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50PF160

Rectifier Diode, 1 Phase, 1 Element, 50A, 1600V V(RRM), Silicon, DO-203AB, PLASTIC, DO-5, 1 PIN

器件类别:分立半导体    二极管   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Infineon(英飞凌)
包装说明
PLASTIC, DO-5, 1 PIN
Reach Compliance Code
compliant
其他特性
HIGH SURGE CAPABILITY
应用
GENERAL PURPOSE
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-203AB
JESD-30 代码
O-MUPM-D1
最大非重复峰值正向电流
595 A
元件数量
1
相数
1
端子数量
1
最大输出电流
50 A
封装主体材料
METAL
封装形状
ROUND
封装形式
POST/STUD MOUNT
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
最大重复峰值反向电压
1600 V
表面贴装
NO
端子形式
SOLDER LUG
端子位置
UPPER
处于峰值回流温度下的最长时间
40
Base Number Matches
1
文档预览
Bulletin I27173 rev. A 01/05
50PF(R)...
High Voltage Series
STANDARD RECOVERY DIODES
GEN II DO5
Features
High surge current capability
Designed for a wide range of applications
Stud cathode and stud anode version
Leaded version available
Low thermal resistance
Stud Version
50 A
50PF(R)...
Typical Applications
Converters
Power supplies
Machine tool controls
Welding
Any High Voltage Input Rectification Bridge
Major Ratings and Characteristics
Parameters
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
T
J
range
range
case style DO-203AB (DO-5)
Units
A
°C
A
A
50PF (R)...
140 to 160
50
128
78
570
595
1600
1450
1400 to 1600
- 55 to 160
A
2
s
V
°C
www.irf.com
1
50PF (R)... Series
Bulletin I27173 rev. A 01/05
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
RRM
, maximum
repetitive peak
reverse voltage
V
1400
1600
V
RSM
, maximum non-
repetitive peak
reverse voltage
V
1650
1900
I
RRM
max.
@ T
J
= 150°C
mA
4.5
140
50PF (R)...
160
Forward Conduction
Parameter
I
F(AV)
Max. average forward current
@ Case temperature
Max. peak, one-cycle forward,
non-repetitive surge current
50PF(R)...
140 to 160
50
128
78
570
595
480
500
Units Conditions
A
°C
A
t = 10ms
A
t = 8.3 ms
t = 10ms
t = 8.3 ms
t = 10ms
A
2
s
t = 8.3ms
t = 10ms
t = 8.3ms
A
√s
2
180° conduction, half sine wave
I
F(RMS)
Max. RMS forward current
I
FSM
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= 150°C
It
2
Maximum I t for fusing
2
1600
1450
1150
1050
I
√t
2
Maximum I
√t
for fusing
2
16000
0.77
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
I
pk
= 125A, T
J
= 25°C, t
p
= 400µs rectangular wave
V
F(TO)
Low level value of threshold
voltage
r
f
V
FM
Low level value of forward
slope resistance
Max. forward voltage drop
V
4.30
1.50
mΩ
V
2
www.irf.com
50PF (R)... Series
Bulletin I27173 rev. A 01/05
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to case
50PF (R)...
140 to 160
-55 to 160
-55 to 160
0.51
0.25
3.4
+0-10%
30
2.3
+0-10%
Units
°C
Conditions
DC operation
K/W
Nm
lbf
·
in
Nm
lbf
·
in
g (oz)
See Outline Table
Mounting surface, smooth, flat and
greased
Tighting on nut (1)
Not lubricated threads
Tighting on hexagon (2)
Lubricated threads
R
thCS
Max. thermal resistance, case
to heatsink
T
Allowable mounting torque
20
wt
Approximate weight
Case style
15.8 (0.56)
DO-203AB (DO5)
(1) As general recommendation we suggest to tight on Hexagon and not on nut
(2) Torque must be appliable only to Hexagon and not to plastic structure
∆R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction
0.11
0.16
0.20
0.29
0.49
Rectangular conduction
0.10
0.16
0.22
0.31
0.50
Units
Conditions
T
J
= T
J
max.
