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50PF80WPBF

Rectifier Diode, 1 Phase, 1 Element, 50A, 800V V(RRM), Silicon, DO-203AB, PLASTIC, DO-5, 1 PIN

器件类别:分立半导体    二极管   

厂商名称:International Rectifier ( Infineon )

厂商官网:http://www.irf.com/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
International Rectifier ( Infineon )
零件包装代码
DO-5
包装说明
O-MUPM-W1
针数
1
Reach Compliance Code
compliant
ECCN代码
EAR99
应用
GENERAL PURPOSE
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-203AB
JESD-30 代码
O-MUPM-W1
最大非重复峰值正向电流
830 A
元件数量
1
相数
1
端子数量
1
最高工作温度
180 °C
最低工作温度
-55 °C
最大输出电流
50 A
封装主体材料
METAL
封装形状
ROUND
封装形式
POST/STUD MOUNT
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
最大重复峰值反向电压
800 V
表面贴装
NO
端子形式
WIRE
端子位置
UPPER
处于峰值回流温度下的最长时间
40
Base Number Matches
1
文档预览
Bulletin I20105 rev. B 06/02
50PF(R)...(W) SERIES
STANDARD RECOVERY DIODES
GEN II DO5
Features
High surge current capability
Designed for a wide range of applications
Stud cathode and stud anode version
Leaded version available/ wire version available
Low thermal resistance
UL approval pending
Stud Version
50 A
Typical Applications
Battery charges
Converters
Power supplies
Machine tool controls
Welding
50PF(R)...
Major Ratings and Characteristics
50PF (R)...(W)
Parameters
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
T
J
range
range
40 to 120
50
140
78
800
830
3200
2900
400 to 1200
- 55 to 180
Units
A
°C
A
A
case style DO-203AB (DO-5)
50PF(R)...W
A
2
s
V
°C
case style DO-203AB (DO-5)
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1
50PF (R)...(W) Series
Bulletin I20105 rev. B 06/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
RRM
, maximum
repetitive peak
reverse voltage
V
400
800
1200
V
RSM
, maximum non-
repetitive peak
reverse voltage
V
500
960
1440
I
RRM
max.
@ T
J
= 150°C
mA
9
40
50PF (R)...(W)
80
120
Forward Conduction
Parameter
I
F(AV)
Max. average forward current
@ Case temperature
Max. peak, one-cycle forward,
non-repetitive surge current
50PF(R)...(W)
40 to 120
50
140
78
800
830
670
700
Units Conditions
A
°C
A
t = 10ms
A
t = 8.3 ms
t = 10ms
t = 8.3 ms
t = 10ms
A
2
s
t = 8.3ms
t = 10ms
t = 8.3ms
A
2
√s
V
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= 150°C
180° conduction, half sine wave
I
F(RMS)
Max. RMS forward current
I
FSM
I
2
t
Maximum I
2
t for fusing
3200
2900
2260
2050
I
2
√t
V
F(TO)
r
f
V
FM
Maximum I
2
√t
for fusing
Low level value of threshold
voltage
Low level value of forward
slope resistance
Max. forward voltage drop
32000
0.77
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
I
pk
= 125A, T
J
= 25°C, t
p
= 400µs rectangular wave
4.30
1.40
mΩ
V
2
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50PF (R)...(W) Series
Bulletin I20105 rev. B 06/02
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
R
thCS
T
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to case
Max. thermal resistance, case
to heatsink
Max. allowed mounting torque ±10%
50PF (R)...(W)
40 to 120
-55 to 180
-55 to 180
0.51
0.25
2.3
÷
3.4
20
÷
30
3.2
÷
4.3
28
÷
38
Units
°C
Conditions
DC operation
K/W
Nm
lbf
·
in
Nm
lbf
·
in
g (oz)
See Outline Table
Tighting on Hexagon (2)
Mounting surface, smooth, flat and
greased
Tighting on nut (1)
wt
Approximate weight
Case style
15.8 (0.56)
DO-203AB (DO5)
(1) As general recommendation we suggest to tight on Hexagon and not on nut
(2) Torque must be appliable only to Hexagon and not to plastic structure
∆R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction
0.11
0.16
0.20
0.29
0.49
Rectangular conduction
0.10
0.16
0.22
0.31
0.50
Units
Conditions
T
J
= T
J
max.
K/W
Maximum Allowable Case Temperature (°C)
180
170
160
Maximum Allowable Case Temperature (°C)
50PF(R) Serie
RthJC = 0.51 K/W
180
170
160
150
30˚
50PF(R) Series
RthJC (DC) = 0.51 K/W
Conduction Angle
Conduction Period
150
140
180˚
130
120
110
0
10
20
30
30˚
60˚
120˚
90˚
140
130
120
0
10 20
60˚
90˚
120˚
180˚
DC
40
50
60
30
40 50
60 70
80
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
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3
50PF (R)...(W) Series
Bulletin I20105 rev. B 06/02
Maximum Allowable Forward Power Loss (W)
100
80
60
40
20
0
0
180˚
120˚
90˚
60˚
30˚
RMS Limit
1
K/W
0.7
1.5
K/
W
2K
/W
K/
W
3K
5K
/W
/W
Conduction Angle
7 K
/W
50PF(R) Series
Tj = 180˚C
10 K/
W
10
20
30
40
50
0
60
30
60
90
120
150
180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Maximum Allowable Forward Power Loss (W)
100
80
60
40
20
50PF(R) Series
Tj = 180˚C
180˚
120˚
90˚
60˚
30˚
RMS Limit
1
K/W
0.7
1.5
K/
W
K/
W
DC
2K
/W
3K
/W
5K
Conduction Period
/W
7K
/W
10 K/
W
0
0
20
40
60
0
80
30
60
90
120
150
180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
4
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50PF (R)...(W) Series
Bulletin I20105 rev. B 06/02
Peak Haf Sine Wave Forward Current (A)
800
700
600
500
400
300
200
1
Peak Haf Sine Wave Forward Current (A)
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 150˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
900
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
800
Initial Tj = 150˚C
700
No Voltage Reapplied
600
500
400
300
200
50PF(R) Series
Rated Vrrm Reapplied
50PF(R) Series
10
100
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non -Repetitive Surge Current
Fig. 6 - Maximum Non -Repetitive Surge Current
Transient Thermal Impedance Z
thJC
(K/W)
1000
Instantaneous Forward Current (A)
1
Steady State Value
RthJC = 0.51 K/W
(DC Operation)
100
0.1
10
Tj = 25˚C
Tj = 180˚C
50PF(R) Series
50PF(R) Series
1
0
1
2
3
4
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.01
0.0001 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
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