UNISONIC TECHNOLOGIES CO., LTD
4N65Z-E
4A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
4N65Z-E
is a high voltage power MOSFET designed
to have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristic. This power MOSFET is usually used in high speed
switching applications including power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* R
DS(ON)
= 3.1Ω @ V
GS
=10V, I
D
=2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Package
TO-220F1
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
4N65ZL- TF1-T
4N65ZG-TF1-T
4N65ZL- TN3-T
4N65ZG-TN3-T
4N65ZL- TN3-R
4N65ZG-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
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1 of 6
QW-R502-995. A
4N65Z-E
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±20
V
Avalanche Current (Note 2)
I
AR
4.4
A
4.0
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
16
A
Single Pulsed (Note 3)
E
AS
200
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
10.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220F1
36
W
Power Dissipation
P
D
TO-252
50
W
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, I
AS
= 4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤4.4A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
Jc
RATINGS
62.5
83
3.47
2.5
UNIT
°С/W
°С/W
°С/W
°С/W
PARAMETER
TO-220F1
Junction to Ambient
TO-252
TO-220F1
Junction to Case
TO-252
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2 of 6
QW-R502-995. A
4N65Z-E
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0 V, I
D
= 250μA
650
V
Drain-Source Leakage Current
I
DSS
V
DS
= 650 V, V
GS
= 0 V
10
μA
5
μA
Forward
V
GS
= 20 V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -20 V, V
DS
= 0 V
-5
μA
△
BV
DSS
/△T
J
I
D
=250μA, Referenced to 25°C
Breakdown Voltage Temperature Coefficient
0.6
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 2.2A
2.6 3.1
Ω
DYNAMIC CHARACTERISTICS
550 650 pF
Input Capacitance
C
ISS
V
DS
=25V, V
GS
= 0V,
Output Capacitance
C
OSS
57
77
pF
f = 1MHz
Reverse Transfer Capacitance
C
RSS
11
15
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
50
70
ns
Turn-On Rise Time
t
R
275 310
ns
V
DD
=30V, I
D
=0.5A,
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
150 180
ns
Turn-Off Fall Time
t
F
325 355
ns
Total Gate Charge
Q
G
60
nC
V
DS
= 50V,I
D
=1.3A,
Gate-Source Charge
Q
GS
16
nC
V
GS
= 10V (Note 1, 2)
Gate-Drain Charge
Q
GD
18
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 4.4A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
4.4
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
17.6
A
Forward Current
250
ns
Reverse Recovery Time
t
rr
V
GS
= 0V, I
S
= 4.4A,
dI
F
/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
1.5
μC
Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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3 of 6
QW-R502-995. A
4N65Z-E
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
Power MOSFET
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4 of 6
QW-R502-995. A
4N65Z-E
TEST CIRCUITS AND WAVEFORMS (Cont.)
V
DS
V
GS
R
G
R
L
V
DD
Power MOSFET
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
D.U.T.
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Unclamped Inductive Switching Test Circuit
Time
Unclamped Inductive Switching Waveforms
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5 of 6
QW-R502-995. A
stm32/stm8
