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515CDB144M975AAGR

VCXO; DIFF/SE; SINGLE FREQ; 0.1-

器件类别:无源元件   

厂商名称:Silicon Laboratories Inc

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器件参数
参数名称
属性值
类型
VCXO
频率
144.975MHz
功能
启用/禁用
输出
CMOS
电压 - 电源
3.3V
频率稳定度
±20ppm
绝对牵引范围(APR)
±30ppm
工作温度
-40°C ~ 85°C
电流 - 电源(最大值)
29mA
安装类型
表面贴装
封装/外壳
6-SMD,无引线
大小/尺寸
0.276" 长 x 0.197" 宽(7.00mm x 5.00mm)
高度 - 安装(最大值)
0.071"(1.80mm)
电流 - 电源(禁用)(最大值)
22mA
文档预览
Si515
V
O L TAG E
- C
ONTR OLLED
C
RYSTAL
O
S C I L L A T O R
(VCXO)
100 k H
Z T O
250 MH
Z
Features
Supports any frequency from
100 kHz to 250 MHz
Low-jitter operation
Short lead times: <2 weeks
AT-cut fundamental mode crystal
ensures high reliability/low aging
High power supply noise rejection
1% control voltage linearity
Available CMOS, LVPECL, LVDS,
and HCSL outputs
Optional integrated 1:2 CMOS
fanout buffer
3.3 and 2.5 V supply options
Industry-standard 5x7, 3.2x5, and
2.5x3.2 mm packages
Pb-free/RoHS-compliant
Selectable Kv (60, 90, 120,
150 ppm/V)
Si5602
5
X
7
MM
, 3.2
X
5
MM
2.5
X
3.2
MM
Ordering Information:
See page 14.
Applications
SONET/SDH/OTN
PON
Low Jitter PLLs
xDSL
Broadcast video
Telecom
Switches/routers
FPGA/ASIC clock generation
Pin Assignments:
See page 12.
Vc 1
OE
GND
2
3
6 V
DD
5 NC
4 CLK
Description
The Si515 VCXO utilizes Silicon Laboratories' advanced PLL technology to
provide any frequency from 100 kHz to 250 MHz. Unlike a traditional VCXO where
a different crystal is required for each output frequency, the Si515 uses one fixed
crystal and Silicon Labs’ proprietary synthesizer to generate any frequency across
this range. This IC-based approach allows the crystal resonator to provide
enhanced reliability, improved mechanical robustness, and excellent stability. In
addition, this solution provides superior control voltage linearity and supply noise
rejection, improving PLL stability and simplifying low jitter PLL design in noisy
environments. The Si515 is factory-configurable for a wide variety of user
specifications, including frequency, supply voltage, output format, tuning slope and
stability. Specific configurations are factory-programmed at time of shipment,
eliminating long lead times and non-recurring engineering charges associated with
custom frequency oscillators.
CMOS VCXO
Vc 1
OE 2
GND 3
6
V
DD
5 CLK–
4 CLK+
LVPECL/LVDS/HCSL/
Dual CMOS VCXO
Functional Block Diagram
V
DD
OE
Fixed
Frequency
Oscillator
Power Supply Filtering
Any-Frequency
0.1 to 250 MHz
Clock Synthesis
CLK+
CLK–
Vc
ADC
GND
Rev. 1.2 6/18
Copyright © 2018 by Silicon Laboratories
Si515
Si515
T
ABLE
Section
OF
C
ONTENTS
Page
1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2. Solder Reflow and Rework Requirements for 2.5x3.2 mm Packages . . . . . . . . . . . . . . 11
3. Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.1. Dual CMOS Buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4. Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5. Package Outline Diagram: 5 x 7 mm, 6-pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6. PCB Land Pattern: 5 x 7 mm, 6-pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
7. Package Outline Diagram: 3.2 x 5.0 mm, 6-pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
8. PCB Land Pattern: 3.2 x 5.0 mm, 6-pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
9. Package Outline Diagram: 2.5 x 3.2 mm, 6-pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
