Typ*
Max
Units
Vac(rms)
Vac(pk)
Ω
pF
pF
Note
* Typical values at T
A
= 25°C
© 2005 Fairchild Semiconductor Corporation
Page 3 of 15
6/15/05
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25
4N37
4N26
H11A1
4N27
H11A2
4N28
H11A3
4N35
H11A4
4N36
H11A5
TRANSFER CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
DC Characteristic
Test Conditions
Symbol
Device
4N35
4N36
4N37
H11A1
H11A5
(I
F
= 10 mA, V
CE
= 10 V)
4N25
4N26
H11A2
H11A3
4N27
4N28
H11A4
(I
F
= 10 mA, V
CE
= 10 V, T
A
= -55°C)
4N35
4N36
4N37
4N35
4N36
4N37
4N25
4N26
4N27
4N28
V
CE (SAT)
(I
C
= 0.5 mA, I
F
= 10 mA)
4N35
4N36
4N37
H11A1
H11A2
H11A3
H11A4
H11A5
4N25
4N26
4N27
4N28
H11A1
H11A2
H11A3
H11A4
H11A5
4N35
4N36
4N37
Min
100
50
30
Typ*
Max
Unit
20
%
10
Current Transfer Ratio,
Collector to Emitter
CTR
40
(I
F
= 10 mA, V
CE
= 10 V, T
A
= +100°C)
40
(I
C
= 2 mA, I
F
= 50 mA)
0.5
Collector-Emitter
Saturation Voltage
0.3
V
0.4
AC Characteristic
Non-Saturated
Turn-on Time
(I
F
= 10 mA, V
CC
= 10 V, R
L
= 100
Ω
)
(Fig.20)
T
ON
2
µs
Non Saturated
Turn-on Time
(I
C
= 2 mA, V
CC
= 10 V, R
L
= 100
Ω
)
(Fig.20)
T
ON
2
10
µs
© 2005 Fairchild Semiconductor Corporation
Page 4 of 15
6/15/05
