UNISONIC TECHNOLOGIES CO., LTD
4N60-E
4A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
4N60-E
is a high voltage power MOSFET
and is designed to have better characteristics, such as
fast switching time, low gate charge, low on-state
resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters
and bridge circuits.
FEATURES
* R
DS(ON)
< 2.5Ω @ V
GS
= 10 V, I
D
= 2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high RuggednessA
SYMBOL
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QW-R502-970.C
4N60-E
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
TO-262
TO-263
TO-263
DFN-8(5×6)
S: Source
1
G
G
G
G
G
G
G
G
G
G
G
G
G
G
S
2
D
D
D
D
D
D
D
D
D
D
D
D
D
D
S
Pin Assignment
3
4
5
6
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
-
-
-
S
-
-
-
S
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
G
D D
Ordering Number
Lead Free
Halogen Free
4N60L-TA3-T
4N60G-TA3-T
4N60L-TF3-T
4N60G-TF3-T
4N60L-TF1-T
4N60G-TF1-T
4N60L-TF2-T
4N60G-TF2-T
4N60L-TF3T-T
4N60G-TF3T-T
4N60L-TM3-T
4N60G-TM3-T
4N60L-TMS-T
4N60G-TMS-T
4N60L-TMS2-T
4N60G-TMS2-T
4N60L-TMS4-T
4N60G-TMS4-T
4N60L-TN3-R
4N60G-TN3-R
4N60L-TND-R
4N60G-TND-R
4N60L-T2Q-T
4N60G-T2Q-T
4N60L-TQ2-R
4N60G-TQ2-R
4N60L-TQ2-T
4N60G-TQ2-T
-
4N60G-K08-5060-R
Note: Pin Assignment: G: Gate
D: Drain
Power MOSFET
7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
D
8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
D
Packing
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Tape Reel
Tape Reel
Tube
Tape Reel
Tube
Tape Reel
MARKING
PACKAGE
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
TO-262
TO-263
MARKING
DFN-8(5×6)
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QW-R502-970.C
4N60-E
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
4.4
A
4.0
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
16
A
200
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
10.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262/TO-263
106
TO-220F/TO-220F1
36
TO-220F3
TO-220F2
38
Power Dissipation
P
D
W
TO-251/TO-252/TO-252D
TO-251S/TO-251S2
50
TO-251S4
DFN-8(5×6)
30
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, I
AS
= 3.65A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤4.4A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
PACKAGE
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2/TO-220F3
TO-251/TO-252/TO-252D
TO-251S/TO-251S2
TO-251S4
DFN-8(5×6)
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F3
TO-220F2
TO-251/TO-252/TO-252D
TO-251S/TO-251S2
TO-251S4
DFN-8(5×6)
SYMBOL
RATINGS
62.5
θ
JA
110
75
1.18
3.47
θ
JC
3.28
2.5
4.17
°С/W
°С/W
UNIT
Junction to Ambient
Junction to Case
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QW-R502-970.C
4N60-E
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
600
V
10
μA
100 nA
-100 nA
V/°С
4.0
2.5
620
75
15
130
100
260
100
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
V
GS
= 0V, I
D
= 250μA
V
DS
= 600V, V
GS
= 0V
Forward
V
GS
= 30V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30V, V
DS
= 0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 2.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
= 300V, I
D
= 4.0A,
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 480V,I
D
= 4.0A,
Gate-Source Charge
Q
GS
V
GS
= 10V (Note 1, 2)
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
= 4.4A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
S
= 4.4A,
dI
F
/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
0.6
2.0
2.3
520
55
11
60
60
220
70
65
6
8
1.4
4.4
17.6
250
1.5
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QW-R502-970.C
4N60-E
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-970.C
