CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 100Ω, R
LOAD
= 500kΩ, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1
2, 3
Input Bias Current
+I
B
V
CM
= 0V,
+R
S
= 10kΩ,
-R
S
= 100Ω
V
CM
= 0V,
+R
S
= 100Ω,
-R
S
= 10kΩ
V
CM
= 0V,
+R
S
= 10kΩ,
-R
S
= 10kΩ
V+ = +3V, V- = -27V
1
2, 3
1
2, 3
1
2, 3
1
2, 3
-CMR
V+ = +27V, V- = -3V
1
2, 3
Large Signal Voltage
Gain
+A
VOL
V
OUT
= 0V and +10V,
R
L
= 2kΩ
V
OUT
= 0V and -10V,
R
L
= 2kΩ
∆V
CM
= +5V,
V+ = +10V, V- = -20V,
V
OUT
= -5V
∆V
CM
= -5V,
V+ = +20V, V- = -10V,
V
OUT
= +5V
4
5, 6
4
5, 6
1
2, 3
1
2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-2.5
-3.0
-200
-325
-200
-325
-75
-125
+12
+12
-
-
100
100
100
100
86
86
86
86
MAX
2.5
3.0
200
325
200
325
75
125
-
-
-12
-12
-
-
-
-
-
-
-
-
UNITS
mV
mV
nA
nA
nA
nA
nA
nA
V
V
V
V
kV/V
kV/V
kV/V
kV/V
dB
dB
dB
dB
PARAMETERS
Input Offset Voltage
SYMBOL
V
IO
CONDITIONS
V
CM
= 0V
-I
B
Input Offset Current
I
IO
Common Mode Range
+CMR
-A
VOL
Common Mode
Rejection Ratio
+CMRR
-CMRR
Spec Number
2
511014-883
HA5104/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 100Ω, R
LOAD
= 500kΩ, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1
2, 3
-V
OUT1
R
L
= 2kΩ
1
2, 3
+V
OUT2
R
L
= 10kΩ
1
2, 3
-V
OUT2
R
L
= 10kΩ
1
2, 3
Output Current
+I
OUT
V
OUT
= -5V
1
2, 3
-I
OUT
V
OUT
= +5V
1
2, 3
Quiescent Power Supply
Current
+I
CC
V
OUT
= 0V, I
OUT
= 0mA
1
2, 3
-I
CC
V
OUT
= 0V, I
OUT
= 0mA
1
2, 3
Power Supply
Rejection Ratio
+PSRR
∆V
SUP
= 10V,
V+ = +10V, V- = -15V
V+ = +20V, V- = -15V
∆V
SUP
= 10V,
V+ = +15V, V- = -10V
V+ = +15V, V- = -20V
1
2, 3
1
2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
10
10
-
-
12
12
-
-
10
10
-
-
-
-
-6.5
-7.5
86
86
86
86
MAX
-
-
-10
-10
-
-
-12
-12
-
-
-10
-10
6.5
7.5
-
-
-
-
-
-
UNITS
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mA
mA
mA
mA
dB
dB
dB
dB
PARAMETERS
Output Voltage Swing
SYMBOL
+V
OUT1
CONDITIONS
R
L
= 2kΩ
-PSRR
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 50Ω, R
LOAD
= 2kΩ, C
LOAD
= 50pF, A
VCL
= +1V/V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
4
4
4
4
4
4
LIMITS
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
1
1
-
-
-
-
MAX
-
-
200
200
35
35
UNITS
V/µs
V/µs
ns
ns
%
%
PARAMETERS
Slew Rate
SYMBOL
+SR
-SR
CONDITIONS
V
OUT
= -3V to +3V
V
OUT
= +3V to -3V
V
OUT
= 0 to +200mV
10%
≤
T
R
≤
90%
V
OUT
= 0 to -200mV
10%
≤
T
F
≤
90%
V
OUT
= 0 to +200mV
V
OUT
= 0 to -200mV
Rise and Fall Time
T
R
T
F
Overshoot
+OS
-OS
Spec Number
3
511014-883
HA5104/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
SUPPLY
=
±15V,
R
LOAD
= 2kΩ, C
LOAD
= 50pF, A
VCL
= 1V/V, Unless Otherwise Specified.
LIMITS
PARAMETERS
Differential Input
Resistance
Input Noise Voltage
Density
Input Noise Current
Density
Full Power
Bandwidth
Minimum Closed Loop
Stable Gain
Output Resistance
Quiescent Power
Consumption
Channel Separation
SYMBOL
R
IN
E
N
I
N
FPBW
CLSG
R
OUT
PC
CS
CONDITIONS
V
CM
= 0V
R
S
= 20Ω,
f
O
= 1000Hz
R
S
= 2MΩ,
f
O
= 1000Hz
V
PEAK
= 10V
R
L
= 2kΩ, C
L
= 50pF
Open Loop
V
OUT
= 0V, I
OUT
=
0mA
R
S
= 1kΩ,
A
VCL
= 100V/V,
V
IN
= 100mV
PEAK
at
10kHz Referred to
Input
NOTES
1
1
1
1, 2
1
1
1, 3
1
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
-55
o
C to +125
o
C
+25
o
C
-55
o
C to +125
o
C
+25
o
C
MIN
250
-
-
32
+1
-
-
55
MAX
-
6
3
-
-
270
225
-
UNITS
kΩ
nV/√Hz
pA/√Hz
kHz
V/V
Ω
mW
dB
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These pa-
rameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characteriza-
tion based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV
PEAK
).
3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.).
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
Groups C and D Endpoints
NOTE:
1. PDA applies to Subgroup 1 only.
SUBGROUPS (SEE TABLES 1 AND 2)
1
1 (Note 1), 2, 3, 4, 5, 6
1, 2, 3, 4, 5, 6
1
Spec Number
4
511014-883
HA5104/883
Die Characteristics
DIE DIMENSIONS:
95 x 99 x 19 mils
±
1 mils
2420 x 2530 x 483µm
±
25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
Å
±
2k
Å
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12k
Å
±
2k
Å
Nitride Thickness: 3.5k
Å
±
1.5k
Å
WORST CASE CURRENT DENSITY:
1.43 x 10
5
A/cm
2
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
TRANSISTOR COUNT:
175
PROCESS:
Bipolar Dielectric Isolation
Metallization Mask Layout
HA5104/883
+IN2
V+
+IN1
-IN2
-IN1
OUT2
OUT3
OUT1
OUT4
-IN3
-IN4
+IN3
V-
+IN4
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notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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