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54FCT574ALB

LCC-20, Tube

器件类别:逻辑    逻辑   

厂商名称:IDT (Integrated Device Technology)

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器件参数
参数名称
属性值
Brand Name
Integrated Device Technology
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
IDT (Integrated Device Technology)
零件包装代码
LCC
包装说明
HQCCN, LCC20,.35SQ
针数
20
制造商包装代码
LC20
Reach Compliance Code
not_compliant
系列
FCT
JESD-30 代码
S-XQCC-N20
JESD-609代码
e0
长度
8.89 mm
负载电容(CL)
50 pF
逻辑集成电路类型
BUS DRIVER
最大I(ol)
0.032 A
湿度敏感等级
1
位数
8
功能数量
1
端口数量
2
端子数量
20
最高工作温度
125 °C
最低工作温度
-55 °C
输出特性
3-STATE
输出极性
TRUE
封装主体材料
UNSPECIFIED
封装代码
HQCCN
封装等效代码
LCC20,.35SQ
封装形状
SQUARE
封装形式
CHIP CARRIER, HEAT SINK/SLUG
峰值回流温度(摄氏度)
240
电源
5 V
Prop。Delay @ Nom-Sup
7.2 ns
传播延迟(tpd)
7.2 ns
认证状态
Not Qualified
筛选级别
MIL-STD-883 Class B
座面最大高度
2.54 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
MILITARY
端子面层
Tin/Lead (Sn/Pb)
端子形式
NO LEAD
端子节距
1.27 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
NOT SPECIFIED
触发器类型
POSITIVE EDGE
宽度
8.89 mm
文档预览
IDT54/74FCT574/A/C
FAST CMOS OCTAL D REGISTERS (3-STATE)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
FAST CMOS OCTAL
D REGISTERS (3-STATE)
IDT54/74FCT574/A/C
FEATURES:
IDT54FCT574A equivalent to FAST™ speed and drive
IDT54/74FCT574A up to 30% faster than FAST
IDT74FCT574C up to 50% faster than FAST
I
OL
= 48mA (commercial) and 32mA (military)
CMOS power levels (1mW typ. static)
Edge-triggered master/slave, D-type flip-flops
Buffered common clock and buffered common 3-state control
MIlitary product compliant to MIL-STD-883, Class B
Meets or exceeds JEDEC Standard 18 specifications
Available in the following packages:
– Commercial: SOIC
– Military: CERDIP, LCC
DESCRIPTION:
The FCT574 is an 8-bit register built using an advanced dual metal CMOS
technology. These registers consist of eight D-type flip-flops with a buffered
common clock and buffered 3-state output control. When the output enable
(OE) is low, the eight outputs are enabled. When the
OE
input is high, the
outputs are in the high-impedance state.
Input data meeting the set-up and hold time requirements of the D inputs
is transferred to the O outputs on the low-to-high transition of the clock input.
The FCT574 has non-inverting outputs with respect to the data at the D
inputs.
FUNCTIONAL BLOCK DIAGRAM
D
0
CP
CP
D
Q
CP
D
1
D
2
D
3
D
4
D
5
D
6
D
7
D
Q
CP
D
Q
CP
D
Q
CP
D
Q
CP
D
Q
CP
D
Q
CP
D
Q
OE
O
0
O
1
O
2
O
3
O
4
O
5
O
6
O
7
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
1
JUNE 2002
DSC-5428/2
© 2002 Integrated Device Technology, Inc.
IDT54/74FCT574/A/C
FAST CMOS OCTAL D REGISTERS (3-STATE)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATION
V
CC
20
D
1
D
0
D
1
D
2
D
3
D
4
D
5
D
6
D
7
GND
2
3
4
5
6
7
8
9
10
19
18
17
16
15
14
13
12
11
O
0
O
1
O
2
O
3
O
4
O
5
O
6
O
7
D
7
GND
CP
O
7
3
2
1
19
18
17
16
15
14
9
10
11
12
13
D
0
O
0
OE
INDEX
OE
1
20
V
CC
D
2
D
3
D
4
D
5
D
6
4
5
6
7
8
O
1
O
2
O
3
O
4
O
5
CP
CERDIP/ SOIC
TOP VIEW
LCC
TOP VIEW
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
(2)
V
TERM
(3)
T
A
T
BIAS
T
STG
P
T
I
OUT
Rating
Terminal Voltage
with Respect to GND
Terminal Voltage
with Respect to GND
Operating Temperature
Temperature under BIAS
Storage Temperature
Power Dissipation
DC Output Current
0 to +70
–55 to +125
–55 to +125
0.5
120
–55 to +125
–65 to +135
–65 to +150
0.5
120
°C
°C
°C
W
mA
–0.5 to V
CC
–0.5 to V
CC
V
Commercial
–0.5 to +7
Military
–0.5 to +7
Unit
V
PIN DESCRIPTION
Pin Names
Dx
CP
Ox
OE
Description
D flip-flop data inputs
Clock Pulse for the register. Enters data on LOW-to-
HIGH transition.
