4N32, 4N33
www.vishay.com
Vishay Semiconductors
Optocoupler, Photodarlington Output, High Gain,
With Base Connection
FEATURES
A
C
NC
1
2
3
6 B
5 C
4 E
• Very high current transfer ratio, 500 % min.
• High isolation resistance, 10
11
Ω
typical
• Standard plastic DIP package
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
i179005_1
V
D E
i179005
AGENCY APPROVALS
• UL1577, file no. E52744 system code H
• DIN EN 60747-5-2 (VDE 0884) / DIN EN 60747-5-5
(pending), available with option 1
• BSI IEC 60950; IEC 60065
• FIMKO
DESCRIPTION
The 4N32 and 4N33 are optically coupled isolators with a
gallium arsenide infrared LED and a solicon photodarlington
sensor.
Switching can be achieved while maintaining a high degree
of isolation between driving and load circuits.
These optocouplers can be used to replace reed and
mercury relays with advantages of long life, high speed
switching and elimination of magnetic fields.
ORDERING INFORMATION
4
N
3
#
-
X
0
#
#
T
TAPE AND
REEL
DIP
PART NUMBER
PACKAGE OPTION
7.62 mm
AGENCY CERTIFIED/PACKAGE
UL, BSI, FIMKO
DIP-6
Note
• Additional options may be possible, please contact sales office
≥
500
4N32
CTR (%)
≥
500
4N33
Rev. 1.3, 30-Nov-17
Document Number: 81865
1
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
4N32, 4N33
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
R
I
F
P
diss
From 55 °C
BV
CEO
BV
EBO
BV
CBO
BV
ECO
I
C
P
diss
VALUE
3
60
100
1.33
30
8
50
5
100
150
2
P
tot
1s
V
ISO
250
3.3
5300
7
7
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
stg
T
amb
At 260 °C
≥
≥
10
12
10
11
UNIT
V
mA
mW
mW/°C
V
V
V
V
mA
mW
mW/°C
mW
mW/°C
V
RMS
mm min.
mm min.
Ω
Ω
°C
°C
s
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
input
Reverse voltage
Forward current
Power dissipation
Derate linearly
output
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector base breakdown voltage
Emitter collector breakdown voltage
Collector (load) current
Power dissipation
Derate linearly
coupler
Total dissipation
Derate linearly
Isolation test voltage (between emitter
Leakage path
Air path
Isolation resistance
Storage temperature
Operating temperature
Lead soldering time
(1)
-55 to +150
-55 to +100
10
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP)
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
input
Forward voltage
Reverse current
Capacitance
output
Collector emitter breakdown voltage
(1)
Collector base breakdown
Emitter base breakdown
voltage
(1)
voltage
(1)
I
C
= 100 μA, I
F
= 0
I
C
= 100 μA, I
F
= 0
I
C
= 100 μA, I
F
= 0
I
C
= 100 μA, I
F
= 0
V
CE
= 10 V, I
F
= 0
I
C
= 0.5 mA, V
CE
= 5 V
coupler
Collector emitter saturation voltage
Coupling capacitance
V
CEsat
-
-
1
1.5
-
-
V
pF
BV
CEO
BV
CBO
BV
EBO
BV
ECO
I
CEO
h
FE
30
50
8
5
-
13
-
-
-
10
1
-
-
-
-
-
100
-
V
V
V
V
nA
I
F
= 50 mA
V
R
= 3 V
V
R
= 0 V
V
F
I
R
C
O
-
-
-
1.25
0.1
25
1.5
100
V
μA
pF
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Emitter collector breakdown voltage
(1)
Collector emitter leakage current
Notes
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements
(1)
Indicates JEDEC
®
registered values
Rev. 1.3, 30-Nov-17
Document Number: 81865
2
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
4N32, 4N33
www.vishay.com
Vishay Semiconductors
TEST CONDITION
V
CE
= 10 V, I
F
= 10 mA
SYMBOL
CTR
MIN.
500
TYP.
-
MAX.
-
UNIT
%
CURRENT TRANSFER RATIO
PARAMETER
Current transfer ratio
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on time
Turn-off time
TEST CONDITION
V
CC
= 10 V, I
C
= 50 mA
I
F
= 200 mA, R
L
= 180
Ω
SYMBOL
t
on
t
off
MIN.
-
-
TYP.
-
-
MAX.