10. PCB Land Pattern: 2.5 x 3.2 mm, 6-pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
11. Top Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
11.1. Si515 Top Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
11.2. Top Marking Explanation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Document Change List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
2
Rev. 1.2
Si515
1. Electrical Specifications
Table 1. Recommended Operating Conditions
V
DD
= 2.5 or 3.3 V ±10%, T
A
= –40 to +85
o
C
Parameter
Supply Voltage
Symbol
V
DD
Test Condition
3.3 V option
2.5 V option
CMOS, 100 MHz,
single-ended
LVDS
(output enabled)
Min
2.97
2.25
0.80 x V
DD
–40
Typ
3.3
2.5
24
22
42
44
45
Max
3.63
2.75
29
26
46
47
22
0.20 x V
DD
85
Unit
V
V
mA
mA
mA
mA
mA
V
V
k
o
C
Supply Current
I
DD
LVPECL
(output enabled)
HCSL
(output enabled)
Tristate
(output disabled)
OE “1” Setting
OE “0” Setting
OE Internal Pull-Up/
Pull-Down Resistor
*
Operating Temperature
V
IH
V
IL
R
I
T
A
See Note
See Note
*Note:
Active high and active low polarity OE options available. Active high uses internal pull-up. Active low uses internal pull-
down. See ordering information on page 13.
Rev. 1.2
3
Si515
Table 2. Vc Control Voltage Input
V
DD
= 2.5 or 3.3 V ±10%, T
A
= –40 to +85
o
C
Parameter
Control Voltage Range
Control Voltage Tuning Slope
(10 to 90% V
DD
)
Kv Variation
Control Voltage Linearity
Modulation Bandwidth
Vc Input Impedance
Symbol
V
C
Kv
Kv_var
L
VC
BW
Z
VC
Test Condition
Min
0.1 x V
DD
Typ
V
DD
/2
Max
0.9 x V
DD
Unit
V
ppm/V
Positive slope,
ordering option
BSL
–5
60, 90, 120, 150
±1
10
100
±10
+5
%
%
kHz
k
Table 3. Output Clock Frequency Characteristics
V
DD
= 2.5 or 3.3 V ±10%, T
A
= –40 to +85
o
C
Parameter
Nominal Frequency
Symbol
F
O
F
O
S
T
A
APR
T
SU
T
D
T
E
Test Condition
CMOS, Dual CMOS
LVDS/LVPECL/HCSL
T
A
= –40 to +85
o
C
Frequency drift over 10 year life
Ordering option
Minimum V
DD
to output fre-
quency (F
O
) within specification
F
O
10
MHz
F
O
< 10 MHz
F
O
10 MHz
F
O
< 10 MHz
Min
0.1
0.1
–20
Typ
Max
212.5
250
+20
±8.5
Unit
MHz
MHz
ppm
ppm
ppm
ms
µs
µs
µs
µs
Temperature Stability
Aging
Minimum Absolute Pull Range
Startup Time
Disable Time
±30, ±50,±80, ±100
10
5
40
20
60
Enable Time
4
Rev. 1.2
Si515
Table 4. Output Clock Levels and Symmetry
V
DD
= 2.5 or 3.3 V ±10%, T
A
= –40 to +85
o
C
Parameter
CMOS Output Logic High
CMOS Output Logic Low
CMOS Output Logic High
Drive
CMOS Output Logic Low
Drive
CMOS Output Rise/Fall Time
(20 to 80% V
DD
)
Symbol
V
OH
V
OL
I
OH
I
OL
Test Condition
Min
0.85 x V
DD
Typ
0.8
0.6
Max
0.15 x V
DD
1.2
0.9
Unit
V
V
mA
mA
mA
mA
ns
ns
3.3 V
2.5 V
3.3 V
2.5 V
0.1 to 125 MHz,
C
L
= 15 pF
0.1 to 212.5 MHz,
C
L
= no load
–8
–6
8
6
T
R
/T
F
LVPECL/HCSL Output
Rise/Fall Time
(20 to 80% V
DD
)
LVDS Output Rise/Fall Time
(20 to 80% V
DD
)
LVPECL Output Common
Mode
LVPECL Output Swing
LVDS Output Common Mode
LVDS Output Swing
HCSL Output Common Mode
HCSL Output Swing
Duty Cycle
T
R
/T
F
T
R
/T
F
V
OC
V
O
V
OC
V
O
V
OC
V
O
DC
50
to V
DD
– 2 V,
single-ended
50
to V
DD
– 2 V,
single-ended
100
line-line,
V
DD
= 3.3/2.5 V
Single-ended 100

differential termination
50
to
ground
Single-ended
565
ps
0.55
1.13
0.25
0.35
0.58
48
V
DD
1.4 V
0.8
1.23
0.38
0.38
0.73
50
800
0.90
1.33
0.42
0.42
0.85
52
ps
V
V
PPSE
V
V
PPSE
V
V
PPSE
%
Rev. 1.2
5
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