3-State Outputs (TRUE)
Active LOW 3-State Output Enable Input
FUNCTION TABLE
(1)
Function
High-Z
Load
Register
OE
H
H
L
L
H
H
Inputs
CP
L
H
Dx
X
X
L
H
L
H
Outputs
Ox
Z
Z
L
H
Z
Z
Internal
Ox
NC
NC
H
L
H
L
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability. No terminal voltage may exceed
Vcc by +0.5V unless otherwise noted.
2. Input and Vcc terminals only.
3. Output and I/O terminals only.
CAPACITANCE
(T
A
= +25°C, F = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ.
6
8
Max.
10
12
Unit
pF
pF
NOTE:
1. H = HIGH Voltage Level
X = Don’t Care
L = LOW Voltage Level
Z = High Impedance
NC = No Change
= LOW-to-HIGH transition
NOTE:
1. This parameter is measured at characterization but not tested.
2
O
6
IDT54/74FCT574/A/C
FAST CMOS OCTAL D REGISTERS (3-STATE)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: V
LC
= 0.2V; V
HC
= V
CC
- 0.2V
Commercial: T
A
= 0°C to +70°C, V
CC
= 5.0V ±5%, Military: T
A
= -55°C to +125°C, V
CC
= 5.0V ±10%
Symbol
V
IH
V
IL
I
IH
I
IL
I
OZH
I
OZL
V
IK
I
OS
V
OH
Off State (High Impedance)
Output Current
Clamp Diode Voltage
Short Circuit Current
Output HIGH Voltage
V
CC
= Max.
Parameter
Input HIGH Level
Input LOW Level
Input HIGH Current
V
CC
= Max.
Input LOW Current
Test Conditions
(1)
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
I
= V
CC
V
I
= 2.7V
V
I
= 0.5V
V
I
= GND
V
O
= V
CC
V
O
= 2.7V
V
O
= 0.5V
V
O
= GND
Min.
2
–60
V
HC
V
HC
2.4
2.4
Typ.
(2)
–0.7
–120
V
CC
V
CC
4.3
4.3
GND
GND
0.3
0.3
Max.
0.8
5
5
(4)
–5
(4)
–5
10
10
(4)
–10
(4)
–10
–1.2
V
LC
V
LC
(4)
0.5
0.5
µA
µA
Unit
V
V
V
CC
= Min., I
IN
= –18mA
V
CC
= Max., V
O
= GND
(3)
V
CC
= 3V, V
IN
= V
LC
or V
HC
, I
OH
= –32µA
V
CC
= Min
I
OH
= –300µA
V
IN
= V
IH
or V
IL
I
OH
= –12mA MIL
I
OH
= –15mA COM'L
V
CC
= 3V, V
IN
= V
LC
or V
HC
, I
OL
= 300µA
V
CC
= Min
I
OL
= 300µA
V
IN
= V
IH
or V
IL
I
OL
= 32mA MIL
I
OL
= 48mA COM'L
V
mA
V
V
OL
Output LOW Voltage
V
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient and maximum loading.
3. Not more than one output should be tested at one time. Duration of the test should not exceed one second.
4. This parameter is guaranteed but not ttested.
3
IDT54/74FCT574/A/C
FAST CMOS OCTAL D REGISTERS (3-STATE)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
V
LC
= 0.2V; V
HC
= V
CC
- 0.2V
Symbol
I
CC
∆I
CC
I
CCD
Parameter
Quiescent Power Supply Current
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply
Current
(4)
Test Conditions
(1)
V
CC
= Max.
V
IN
V
HC
; V
IN
V
LC
V
CC
= Max.
V
IN
= 3.4V
(3)
V
CC
= Max.
Outputs Open
OE
= GND
One Input Toggling
50% Duty Cycle
I
C
Total Power Supply Current
(6)
V
CC
= Max.
Outputs Open
f
CP
= 10MHz
50% Duty Cycle
OE
= GND
fi = 5MHz
One Bit Toggling
V
CC
= Max.
Outputs Open
f
CP
= 10MHz
50% Duty Cycle
OE
= GND
fi = 2.5MHz
Eight Bits Toggling
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Per TTL driven input (V
IN
= 3.4V). All other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of
∆I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
∆I
CC
D
H
N
T
+ I
CCD
(f
CP
/2 + fiNi)
I
CC
= Quiescent Current
∆I
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for register devices (zero for non-register devices)
fi = Input Frequency
Ni = Number of Inputs at fi
All currents are in milliamps and all frequencies are in megahertz.
Min.
Typ.
(2)
0.2
0.5
0.15
Max.
1.5
2
0.25
Unit
mA
mA
mA/
MHz
V
IN
V
HC
V
IN
V
LC
V
IN
V
HC
V
IN
V
LC
(FCT)
V
IN
= 3.4V
V
IN
= GND
1.7
4
mA
2.2
6
V
IN
V
HC
V
IN
V
LC
(FCT)
V
IN
= 3.4V
V
IN
= GND
4
7.8
(5)
6.2
16.8
(5)
4
IDT54/74FCT574/A/C
FAST CMOS OCTAL D REGISTERS (3-STATE)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
Symbol
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
t
SU
t
H
t
W
Parameter
Propagation Delay
CP to Qx
Output Enable Time
Output Disable Time
Set-up Time HIGH or LOW
Dx to CP
Hold Time HIGH or LOW
Dx to CP
CP Pulse Width HIGH or LOW
(3)
Condition
(1)
C
L
= 50pF
R
L
= 500Ω
54FCT574
Mil.