5
100
UNIT
μs
μs
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification
Comparative tracking index
V
IOTM
V
IORM
P
SO
I
SI
T
SI
Creepage distance
Clearance distance
Insulation thickness, reinforced rated
Standard DIP-6
Standard DIP-6
Per IEC 60950 2.10.5.1
TEST CONDITION
According to IEC 68 part 1
CTI
SYMBOL
MIN.
-
175
8000
890
-
-
-
7
7
0.4
TYP.
55 / 100 / 21
-
-
-
-
-
-
-
-
-
MAX.
-
399
-
-
700
400
175
-
-
-
V
V
mW
mA
°C
mm
mm
mm
UNIT
Note
• As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1.2
10
Normalized to:
V
CE
= 5 V
I
F
= 10 mA
T
A
= 25 °C
V
CE
= 5 V
Normalized to:
V
CE
= 5 V
1 I
F
= 10 mA
T
A
= 25 °C
0.1
V
CE
= 5 V
NCTR
CE
- Normalized CTR
CE
1.0
0.8
0.6
0.4
0.2
NI
CE
- Normalized I
CE
V
CE
= 1 V
0.01
V
CE
= 1 V
0.0
0.1
1
10
100
1000
0.001
0.1
i4n32-33_03
1
10
100
i4n32-33_02
I
F
- LED Current (mA)
I
F
- LED Current (mA)
Fig. 1 - Normalized Non-Saturated and Saturated CTR
CE
vs.
LED Current
Fig. 2 - Normalized Non-Saturated and Saturated Collector Emitter
Current vs. LED Current
Rev. 1.3, 30-Nov-17
Document Number: 81865
3
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
4N32, 4N33
www.vishay.com
Vishay Semiconductors
20
10
t
pHL
- High/Low Propagation
Delay (µs)
NI
CB
- Normalized I
CB
Normalized to:
V
CB
= 3.5 V
1
I
F
= 10 mA
T
A
= 25 °C
0.1
1 kΩ
15
T
A
= 25 °C
V
CC
= 5 V
V
TH
= 1.5 V
10
100
Ω
0.01
5
0.001
0.1
i4n32-33_04
1
10
100
0
0
i4n32-33_07
5
10
15
20
I
F
= LED Current (mA)
I
F
- LED Current (mA)
Fig. 3 - Normalized Collector Base Photocurrent vs.
LED Current
Fig. 6 - High to Low Propagation Delay vs.
Collector Load Resistance and LED Current
10 000
h
FE
- Forward Transfer Gain
T
A
= 25 °C
8000
V
CE
= 5 V
I
F
V
CC
R
L
t
D
t
R
t
PLH
V
TH
= 1.5 V
t
PHL
t
S
t
F
I
F
V
O
6000
4000
V
CE
= 1 V
2000
0
0.01
V
O
0.1
1
10
100
i4n32-33_08
i4n32-33_05
I
b
- Base Current (µA)
Fig. 7 - Switching Waveform and Switching Schematic
Fig. 4 - Non-Saturated and Saturated h
FE
vs.
Base Current
80
t
pLH
- Low/High Propagation
Delay (µs)
T
A
= 25 °C, V
CC
= 5 V
V
TH
= 1.5 V
60
1 kΩ
40
220
Ω
470
Ω
20
100
Ω
0
0
5
10
15
20
i4n32-33_06
I
F
- LED Current (mA)
Fig. 5 - Low to High Propagation Delay vs.
Collector Load Resistance and LED Current
Rev. 1.3, 30-Nov-17
Document Number: 81865
4
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
4N32, 4N33
www.vishay.com
PACKAGE DIMENSIONS
in millimeters
DIP-6 Package Dimensions
3
2
1
Pin one ID
Vishay Semiconductors
6.4 ± 0.1
4
5
8.6 ± 0.1
6
ISO method A
1 min.
1.2 ± 0.1
7.62 typ.
3.555 ± 0.255
18°
4° typ.
0.8 min.
0.85 ± 0.05
0.5 ± 0.05
i178004
2.95 ± 0.5
0.25 typ.
7.62 to 8.81
3° to 9°
2.54 typ.
PACKAGE MARKING
4N32
V YWW H 68
Notes
• Example marking for 4N32
• Only options 1, and 7 reflected in the package marking
• The VDE logo is only marked on option 1 parts
• Tape and reel suffix (T) is not part of the package marking
Rev. 1.3, 30-Nov-17
Document Number: 81865
5
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
