IC DUAL OP-AMP, 3000 uV OFFSET-MAX, 10 MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8, Operational Amplifier
厂商名称:NXP(恩智浦)
厂商官网:https://www.nxp.com
下载文档型号 | 5532A/BPA | 5532/BPA |
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描述 | IC DUAL OP-AMP, 3000 uV OFFSET-MAX, 10 MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8, Operational Amplifier | IC DUAL OP-AMP, 3000 uV OFFSET-MAX, 10 MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8, Operational Amplifier |
厂商名称 | NXP(恩智浦) | NXP(恩智浦) |
零件包装代码 | DIP | DIP |
包装说明 | DIP, | DIP, |
针数 | 8 | 8 |
Reach Compliance Code | unknown | unknown |
ECCN代码 | EAR99 | EAR99 |
Is Samacsys | N | N |
放大器类型 | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER |
最大平均偏置电流 (IIB) | 0.7 µA | 0.7 µA |
标称共模抑制比 | 100 dB | 100 dB |
最大输入失调电压 | 3000 µV | 3000 µV |
JESD-30 代码 | R-GDIP-T8 | R-GDIP-T8 |
标称负供电电压 (Vsup) | -15 V | -15 V |
功能数量 | 2 | 2 |
端子数量 | 8 | 8 |
最高工作温度 | 125 °C | 125 °C |
最低工作温度 | -55 °C | -55 °C |
封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
封装代码 | DIP | DIP |
封装形状 | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | IN-LINE |
认证状态 | Not Qualified | Not Qualified |
座面最大高度 | 5.08 mm | 5.08 mm |
标称压摆率 | 9 V/us | 9 V/us |
最大压摆率 | 13 mA | 13 mA |
标称供电电压 (Vsup) | 15 V | 15 V |
表面贴装 | NO | NO |
技术 | BIPOLAR | BIPOLAR |
温度等级 | MILITARY | MILITARY |
端子形式 | THROUGH-HOLE | THROUGH-HOLE |
端子节距 | 2.54 mm | 2.54 mm |
端子位置 | DUAL | DUAL |
标称均一增益带宽 | 10000 kHz | 10000 kHz |
宽度 | 7.62 mm | 7.62 mm |
Base Number Matches | 1 | 1 |