Min.
(2)
Max.
2
11
1.5
1.5
2
1.5
7
14
8
54/74FCT574A
Com'l.
Mil.
Min.
(2)
Max.
Min.
(2)
Max.
2
6.5
2
7.2
1.5
1.5
2
1.5
5
6.5
5.5
1.5
1.5
2
1.5
6
7.5
6.5
74FCT574C
Com'l.
Min.
(2)
Max.
2
5.2
1.5
1.5
2
1.5
5
5.5
5
Unit
ns
ns
ns
ns
ns
ns
NOTES:
1. See test circuit and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. This parameter is guaranteed but not tested.
5
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参数对比
与54FCT574ALB相近的元器件有:54FCT574LB、54FCT574DB、54FCT574ADB、74FCT574ASO、74FCT574SO、74FCT574CSO。描述及对比如下:
型号 54FCT574ALB 54FCT574LB 54FCT574DB 54FCT574ADB 74FCT574ASO 74FCT574SO 74FCT574CSO
描述 LCC-20, Tube LCC-20, Tube CDIP-20, Tube CDIP-20, Tube SOIC-20, Tube SOIC-20, Tube SOIC-20, Tube
Brand Name Integrated Device Technology Integrated Device Technology Integrated Device Technology Integrated Device Technology Integrated Device Technology Integrated Device Technology Integrated Device Technology
是否无铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
零件包装代码 LCC LCC CDIP CDIP SOIC SOIC SOIC
包装说明 HQCCN, LCC20,.35SQ LCC-20 DIP, DIP20,.3 DIP, DIP20,.3 SOP, SOP20,.4 SOP, SOP20,.4 SOP, SOP20,.4
针数 20 20 20 20 20 20 20
制造商包装代码 LC20 LC20 CD20 CD20 PS20 PS20 PS20
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant _compli _compli
系列 FCT FCT FCT FCT FCT FCT FCT
JESD-30 代码 S-XQCC-N20 S-XQCC-N20 R-CDIP-T20 R-CDIP-T20 R-PDSO-G20 R-PDSO-G20 R-PDSO-G20
JESD-609代码 e0 e0 e0 e0 e0 e0 e0
长度 8.89 mm 8.89 mm 25.4 mm 25.4 mm 12.8 mm 12.8 mm 12.8 mm
负载电容(CL) 50 pF 50 pF 50 pF 50 pF 50 pF 50 pF 50 pF
逻辑集成电路类型 BUS DRIVER BUS DRIVER BUS DRIVER BUS DRIVER BUS DRIVER BUS DRIVER BUS DRIVER
最大I(ol) 0.032 A 0.032 A 0.032 A 0.032 A 0.048 A 0.048 A 0.048 A
湿度敏感等级 1 1 1 1 1 1 1
位数 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1
端口数量 2 2 2 2 2 2 2
端子数量 20 20 20 20 20 20 20
最高工作温度 125 °C 125 °C 125 °C 125 °C 70 °C 70 °C 70 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C - - -
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
输出极性 TRUE TRUE TRUE TRUE TRUE TRUE TRUE
封装主体材料 UNSPECIFIED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 HQCCN HQCCN DIP DIP SOP SOP SOP
封装等效代码 LCC20,.35SQ LCC20,.35SQ DIP20,.3 DIP20,.3 SOP20,.4 SOP20,.4 SOP20,.4
封装形状 SQUARE SQUARE RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 CHIP CARRIER, HEAT SINK/SLUG CHIP CARRIER, HEAT SINK/SLUG IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 240 240 240 240 225 225 225
电源 5 V 5 V 5 V 5 V 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 2.54 mm 2.54 mm 5.08 mm 5.08 mm 2.641 mm 2.641 mm 2.641 mm
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.25 V 5.25 V 5.25 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.75 V 4.75 V 4.75 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES NO NO YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 MILITARY MILITARY MILITARY MILITARY COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15)
端子形式 NO LEAD NO LEAD THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING GULL WING
端子节距 1.27 mm 1.27 mm 2.54 mm 2.54 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 QUAD QUAD DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
触发器类型 POSITIVE EDGE POSITIVE EDGE POSITIVE EDGE POSITIVE EDGE POSITIVE EDGE POSITIVE EDGE POSITIVE EDGE
宽度 8.89 mm 8.89 mm 7.62 mm 7.62 mm 7.5057 mm 7.5057 mm 7.5057 mm
Prop。Delay @ Nom-Sup 7.2 ns 11 ns 11 ns 7.2 ns 6.5 ns - -
传播延迟(tpd) 7.2 ns 11 ns 11 ns 7.2 ns 6.5 ns - 5.2 ns
筛选级别 MIL-STD-883 Class B MIL-STD-883 Class B MIL-STD-883 Class B MIL-STD-883 Class B - - -
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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