UNISONIC TECHNOLOGIES CO., LTD
4N65-Q
4A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
4N65-Q
is a high voltage power MOSFET
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristic. This power MOSFET is usually
used in high speed switching applications including power
supplies, PWM motor controls, high efficient DC to DC
converters and bridge circuits.
FEATURES
* R
DS(ON)
< 3.1Ω @ V
GS
= 10 V, I
D
= 2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
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QW-R502-963.E
4N65-Q
ORDERING INFORMATION
1
G
G
G
G
G
G
G
G
G
G
G
G
G
G
S
2
D
D
D
D
D
D
D
D
D
D
D
D
D
D
S
Pin Assignment
3
4
5
6
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S G D D
Ordering Number
Package
Lead Free
Halogen Free
4N65L-TA3-T
4N65G-TA3-T
TO-220
4N65L-TF1-T
4N65G-TF1-T
TO-220F1
4N65L-TF2-T
4N65G-TF2-T
TO-220F2
4N65L-TF3T-T
4N65G-TF3T-T
TO-220F3
4N65L-TF3-T
4N65G-TF3-T
TO-220F
4N65L-TM3-T
4N65G-TM3-T
TO-251
4N65L-TMS-T
4N65G-TMS-T
TO-251S
4N65L-TMS2-T
4N65G-TMS2-T
TO-251S2
4N65L-TMS4-T
4N65G-TMS4-T
TO-251S4
4N65L-TN3-R
4N65G-TN3-R
TO-252
4N65L-TND-R
4N65G-TND-R
TO-252D
4N65L-T2Q-T
4N65G-T2Q-T
TO-262
4N65L-TQ2-R
4N65G-TQ2-R
TO-263
4N65L-TQ2-T
4N65G-TQ2-T
TO-263
-
4N65G-K08-5060-R
DFN-8(5×6)
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Power MOSFET
7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
D
8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
D
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Tube
Tape Reel
Tube
Tape Reel
(1) T: Tube, R: Tape Reel
4N65L-TA3-T
(1)Packing Type
(2)Package Type
(3)Green Package
(2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2
TF3: TO-220F, TF3T: TO-220F3, TM3: TO-251,
TMS: TO-251S, TMS2: TO-251S2, TN3: TO-252,
TMS4: TO-251S4, TND: TO-252D, T2Q: TO-262,
TQ2: TO-263, K08-5060: DFN-8(5×6)
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
PACKAGE
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
TO-262
TO-263
MARKING
DFN-8(5×6)
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QW-R502-963.E
4N65-Q
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note2)
I
AR
4.4
A
Continuous
I
D
4.0
A
Drain Current
16
A
Pulsed (Note2)
I
DM
Single Pulsed (Note3)
E
AS
60
mJ
Avalanche Energy
10.6
mJ
Repetitive (Note2)
E
AR
Peak Diode Recovery dv/dt (Note4)
dv/dt
4.5
V/ns
TO-220/TO-262/TO-263
106
W
TO-220F/TO-220F1
36
W
TO-220F3
TO-220F2
38
W
Power Dissipation
P
D
TO-251/TO-251S
TO-251S2/TO-251S4
50
W
TO-252/TO-252D
DFN-8(5×6)
30
W
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 30mH, I
AS
= 2.1A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤4.4A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
UNIT
°С/W
PACKAGE
SYMBOL
RATINGS
TO-220/TO-262/TO-263
TO-220F/TO-220F1
62.5
TO-220F2/TO-220F3
Junction to Ambient
θ
JA
TO-251/ TO-251S
TO-251S2/TO-251S4
83
TO-252/TO-252D
DFN-8(5×6)
75 (Note)
TO-220/TO-262/TO-263
1.18
TO-220F/TO-220F1
3.47
TP-220F3
TO-220F2
3.28
Junction to Case
θ
JC
TO-251/ TO-251S
TO-251S2/TO-251S4
2.5
TO-252/TO-252D
DFN-8(5×6)
4.17 (Note)
2
Note: The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
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QW-R502-963.E
4N65-Q
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0 V, I
D
= 250μA
650
Drain-Source Leakage Current
I
DSS
V
DS
= 650 V, V
GS
= 0 V
Forward
V
GS
= 30 V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30 V, V
DS
= 0 V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 2.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25 V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
V
DS
= 325V, I
D
= 4.0A,
Turn-On Rise Time
t
R
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 520V,I
D
= 4.0A,
Gate-Source Charge
Q
GS
V
GS
= 10V (Note 1, 2)
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 4.4A
Maximum Continuous Drain-Source
I
S
Diode Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
= 0V, I
S
= 4.4A,
dI
F
/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
TYP MAX UNIT
V
10
μA
100 nA
-100 nA
V/°С
4.0
3.1
530
70
13
75
85
130
80
75
21
24
1.4
4.4
17.6
250
1.5
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
0.6
2.9
470
50
10
38
45
90
35
55
15
18
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QW-R502-963.E
4N65-Q
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-963.E
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