K/W
Maximum Allowable Case Temperature (°C)
180
170
160
150
140
130
120
110
100
0
10
20
30
40
50
60
Average Forward Current (A)
50PF(R) Serie
140 to 160
RthJC = 0.51K/W
180˚ Sine
Fig. 1 - Current Ratings Characteristics
www.irf.com
3
50PF (R)... Series
Bulletin I27173 rev. A 01/05
550
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
500
450
400
350
300
250
200
150
100
1
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = Tj Max.
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
600
550
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = Tj Max.
500
No Voltage Reapplied
Rated Vrrm Reapplied
450
400
350
300
250
200
150
100
0.01
50PF(R) Series
40HF(R) Series
140 to 160
50PF(R) Series
140 to 160
10
100
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 2 - Maximum Non-Repetitive Surge Current
Fig. 3 - Maximum Non-Repetitive Surge Current
Transient Thermal Impedance Z
thJC
(K/W)
1000
Instantaneous Forward Current (A)
1
Steady State Value
RthJC = 0.51 K/W
(DC Operation)
Tj = Tj Max
100
0.1
Tj = 25˚C
10
50PF(R)
Series
40HF (R)
Series
140 to 160
50PF(R)
Series
50PF(R)
Series
140 to 160
1
0
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous Forward Voltage (V)
Fig. 4 - Forward Voltage Drop
0.01
0.0001 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 4 - Thermal Impedance Z
thJC
Characteristics
4
www.irf.com
50PF (R)... Series
Bulletin I27173 rev. A 01/05
Outline Table
Fig. A - 50PF (R)...
Case Style DO-203AB (DO-5)
Note:
For Metric device please contact Factory
For leaded device please contact Factory
Ordering Information Table
Device Code
50
1
PF
2
R
3
160
4
1
2
3
4
- 50
= Standard device
- PF
= Plastic Package
- None = Stud Normal Polarity (Cathode to Stud)
R
= Stud Reverse Polarity (Anode to Stud)
- Voltage code: Code x 10 = V
RRM
(See Voltage Ratings table)
www.irf.com
5
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参数对比
与50PF160相近的元器件有:50PFR140PBF。描述及对比如下:
型号 50PF160 50PFR140PBF
描述 Rectifier Diode, 1 Phase, 1 Element, 50A, 1600V V(RRM), Silicon, DO-203AB, PLASTIC, DO-5, 1 PIN Rectifier Diode, 1 Phase, 1 Element, 50A, 1400V V(RRM), Silicon, DO-203AB, PLASTIC, DO-5, 1 PIN
是否Rohs认证 符合 符合
厂商名称 Infineon(英飞凌) Infineon(英飞凌)
包装说明 PLASTIC, DO-5, 1 PIN PLASTIC, DO-5, 1 PIN
Reach Compliance Code compliant compliant
其他特性 HIGH SURGE CAPABILITY HIGH SURGE CAPABILITY
应用 GENERAL PURPOSE GENERAL PURPOSE
外壳连接 CATHODE ANODE
配置 SINGLE SINGLE
二极管元件材料 SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 DO-203AB DO-203AB
JESD-30 代码 O-MUPM-D1 O-MUPM-D1
最大非重复峰值正向电流 595 A 595 A
元件数量 1 1
相数 1 1
端子数量 1 1
最大输出电流 50 A 50 A
封装主体材料 METAL METAL
封装形状 ROUND ROUND
封装形式 POST/STUD MOUNT POST/STUD MOUNT
峰值回流温度(摄氏度) 260 NOT SPECIFIED
最大重复峰值反向电压 1600 V 1400 V
表面贴装 NO NO
端子形式 SOLDER LUG SOLDER LUG
端子位置 UPPER UPPER
处于峰值回流温度下的最长时间 40 NOT SPECIFIED
Base Number Matches 1 1
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